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公开(公告)号：US20230246177A1
公开(公告)日：2023-08-03
申请号：US18297507
申请日：2023-04-07
发明人： Myungjin Lee , Jusik Kim , Ryounghee Kim , Sewon Kim , Michael Edward BADDING , Wonseok Chang , Jaemyung Chang , Zhen SONG , Sung Heo
IPC分类号： H01M4/36 , H01M10/0562 , H01M10/058 , H01M4/485 , H01M4/587 , H01M4/131 , H01M4/133
CPC分类号： H01M4/366 , H01M10/0562 , H01M10/058 , H01M4/485 , H01M4/587 , H01M4/131 , H01M4/133 , H01M2004/027
摘要： An all-solid secondary battery including: a positive electrode layer including a positive active material; a negative electrode layer including a negative electrode current collector and a first negative active material layer; and a solid electrolyte layer between the positive electrode layer and the negative electrode layer, the solid electrolyte including a solid electrolyte, wherein the first negative active material layer is adjacent to the solid electrolyte layer, the first negative active material layer includes a multi-component metal composite including M1, M2, M3, and X, an atomic ratio of M2M3X to M1M2M3X in the multi-component metal composite is in a range of about 0.5 to about 0.85, and an atomic ratio of M2M3X to M1 ion is in a range of about 1 to about 5.51.
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公开(公告)号：US20220416235A1
公开(公告)日：2022-12-29
申请号：US17847328
申请日：2022-06-23
发明人： Jusik Kim , Myungjin Lee , Wonseok Chang , Sung Heo , Ryounghee Kim , Sewon Kim , Gabin Yoon
IPC分类号： H01M4/48 , H01M4/36 , H01M10/0525 , H01M4/40 , H01M4/587 , H01M10/0562 , H01M10/058
摘要： An all-solid secondary battery includes: a cathode layer including a cathode active material; an anode layer including an anode current collector, a first anode active material layer, and a second anode active material layer between the anode current collector and the first anode active material layer; and a solid electrolyte layer between the cathode layer and the anode layer and including a solid electrolyte, wherein the first anode active material layer is adjacent to the solid electrolyte layer, has pores, and contains a metal or metal alloy capable of forming an alloy or a compound with lithium, and the second anode active material layer includes a second anode active material including a carbon anode active material and optionally a metal or metalloid anode active material.
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公开(公告)号：US10964753B2
公开(公告)日：2021-03-30
申请号：US16398947
申请日：2019-04-30
发明人： Sung Heo , Takkyun Ro , Kyung Bae Park , Gyeongsu Park , Joo Ho Lee
摘要： Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0
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公开(公告)号：US10181497B2
公开(公告)日：2019-01-15
申请号：US15409656
申请日：2017-01-19
发明人： Sung Heo , Kyu Sik Kim , Nam Jeong Kim , Seong Heon Kim , Yongsung Kim , Eunae Cho , Takkyun Ro , Dongjin Yun , Yongsu Kim , Wenxu Xianyu , Yong-Young Park , Kyung Bae Park
摘要： An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0
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公开(公告)号：US11735637B2
公开(公告)日：2023-08-22
申请号：US17400901
申请日：2021-08-12
发明人： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC分类号： H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
CPC分类号： H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US11127828B2
公开(公告)日：2021-09-21
申请号：US16432298
申请日：2019-06-05
发明人： Eunae Cho , Dongjin Lee , Ji Eun Lee , Kyoung-Ho Jung , Dong Su Ko , Yongsu Kim , Jiho Yoo , Sung Heo , Hyun Park , Satoru Yamada , Moonyoung Jeong , Sungjin Kim , Gyeongsu Park , Han Jin Lim
IPC分类号： H01L29/423 , H01L29/49 , H01L21/28 , H01L29/51
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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7.发明授权Optoelectronic device, and image sensor and electronic device including the same 有权光电器件，图像传感器和电子器件等公开(公告)号：US09590121B2
公开(公告)日：2017-03-07
申请号：US14744938
申请日：2015-06-19
发明人： Seong Heon Kim , Dongjin Yun , Sung Heo , Kyu Sik Kim , Satoh Ryuichi , Gyeongsu Park , Hyung-Ik Lee
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/18 , H01L51/42 , H01L51/00
CPC分类号： H01L31/022408 , H01L31/18 , H01L51/0046 , H01L51/0077 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1
摘要翻译： 光电子器件包括彼此面对的第一电极和第二电极，第一电极和第二电极之间的光电转换层，以及光电转换层和第一电极中的至少一个之间的缓冲层，以及光电转换 所述缓冲层包括MoOx1（2.58≤x1<3.0），ZnOx2（1.0≤x2<2.0），TiOx3（1.5≤x3<2.0），VOx4（1.5≤x4<2.0），TaOx5（ 1.0≤x5<2.5），WOx6（2.0
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公开(公告)号：US11955578B2
公开(公告)日：2024-04-09
申请号：US17037859
申请日：2020-09-30
发明人： Jong Won Chung , Sukho Choi , Sung Heo , Sung Kim , YongChul Kim
CPC分类号： H01L33/005 , H01L33/26
摘要： Provided are an optoelectronic apparatus including an on-chip optoelectronic diode capable of receiving and emitting light, and a method of manufacturing the same.
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公开(公告)号：US11881586B2
公开(公告)日：2024-01-23
申请号：US17537839
申请日：2021-11-30
发明人： Sung Heo , Kihong Kim , Jusik Kim , Ryounghee Kim , Wooyoung Yang , Myungjin Lee
IPC分类号： H01M4/62 , H01M10/0525 , H01M4/04 , H01M4/02 , H01M10/0562
CPC分类号： H01M4/628 , H01M4/0426 , H01M10/0525 , H01M10/0562 , H01M2004/027 , H01M2300/008 , H01M2300/0071
摘要： A protected anode, an electrochemical device including the same, and a method of preparing the electrochemical device. The protected anode may include: an anode layer; and a protective layer including an oxide represented by Formula 1, on the anode layer:
AxMyO1−x−y Formula 1
In Formula 1, A is at least one of Ge, Sb, Bi, Se, Sn, or Pb; M is at least one of In, TI, Sb, Bi, S, Se, Te, or Po; A and M are different from each other; and 0-
公开(公告)号：US20230011360A1
公开(公告)日：2023-01-12
申请号：US17537839
申请日：2021-11-30
发明人： Sung Heo , Kihong Kim , Jusik Kim , Ryounghee Kim , Wooyoung Yang , Myungjin Lee
IPC分类号： H01M4/62 , H01M10/0525 , H01M4/04
摘要： A protected anode, an electrochemical device including the same, and a method of preparing the electrochemical device. The protected anode may include: an anode layer; and a protective layer including an oxide represented by Formula 1, on the anode layer: In Formula 1, A is at least one of Ge, Sb, Bi, Se, Sn, or Pb; M is at least one of In, Tl, Sb, Bi, S, Se, Te, or Po; A and M are different from each other; and 0
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