-
公开(公告)号：US20190312119A1
公开(公告)日：2019-10-10
申请号：US16432298
申请日：2019-06-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC: H01L29/423 , H01L29/51 , H01L29/49 , H01L21/28
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
-
公开(公告)号：US20230246177A1
公开(公告)日：2023-08-03
申请号：US18297507
申请日：2023-04-07
Applicant: Samsung Electronics Co., Ltd. , CORNING INCORPORATED
Inventor： Myungjin Lee , Jusik Kim , Ryounghee Kim , Sewon Kim , Michael Edward BADDING , Wonseok Chang , Jaemyung Chang , Zhen SONG , Sung Heo
IPC: H01M4/36 , H01M10/0562 , H01M10/058 , H01M4/485 , H01M4/587 , H01M4/131 , H01M4/133
CPC classification number: H01M4/366 , H01M10/0562 , H01M10/058 , H01M4/485 , H01M4/587 , H01M4/131 , H01M4/133 , H01M2004/027
Abstract: An all-solid secondary battery including: a positive electrode layer including a positive active material; a negative electrode layer including a negative electrode current collector and a first negative active material layer; and a solid electrolyte layer between the positive electrode layer and the negative electrode layer, the solid electrolyte including a solid electrolyte, wherein the first negative active material layer is adjacent to the solid electrolyte layer, the first negative active material layer includes a multi-component metal composite including M1, M2, M3, and X, an atomic ratio of M2M3X to M1M2M3X in the multi-component metal composite is in a range of about 0.5 to about 0.85, and an atomic ratio of M2M3X to M1 ion is in a range of about 1 to about 5.51.
-
公开(公告)号：US10325992B2
公开(公告)日：2019-06-18
申请号：US14854272
申请日：2015-09-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC: H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
-
公开(公告)号：US20170207275A1
公开(公告)日：2017-07-20
申请号：US15409656
申请日：2017-01-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Heo , Kyu Sik Kim , Nam Jeong Kim , Seong Heon KIM , Yongsung Kim , Eunae Cho , Takkyun Ro , Dongjin Yun , Yongsu Kim , Wenxu Xianyu , Yong-Young Park , Kyung Bae Park
CPC classification number: H01L27/307 , H01L27/14621 , H01L27/14643 , H01L27/14665 , H01L27/301 , H01L51/42 , H01L51/441 , H01L51/448 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L51/5203 , H01L51/56 , H01L2251/301 , H01L2251/552 , Y02E10/549
Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0
-
-
-
Search Results
14
records
(took 0.013 seconds)
