公开(公告)号：US20140021514A1

公开(公告)日：2014-01-23

申请号：US13926553

申请日：2013-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01L21/8252 ,  H01L27/0605

Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

Abstract translation: 氮化物系半导体二极管包括衬底，设置在衬底上的第一半导体层以及设置在第一半导体层上的第二半导体层。 第一和第二半导体层包括氮化物基半导体。 第二半导体层的第一部分可以具有比第二半导体层的第二部分薄的厚度。 二极管还可以包括设置在第二半导体层上的绝缘层，覆盖第二半导体层的第一部分并与第一半导体层和第二半导体层形成欧姆接触的第一电极，以及与第二半导体层分开的第二电极 第一电极，第二电极与第一半导体层和第二半导体层形成欧姆接触。

公开(公告)号：US20140021480A1

公开(公告)日：2014-01-23

申请号：US13800614

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/0649 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: A HEMT according to example embodiments may include a first semiconductor layer, a second semiconductor layer configured to induce a 2-dimensional electron gas (2DEG) in the second semiconductor layer, an insulating mask layer on the second semiconductor layer, a depletion forming layer on one of a portion of the first semiconductor layer and a portion of the second semiconductor layer that is exposed by an opening defined by the insulating mask layer, a gate on the depletion forming layer, and a source and a drain on at least one of the first semiconductor layer and the second semiconductor layer. The source and drain may be spaced apart from the gate. The depleting forming layer may be configured to form a depletion region in the 2DEG.

Abstract translation: 根据示例性实施例的HEMT可以包括第一半导体层，被配置为在第二半导体层中诱导二维电子气（2DEG）的第二半导体层，在第二半导体层上的绝缘掩模层， 第一半导体层的一部分和由绝缘掩模层限定的开口暴露的第二半导体层的一部分，耗尽形成层上的栅极以及至少一个的源极和漏极 第一半导体层和第二半导体层。 源极和漏极可以与栅极间隔开。 耗尽形成层可以被配置为在2DEG中形成耗尽区。

公开(公告)号：US20150048421A1

公开(公告)日：2015-02-19

申请号：US14282466

申请日：2014-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-hwan PARK ,  Jai-kwang SHIN ,  Ki-yeol PARK ,  Jae-joon OH ,  Woo-chul JEON ,  Hyo-ji CHOI

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/1058 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: Provided are high electron mobility transistors (HEMTs), methods of manufacturing the HEMTs, and electronic devices including the HEMTs. An HEMT may include an impurity containing layer, a partial region of which is selectively activated. The activated region of the impurity containing layer may be used as a depletion forming element. Non-activated regions may be disposed at opposite side of the activated region in the impurity containing layer. A hydrogen content of the activated region may be lower than the hydrogen content of the non-activated region. In another example embodiment, an HEMT may include a depletion forming element that includes a plurality of regions, and properties (e.g., doping concentrations) of the plurality of regions may be changed in a horizontal direction.

Abstract translation: 提供高电子迁移率晶体管（HEMT），制造HEMT的方法以及包括HEMT的电子器件。 HEMT可以包括含有杂质的层，其部分区域被选择性地活化。 含杂层的活化区域可以用作耗尽形成元件。 非活化区域可以设置在杂质含有层中的活化区域的相对侧。 活化区域的氢含量可能低于非活化区域的氢含量。 在另一个示例性实施例中，HEMT可以包括包含多个区域的耗尽形成元件，并且可以在水平方向上改变多个区域的特性（例如，掺杂浓度）。

公开(公告)号：US20140327043A1

公开(公告)日：2014-11-06

申请号：US14085121

申请日：2013-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-seob KIM ,  In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Woo-chul JEON ,  Hyuk-soon CHOI ,  Sun-kyu HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7787 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66462

Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

Abstract translation: 提供高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括：包含第一半导体材料的沟道层; 沟道供应层，包括第二半导体材料并在沟道层中产生二维电子气（2DEG）; 在所述沟道供给层中彼此分离的源电极和漏电极; 至少一个耗尽形成单元，其形成在所述沟道供应层上并在所述2DEG中形成耗尽区; 形成在所述至少一个耗尽形成单元上的至少一个栅电极; 连接所述至少一个耗尽形成单元和所述源电极的至少一个桥; 以及从所述源电极下方的所述至少一个桥延伸的接触部。

公开(公告)号：US20140151749A1

公开(公告)日：2014-06-05

申请号：US14091822

申请日：2013-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  In-jun HWANG

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02109 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/8613

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道层; 通道层上的通道供应层; 在所述沟道层和所述沟道供给层之一上彼此隔开的源电极和漏电极; 源电极和漏电极之间的沟道供给层的一部分上的栅电极; 在栅电极和沟道供应层之间的第一耗尽层; 以及在栅电极和漏电极之间的沟道供应层上的至少一个第二耗尽层。 所述至少一个第二耗尽形成层电连接到所述源电极。

公开(公告)号：US20140151747A1

公开(公告)日：2014-06-05

申请号：US14018833

申请日：2013-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

IPC: H01L29/778

CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/7787

Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管包括：包括第一半导体材料的沟道层; 沟道供应层，其被配置为在所述沟道层中产生二维电子气（2DEG），所述沟道供给层包括第二半导体材料; 源极和漏极彼此间隔开，并且沟道供应层的上表面限定栅电极接收部分; 第一栅电极; 以及与第一栅电极和栅电极接收部分间隔开的至少一个第二栅电极。 第一栅电极可以在栅极电极接收部分中，并且在源电极和漏电极之间。 所述至少一个第二栅电极可以在所述源电极和所述第一栅电极之间。

公开(公告)号：US20140091366A1

公开(公告)日：2014-04-03

申请号：US13922395

申请日：2013-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Woong-je SUNG ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L27/088 ,  H01L29/66

CPC classification number: H01L27/0883 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0694 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: Example embodiments relate to semiconductor devices and/or methods of manufacturing the same. According to example embodiments, a semiconductor device may include a first heterojunction field effect transistor (HFET) on a first surface of a substrate, and a second HFET. A second surface of the substrate may be on the second HFET. The second HFET may have different properties (characteristics) than the first HFET. One of the first and second HFETs may be of an n type, while the other thereof may be of a p type. The first and second HFETs may be high-electron-mobility transistors (HEMTs). One of the first and second HFETs may have normally-on properties, while the other thereof may have normally-off properties.

Abstract translation: 示例性实施例涉及半导体器件和/或其制造方法。 根据示例实施例，半导体器件可以包括在衬底的第一表面上的第一异质结场效应晶体管（HFET）和第二HFET。 衬底的第二表面可以在第二HFET上。 第二HFET可以具有与第一HFET不同的特性（特性）。 第一和第二HFET中的一个可以是n型，而另一个可以是p型。 第一和第二HFET可以是高电子迁移率晶体管（HEMT）。 第一和第二HFET中的一个可以具有通常的属性，而另一个可以具有正常的属性。

公开(公告)号：US20140042449A1

公开(公告)日：2014-02-13

申请号：US13732746

申请日：2013-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  Sun-kyu HWANG

IPC: H01L29/778 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括在通道层中的二维电子气体（2DEG），沟道供应层侧面的源电极和漏电极 在沟道供给层上并与源电极接触的耗尽型层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 耗尽形成层在2DEG中形成耗尽区。