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公开(公告)号:US11690231B2
公开(公告)日:2023-06-27
申请号:US17019641
申请日:2020-09-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seung Pil Ko , Yongjae Kim
Abstract: A method of fabricating a semiconductor device including providing a substrate; forming first and second lower conductive patterns, the and second lower conductive patterns being buried in an interlayer dielectric layer; forming a capping layer on the interlayer dielectric layer and a dummy layer on the capping layer; etching an exposed upper portion of the first lower conductive pattern to form a trench; forming a metal layer that covers the interlayer dielectric layer and the dummy layer such that the metal layer fills the trench; forming a magnetic tunnel junction layer on the metal layer; performing a patterning process to form a memory cell; and forming a first protective layer that covers a lateral surface of the memory cell, wherein, in the patterning process, the metal layer on the top surface of the interlayer dielectric layer is etched to form a first bottom electrode in the trench.
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公开(公告)号:US11152561B2
公开(公告)日:2021-10-19
申请号:US16867138
申请日:2020-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bae-Seong Kwon , Yongjae Kim , Kyungtae Nam , Kuhoon Chung
Abstract: A magnetic memory device includes a lower contact plug on a substrate, a magnetic tunnel junction pattern on the lower contact plug, a bottom electrode, which is between the lower contact plug and the magnetic tunnel junction pattern and is in contact with a bottom surface of the magnetic tunnel junction pattern, and a top electrode on a top surface of the magnetic tunnel junction pattern. Each of the bottom electrode, the magnetic tunnel junction pattern, and the top electrode has a thickness in a first direction, which is perpendicular to a top surface of the substrate. A first thickness of the bottom electrode is about 0.6 to 1.1 times a second thickness of the magnetic tunnel junction pattern.
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公开(公告)号:US10897006B2
公开(公告)日:2021-01-19
申请号:US16286718
申请日:2019-02-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kilho Lee , Gwanhyeob Koh , Yongjae Kim , Yoonjong Song
Abstract: A magnetic memory device including a substrate including a cell region and a peripheral circuit region; a first interlayer insulating layer covering the cell region and the peripheral circuit region of the substrate; interconnection lines in the first interlayer insulating layer; a peripheral conductive line and a peripheral conductive contact on the first interlayer insulating layer on the peripheral circuit region, the peripheral conductive contact being between the peripheral conductive line and a corresponding one of the interconnection lines; a bottom electrode contact on the first interlayer insulating layer on the cell region and connected to a corresponding one of the interconnection lines; and a data storage pattern on the bottom electrode contact, wherein the peripheral conductive line is at a height between a top surface of the bottom electrode contact and a bottom surface of the bottom electrode contact.
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公开(公告)号:US10098804B2
公开(公告)日:2018-10-16
申请号:US14692257
申请日:2015-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minhyung Lee , Yongjae Kim , Jeonghun Kim , Youngdo Kwon , Se-Gon Roh , Youn Baek Lee , Jongwon Lee , Byungjune Choi , Hyun Do Choi
Abstract: A walking assistance apparatus for preventing offset occurring in between a rotating axis of a hip joint of a user and a rotating shaft of the walking assistance apparatus may be provided. The walking assistance apparatus includes a waist fixing apparatus configured to be fixed to a waist of a user, a connecting guide mounted at the waist fixing apparatus and configured to slide in an extension direction of the waist fixing apparatus and rotate on a rotating shaft extending in a vertical direction perpendicular to the extension direction, a rail unit mounted at one side of the connecting guide, the rail unit extending in a vertical direction, and a hip joint configured to slide along the rail unit.
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