公开(公告)号：US20230411393A1

公开(公告)日：2023-12-21

申请号：US18140789

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moosong LEE ,  Jinsun KIM ,  Inho KWAK ,  Dohyeon PARK ,  Yeeun HAN ,  Sang-Ho YUN ,  Seungyoon LEE ,  Nanhyung KIM

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/02

CPC classification number: H01L27/0924 ,  H01L29/66545 ,  H01L27/0207 ,  H01L21/823437 ,  H01L21/823475 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate having a key region, a dummy active pattern on the key region, the dummy active pattern including a first impurity region and a second impurity region, a line structure provided on the first impurity region and extended in a first direction, a dummy gate electrode provided between the first and second impurity regions and extended in a second direction crossing the first direction, and a dummy contact disposed adjacent to a side of the line structure and connected to the second impurity region. The dummy contact includes a plurality of long contacts arranged in the second direction.

公开(公告)号：US20220179302A1

公开(公告)日：2022-06-09

申请号：US17392788

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjay KANG ,  Chorong PARK ,  Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE

IPC: G03F1/36 ,  G03F1/22

Abstract: Disclosed are an overlay correction method, a method of evaluating an overlay correction operation, and a method of fabricating a semiconductor device using the overlay correction method. The overlay correction method may include measuring an overlay between center lines of lower and upper patterns on a wafer, fitting each of components of the overlay with a polynomial function to obtain first fitting quantities, and summing the first fitting quantities to construct a correction model. The components of the overlay may include overlay components, which are respectively measured in two different directions parallel to a top surface of a reticle. The highest order of the polynomial function may be determined as an order, which minimizes a difference between the polynomial function and each of the components of the overlay or corresponds to an inflection point in a graph of the difference with respect to the highest order of the polynomial function.

公开(公告)号：US20210333701A1

公开(公告)日：2021-10-28

申请号：US16952844

申请日：2020-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US20210116803A1

公开(公告)日：2021-04-22

申请号：US16886237

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong JUNG ,  Jinsun KIM ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/70 ,  G03F1/36 ,  H01L21/66 ,  H01L21/027 ,  G03F7/20

Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.