Abstract:
An organometallic compound represented by Formula 1: wherein, in Formula 1, L11, M, R11 to R17, m, and n are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1: M(L1)n1(L2)n2 Formula 1 wherein in Formula 1, M, L1, L2, n1, and n2 are defined in the detailed description.
Abstract:
A method of a base station (BS) of a carrier aggregation (CA) is provided. The method includes determining whether a mobile station (MS) concurrently uses a first cell associated with a first carrier frequency and a second cell associated with a second carrier frequency, and controlling a handover of the MS using a measurement configuration set corresponding to a result of the determination among a plurality of measurement configuration sets that are set for each of handover related events.
Abstract:
An organometallic compound represented by one of Formulae 1A and 1B: wherein, in Formulae 1A and 1B, A11, b20, L11, M, m, n, and R15 to R20 are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1: wherein, in Formula 1, groups an variables are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1: wherein in Formula 1, R11 to R20, L11, m11, and n11 are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1, wherein M1 is beryllium, magnesium, aluminum, calcium, titanium, manganese, cobalt, copper, zinc, gallium, germanium, zirconium, ruthenium, rhodium, palladium, silver, rhenium, platinum, or gold; A1 to A3 are each independently a C5-C30 carbocyclic group or a C1-C30 heterocyclic group; A4 is a 5-membered heterocyclic group; A5 is at least two rings of a C7-C30 carbocyclic group comprising a 6-membered carbocyclic group, or A5 is at least two rings of a C1-C30 heterocyclic group comprising a 6-membered carbocyclic group or a 6-membered heterocyclic group; X10, X20, X30, and X40 to X44 are each independently C or N; T1 to T3 are each independently a single bond, *—N[(L1)a1-(R1)b1]—*′, *—B(R1)—*′, *—P(R1)—*′, *—C(R1)(R2)—*′, *—Si(R1)(R2)—*′, *—Ge(R1)(R2)—*′, *—S—*′, *—Se—*′, *—O—*′, *—C(═O)—*′, *—S(═O)—*′, *—S(═O)2—*′, *—C(R1)═C(R2)—*′, *—C(═S)—*′, or *—C≡C—*′; and wherein the other substituents may be understood by referring to the detailed description.
Abstract:
Clock generation and control in a semiconductor system having process, voltage and temperature (PVT) variation. A semiconductor device may include at least first and second ring oscillators, each disposed at locations respectively closest to first and second logic circuits of an operation circuit, and generating first and second oscillating signals. A detecting circuit is configured to perform a predetermined logic operation on the first oscillating signal and the second oscillating signal to generate a first clock signal. A calibration circuit is configured to receive the first clock signal from the detecting circuit and perform a delay control on each of the first ring oscillator and the second ring oscillator to generate a second clock signal for operating the operation circuit.
Abstract:
In one embodiment, the voltage droop monitoring circuit includes a ring oscillator circuit block configured to generate a plurality of oscillation signals and configured to output a selected oscillation signal from one of the plurality of oscillation signals based on a first control signal. The first control signal is based on a power supply voltage of a functional circuit block. The voltage droop monitoring circuit further includes a counter configured to generate a count value based on the selected oscillation signal, and a droop detector configured detect droop in the power supply voltage of the functional circuit block based on the count value and at least one threshold value.
Abstract:
A power gating circuit includes a first switch circuit, a gate circuit, and a second switch circuit. The first switch circuit is configured to disconnect a first voltage line from a second voltage line while a logic block connected to the first voltage line is in a first operation state. The gate circuit is configured to output a control signal having a first logical value if a level of a first voltage on the first voltage line is lower than a reference level while the logic block is in the first operation state. The second switch circuit configured to connect the first voltage line to the second voltage line based on the first logical value of the control signal. The reference level is based on a type of a logic gate included in the gate circuit.