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29 条记录 (耗时 0.021 秒)

    Receiver and reception method for estimating channel in an orthogonal frequency division multiple access system
    13.
    发明授权
    Receiver and reception method for estimating channel in an orthogonal frequency division multiple access system 有权
    用于在正交频分多址系统中估计信道的接收和接收方法

    公开(公告)号：US09124453B2

    公开(公告)日：2015-09-01

    申请号：US14171248

    申请日：2014-02-03

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sung-Soo Kim

    IPC分类号： H04L25/02 ,  H04L5/00 ,  H04L27/26

    CPC分类号： H04L25/0208 ,  H04L5/0007 ,  H04L25/0204 ,  H04L25/0212 ,  H04L27/2607 ,  H04L27/2665

    摘要： A receiver and reception method for estimating a channel in an Orthogonal Frequency Division Multiple Access (OFDMA) system is provided. The receiver includes a delay estimator for estimating, from a signal received from a transmitter through multipaths, at least one of an average time delay of the multipaths and a time delay of one of the multipaths having a maximum power among the multipaths, a rotator for circular-rotating the received signal using the estimated delay, and a channel estimator for estimating a channel impulse response of the circular-rotated signal.

    摘要翻译： 提供了一种用于估计正交频分多址（OFDMA）系统中的信道的接收和接收方法。 接收机包括延迟估计器，用于根据从发射机通过多路径接收的信号估计多路径的平均时间延迟中的至少一个以及多路径中具有最大功率的多路径之一的时间延迟，用于 使用估计延迟对接收信号进行循环旋转，以及用于估计循环旋转信号的信道脉冲响应的信道估计器。

    Semiconductor device
    15.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10186615B2

    公开(公告)日：2019-01-22

    申请号：US15889803

    申请日：2018-02-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sung-Soo Kim ,  Gi-Gwan Park ,  Song-E Kim ,  Koung-Min Ryu ,  Sun-Ki Min

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/417

    摘要： A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

    Display device and method thereof
    17.
    发明授权
    Display device and method thereof 有权

    公开(公告)号：US09613563B2

    公开(公告)日：2017-04-04

    申请号：US14511500

    申请日：2014-10-10

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hwa-seok Seong ,  Sung-Soo Kim

    IPC分类号： G09G3/3208 ,  G09G3/22

    CPC分类号： G09G3/3208 ,  G09G3/22 ,  G09G2320/0271 ,  G09G2320/046 ,  G09G2320/0686 ,  G09G2360/16

    摘要： A display apparatus includes: a display panel configured to display an image frame; an arithmetic operator configured to divide the image frame into blocks, calculate a pixel gradation value of the pixel blocks, and accumulate the calculated pixel gradation values; and a compensator configured to locally reduce a luminance of a corresponding pixel block, of which a respective accumulated pixel gradation value exceeds a threshold value of among the plurality of pixel blocks, and to compensate for a luminance difference between the corresponding pixel block, for which the luminance has been reduced, and surrounding pixel blocks. Accordingly, it is possible to effectively remove an afterimage.

    Semiconductor devices
    18.
    发明授权
    Semiconductor devices 有权

    公开(公告)号：US10790282B2

    公开(公告)日：2020-09-29

    申请号：US16229207

    申请日：2018-12-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Soo-Jung Choi ,  Dong-Hyun Roh ,  Sung-Soo Kim ,  Gyu-Hwan Ahn ,  Sang-Jin Hyun

    IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L21/308

    摘要： A semiconductor device may include active fins spaced apart from each other by a recess therebetween, each of the active fins protruding from an upper surface of a substrate, an isolation structure including a liner on a lower surface and a sidewall of a lower portion of the recess and a blocking pattern on the liner, the blocking pattern filling a remaining portion of the lower portion of the recess and including a nitride, a carbide or polysilicon, a gate electrode structure on the active fins and the isolation structure, and a source/drain layer on a portion of each of the active fins adjacent to the gate electrode structure.