公开(公告)号：US08832285B2

公开(公告)日：2014-09-09

申请号：US13739438

申请日：2013-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-ho Cho ,  Se-hee Han ,  Je-young Maeng

IPC: G06F15/16 ,  H04W76/02 ,  G06F9/44

CPC classification number: H04L41/28 ,  G06F9/452 ,  H04L12/2809 ,  H04L12/2818 ,  H04L29/125 ,  H04L29/12509 ,  H04L61/2564 ,  H04L61/2567 ,  H04L61/2578 ,  H04L65/1006 ,  H04L67/02 ,  H04L67/025 ,  H04L67/30 ,  H04W76/10 ,  H04W76/12

Abstract: A remote access service is provided by receiving remote access transport agent (RATA) capability information of a home remote access server (RAS) and a remote RAS from the home RAS and the remote RAS, respectively, generating a RATA profile based on the RATA capability information, supported by the home RAS and the remote RAS, and transmitting the generated RATA profile to the home RAS and the remote RAS, respectively.

公开(公告)号：US09674049B2

公开(公告)日：2017-06-06

申请号：US14474896

申请日：2014-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-ho Cho ,  Se-hee Han ,  Je-young Maeng

IPC: G06F15/16 ,  H04L12/24 ,  H04L29/12 ,  H04L29/08 ,  H04L29/06 ,  H04W76/02 ,  H04L12/28 ,  G06F9/44

CPC classification number: H04L41/28 ,  G06F9/452 ,  H04L12/2809 ,  H04L12/2818 ,  H04L29/125 ,  H04L29/12509 ,  H04L61/2564 ,  H04L61/2567 ,  H04L61/2578 ,  H04L65/1006 ,  H04L67/02 ,  H04L67/025 ,  H04L67/30 ,  H04W76/10 ,  H04W76/12

Abstract: A remote access service is provided by receiving remote access transport agent (RATA) capability information of a home remote access server (RAS) and a remote RAS from the home RAS and the remote RAS, respectively, generating a RATA profile based on the RATA capability information, supported by the home RAS and the remote RAS, and transmitting the generated RATA profile to the home RAS and the remote RAS, respectively.

公开(公告)号：US09660873B2

公开(公告)日：2017-05-23

申请号：US14449933

申请日：2014-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-ho Cho ,  Se-hee Han ,  Je-young Maeng

IPC: G06F15/16 ,  H04L12/24 ,  H04L29/12 ,  H04L29/08 ,  H04L29/06 ,  H04W76/02 ,  H04L12/28 ,  G06F9/44

CPC classification number: H04L41/28 ,  G06F9/452 ,  H04L12/2809 ,  H04L12/2818 ,  H04L29/125 ,  H04L29/12509 ,  H04L61/2564 ,  H04L61/2567 ,  H04L61/2578 ,  H04L65/1006 ,  H04L67/02 ,  H04L67/025 ,  H04L67/30 ,  H04W76/10 ,  H04W76/12

Abstract: A remote access service is provided by receiving remote access transport agent (RATA) capability information of a home remote access server (RAS) and a remote RAS from the home RAS and the remote RAS, respectively, generating a RATA profile based on the RATA capability information, supported by the home RAS and the remote RAS, and transmitting the generated RATA profile to the home RAS and the remote RAS, respectively.

公开(公告)号：US09570359B2

公开(公告)日：2017-02-14

申请号：US14510354

申请日：2014-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-seung Yang ,  Mohammad Rakib Uddin ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Seong-ho Cho

IPC: H01L21/20 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/02

CPC classification number: H01L21/823807 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02645 ,  H01L27/092

Abstract: A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.

Abstract translation: 公开了一种衬底结构，包括衬底结构的互补金属氧化物半导体（CMOS）器件以及制造CMOS器件的方法，其中衬底结构包括：衬底，由材料形成的至少一个种子层 包括硼（B）和/或磷（P），以及种子层上的缓冲层。 该衬底结构使得可以减小缓冲层的厚度并且还改善由衬底结构形成的半导体器件的性能特性。

公开(公告)号：US08951882B2

公开(公告)日：2015-02-10

申请号：US13868497

申请日：2013-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-ho Cho

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/762 ,  G02B6/13 ,  G02B6/136 ,  H01L21/76229

Abstract: A method of fabricating an optoelectronic integrated circuit substrate includes defining a photonic device region on a first substrate, the photonic device region having a photonic device formed thereon, forming a trench in the photonic device region on a top surface of the first substrate, the trench having a first depth, filling the trench with a dielectric, bonding a second substrate on the first substrate to cover the trench, and thinning the second substrate to a first thickness.

Abstract translation: 制造光电子集成电路衬底的方法包括在第一衬底上限定光子器件区域，所述光子器件区域具有形成在其上的光子器件，在第一衬底的顶表面上的光子器件区域中形成沟槽，沟槽 具有第一深度，用电介质填充所述沟槽，将所述第一衬底上的第二衬底接合以覆盖所述沟槽，以及将所述第二衬底减薄到第一厚度。