公开(公告)号：US20240154017A1

公开(公告)日：2024-05-09

申请号：US18378992

申请日：2023-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHWAN KIM ,  WANDON KIM ,  JUNKI PARK ,  HYUNBAE LEE ,  HYOSEOK CHOI

IPC: H01L29/45 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including a first region and a second region. a first gate structure on the first region of the substrate, a first source/drain layer on a portion of the substrate adjacent to the first gate structure. a second gate structure on the second region of the substrate. a second source/drain layer on a portion of the substrate adjacent to the second gate structure. and a first contact plug including a first metal silicide pattern on the first source/drain layer. The first metal silicide pattern includes a silicide of a first metal and a silicide of a second metal different from the first metal. The device further includes a first conductive pattern on the first metal silicide pattern, a second contact plug including a second metal silicide pattern on the second source/drain layer, and a second conductive pattern on the second metal silicide pattern. The second metal silicide pattern includes a silicide of the first and second metals. A first ratio of the first metal to the second metal included in the first metal silicide pattern is different from a second ratio of the first metal to the second metal included in the second metal silicide pattern.

公开(公告)号：US20210082917A1

公开(公告)日：2021-03-18

申请号：US16840880

申请日：2020-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  JAEYEOL SONG ,  WANDON KIM ,  BYOUNGHOON LEE ,  MUSARRAT HASAN

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes first and second active patterns on first and second active regions of a substrate, respectively, a pair of first source/drain patterns and a first channel pattern therebetween which are in an upper portion of the first active pattern, a pair of second source/drain patterns and a second channel pattern therebetween which are in an upper portion of the second active pattern, and first and second gate electrodes intersecting the first and second channel patterns, respectively. Each of the first and second gate electrodes includes a first metal pattern adjacent to a corresponding one of the first and second channel patterns. The first and second channel patterns include SiGe. A Ge concentration of the second channel pattern is higher than a Ge concentration of the first channel pattern. A thickness of the first metal pattern of the second gate electrode is greater than a thickness of the first metal pattern of the first gate electrode.

公开(公告)号：US20200287013A1

公开(公告)日：2020-09-10

申请号：US16584464

申请日：2019-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNGHOON LEE ,  JONGHO PARK ,  WANDON KIM ,  SANGJIN HYUN

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/78 ,  H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/423

Abstract: A semiconductor device includes a substrate having first and second active regions, first and second active patterns on the first and second active regions, first and second gate electrodes running across the first and second active patterns, and a high-k dielectric layer between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode. The first gate electrode includes a work function metal pattern and an electrode pattern. The second gate electrode includes a first work function metal pattern, a second work function metal pattern, and an electrode pattern. The first work function metal pattern contains the same impurity as that of the high-k dielectric layer. An impurity concentration of the first work function metal pattern of the second gate electrode is greater than that of the work function metal pattern of the first gate electrode.

公开(公告)号：US20200013898A1

公开(公告)日：2020-01-09

申请号：US16458412

申请日：2019-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGHYUK YIM ,  WANDON KIM ,  WEONHONG KIM ,  JONGHO PARK ,  HYEONJUN BAEK ,  BYOUNGHOON LEE ,  SANGJIN HYUN

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/08

Abstract: A semiconductor device includes a substrate including first and second active regions, first and second active patterns disposed on the first and second active regions, respectively, first and second gate electrodes crossing the first and second active patterns, respectively, a first gate insulating pattern interposed between the first active pattern and the first gate electrode, and a second gate insulating pattern interposed between the second active pattern and the second gate electrode. The first gate insulating pattern includes a first dielectric pattern and a first ferroelectric pattern disposed on the first dielectric pattern. The second gate insulating pattern includes a second dielectric pattern. A threshold voltage of a transistor in the first active region is different from a threshold voltage of a transistor in the second active region.