公开(公告)号：US11271037B2

公开(公告)日：2022-03-08

申请号：US16803574

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Park ,  Younghyun Kim ,  Se Chung Oh ,  Jungmin Lee ,  Kyungil Hong

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

Abstract: Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.

公开(公告)号：US11170832B2

公开(公告)日：2021-11-09

申请号：US16552110

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Woong Kim ,  Juhyun Kim ,  Se Chung Oh ,  Ung Hwan Pi

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.

公开(公告)号：US20190115527A1

公开(公告)日：2019-04-18

申请号：US16107242

申请日：2018-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Heon Park ,  Yong Sung Park ,  Joonmyoung Lee ,  Hyun Cho ,  Se Chung Oh

IPC: H01L43/12 ,  G11C11/16 ,  G11C11/15 ,  H01L43/02

Abstract: Provided are process control methods and process control systems. The method includes performing a deposition process on a lot defined by a group of a plurality of wafers, performing a measurement process on the lot to obtain a measured value with respect to at least one wafer among the plurality of wafers, producing a target value of a factor of a process condition in the deposition process by using a difference between the measured value and a reference value, and providing an input value of the factor with respect to a subsequent lot based on the target value. The operation of providing the input value of the factor includes obtaining a previous target value of the factor previously produced with respect to at least one previous lot, and providing a weighted average of the previous target value and the target value as the input value.