AIR CONDITIONING DEVICE AND CONTROL METHOD THEREOF

    公开(公告)号:US20200206675A1

    公开(公告)日:2020-07-02

    申请号:US16728831

    申请日:2019-12-27

    Abstract: An air purification device includes a driving part for changing a location thereof, a fan, a carbon dioxide absorption filter for absorbing carbon dioxide in the air, a filter reproduction part for removing carbon dioxide absorbed into the carbon dioxide absorption filter, and a processor configured to control the driving part such that the air conditioning device moves to an area that can support ventilation, and drive the filter reproduction part for removing carbon dioxide absorbed into the carbon dioxide absorption filter in the area that can support ventilation.

    VARIABLE RESISTANCE MEMORY DEVICE INCLUDING SYMMETRICAL MEMORY CELL ARRANGEMENTS AND METHOD OF FORMING THE SAME

    公开(公告)号:US20200027925A1

    公开(公告)日:2020-01-23

    申请号:US16354545

    申请日:2019-03-15

    Abstract: A variable resistance non-volatile memory device can include a semiconductor substrate and a plurality of first conductive lines each extending in a first direction perpendicular to the semiconductor substrate and spaced apart in a second direction on the semiconductor substrate. A second conductive line can extend in the second direction parallel to the semiconductor substrate on a first side of the plurality of first conductive lines and a third conductive line can extend in the second direction parallel to the semiconductor substrate on a second side of the plurality of first conductive lines opposite the first side of the plurality of first conductive lines. A plurality of first non-volatile memory cells can be on the first side of the plurality of first conductive lines and each can be coupled to the second conductive line and to a respective one of the plurality of first conductive lines, where each of the plurality of first non-volatile memory cells can include a switching element, a variable resistance element, and an electrode arranged in a first sequence. A plurality of second non-volatile memory cells can be on the second side of the plurality of first conductive lines and each can be coupled to the third conductive line and to a respective one of the plurality of first conductive lines, wherein each of the plurality of second non-volatile memory cells includes a switching element, a variable resistance element, and an electrode that are arranged in a second sequence, wherein the first sequence and the second sequence are symmetrical with one another about the plurality of first conductive lines.

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