Semiconductor data storage devices and methods of fabricating the same

    公开(公告)号:US11690231B2

    公开(公告)日:2023-06-27

    申请号:US17019641

    申请日:2020-09-14

    CPC classification number: H10B61/22 H10N50/01 H10N50/80

    Abstract: A method of fabricating a semiconductor device including providing a substrate; forming first and second lower conductive patterns, the and second lower conductive patterns being buried in an interlayer dielectric layer; forming a capping layer on the interlayer dielectric layer and a dummy layer on the capping layer; etching an exposed upper portion of the first lower conductive pattern to form a trench; forming a metal layer that covers the interlayer dielectric layer and the dummy layer such that the metal layer fills the trench; forming a magnetic tunnel junction layer on the metal layer; performing a patterning process to form a memory cell; and forming a first protective layer that covers a lateral surface of the memory cell, wherein, in the patterning process, the metal layer on the top surface of the interlayer dielectric layer is etched to form a first bottom electrode in the trench.

    Magnetic memory device
    12.
    发明授权

    公开(公告)号:US11152561B2

    公开(公告)日:2021-10-19

    申请号:US16867138

    申请日:2020-05-05

    Abstract: A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.

    Magnetic memory device and method for manufacturing the same

    公开(公告)号:US10897006B2

    公开(公告)日:2021-01-19

    申请号:US16286718

    申请日:2019-02-27

    Abstract: A magnetic memory device including a substrate including a cell region and a peripheral circuit region; a first interlayer insulating layer covering the cell region and the peripheral circuit region of the substrate; interconnection lines in the first interlayer insulating layer; a peripheral conductive line and a peripheral conductive contact on the first interlayer insulating layer on the peripheral circuit region, the peripheral conductive contact being between the peripheral conductive line and a corresponding one of the interconnection lines; a bottom electrode contact on the first interlayer insulating layer on the cell region and connected to a corresponding one of the interconnection lines; and a data storage pattern on the bottom electrode contact, wherein the peripheral conductive line is at a height between a top surface of the bottom electrode contact and a bottom surface of the bottom electrode contact.

    Walking assistance apparatus
    14.
    发明授权

    公开(公告)号:US10098804B2

    公开(公告)日:2018-10-16

    申请号:US14692257

    申请日:2015-04-21

    Abstract: A walking assistance apparatus for preventing offset occurring in between a rotating axis of a hip joint of a user and a rotating shaft of the walking assistance apparatus may be provided. The walking assistance apparatus includes a waist fixing apparatus configured to be fixed to a waist of a user, a connecting guide mounted at the waist fixing apparatus and configured to slide in an extension direction of the waist fixing apparatus and rotate on a rotating shaft extending in a vertical direction perpendicular to the extension direction, a rail unit mounted at one side of the connecting guide, the rail unit extending in a vertical direction, and a hip joint configured to slide along the rail unit.

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