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    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20130234207A1

    公开(公告)日：2013-09-12

    申请号：US13714957

    申请日：2012-12-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括：包括缓冲层的堆叠，包含二维电子气体（2DEG）通道的沟道层和相互堆叠的沟道供应层，所述堆叠限定 第一孔和彼此间隔开的第二孔。 第一电极，第二电极和第三电极沿着沟道供应层的第一表面彼此间隔开。 第一焊盘在缓冲层上并且延伸穿过堆叠的第一孔至第一电极。 第二焊盘位于缓冲层上并且延伸穿过堆叠的第二孔至第二电极。 第三焊盘在堆叠下方并电连接到第三电极。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140327043A1

    公开(公告)日：2014-11-06

    申请号：US14085121

    申请日：2013-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-seob KIM ,  In-jun HWANG ,  Jai-kwang SHIN ,  Jae-joon OH ,  Woo-chul JEON ,  Hyuk-soon CHOI ,  Sun-kyu HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/7787 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66462

    Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

    Abstract translation: 提供高电子迁移率晶体管（HEMT）和制造HEMT的方法。 HEMT包括：包含第一半导体材料的沟道层; 沟道供应层，包括第二半导体材料并在沟道层中产生二维电子气（2DEG）; 在所述沟道供给层中彼此分离的源电极和漏电极; 至少一个耗尽形成单元，其形成在所述沟道供应层上并在所述2DEG中形成耗尽区; 形成在所述至少一个耗尽形成单元上的至少一个栅电极; 连接所述至少一个耗尽形成单元和所述源电极的至少一个桥; 以及从所述源电极下方的所述至少一个桥延伸的接触部。

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140151749A1

    公开(公告)日：2014-06-05

    申请号：US14091822

    申请日：2013-11-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-chul JEON ,  Jong-seob KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  In-jun HWANG

    IPC: H01L29/778 ,  H01L21/02 ,  H01L29/66

    CPC classification number: H01L21/02109 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/8613

    Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.

    Abstract translation: 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道层; 通道层上的通道供应层; 在所述沟道层和所述沟道供给层之一上彼此隔开的源电极和漏电极; 源电极和漏电极之间的沟道供给层的一部分上的栅电极; 在栅电极和沟道供应层之间的第一耗尽层; 以及在栅电极和漏电极之间的沟道供应层上的至少一个第二耗尽层。 所述至少一个第二耗尽形成层电连接到所述源电极。

    HIGH-ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    HIGH-ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动晶体管及其制造方法

    公开(公告)号：US20140097470A1

    公开(公告)日：2014-04-10

    申请号：US13910417

    申请日：2013-06-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-seob KIM ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

    Abstract translation: 根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极 的栅电极。 通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。 耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

    IMAGE SENSOR INCLUDING HYBRID PIXEL STRUCTURE
    8.
    发明申请
    IMAGE SENSOR INCLUDING HYBRID PIXEL STRUCTURE 有权

    公开(公告)号：US20170148831A1

    公开(公告)日：2017-05-25

    申请号：US15312789

    申请日：2014-05-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyuk-soon CHOI ,  Jung-woo KIM ,  Myoung-hoon JUNG

    IPC: H01L27/146

    CPC classification number: H01L27/14607 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14649

    Abstract: Provided is an image sensor having a hybrid pixel structure in which pixels that sense visible light and pixels that sense ultraviolet light or infrared light are arranged together. For example, the image sensor includes a plurality of first pixels and a plurality of second pixels that are different in size. A width of each of the plurality of second pixels in a horizontal direction is a first integer multiple of a width of each of the plurality of first pixels in the horizontal direction, and a width of each of the plurality of second pixels in a vertical direction is a second integer multiple of a width of each of the plurality of first pixels in the vertical direction. The image sensor enables the pixels sensing ultraviolet light or infrared light, which have different sizes from the pixels sensing visible light, to be efficiently arranged together with the pixels sensing visible light, on the same substrate.

    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    高电子移动性晶体管及其制造方法

    公开(公告)号：US20140021510A1

    公开(公告)日：2014-01-23

    申请号：US13752821

    申请日：2013-01-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA

    IPC: H01L29/778 ,  H01L29/66

    CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

    Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.

    Abstract translation: 公开了一种较高电子迁移率晶体管（HEMT）及其制造方法。 根据示例实施例，HEMT可以包括位于沟道层和沟道供应层中的至少一个上的沟道层，源电极和漏电极上的沟道供应层，源极和源极之间的栅电极 漏电极，以及源极焊盘和漏极焊盘。 源极焊盘和漏极焊盘分别与源电极和漏电极电接触。 源极焊盘和漏极焊盘中的至少一个的至少一部分延伸到源电极和漏电极中的至少一个源极焊盘和漏极焊盘与其电接触的相应的一个。

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