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公开(公告)号：US11171173B2
公开(公告)日：2021-11-09
申请号：US16519554
申请日：2019-07-23
发明人： Younggu Jin
IPC分类号： H01L27/146 , H04N5/357 , H04N5/378
摘要： Image sensors are provided. Image sensors may include unit pixels arranged in a first direction and a second direction crossing the first direction. Each of the unit pixels may include first and second floating diffusion regions and first and second photo gate electrodes between the first and second floating diffusion regions. The unit pixels may include a first unit pixel, a second unit pixel, and a third unit pixel sequentially arranged. The first floating diffusion region of the second unit pixel may be between the first photo gate electrode of the first unit pixel and the first photo gate electrode of the second unit pixel, and the second floating diffusion region of the second unit pixel may be between the second photo gate electrode of the second unit pixel and the second photo gate electrode of the third unit pixel.
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公开(公告)号：US10050078B2
公开(公告)日：2018-08-14
申请号：US15798387
申请日：2017-10-30
发明人： Younggu Jin , Changrok Moon , Duckhyung Lee , Seokha Lee
IPC分类号： H01L27/146 , G02B27/10
CPC分类号： H01L27/14649 , G02B27/10 , H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/14685
摘要： A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.
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公开(公告)号：US11843015B2
公开(公告)日：2023-12-12
申请号：US17686077
申请日：2022-03-03
发明人： Min Jang , Jungchak Ahn , Junsung Park , Younggu Jin
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L27/1463 , H01L27/1464 , H01L27/14621 , H01L27/14685 , H01L27/14625 , H01L27/14627 , H01L27/14641 , H01L27/14643
摘要： An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.
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公开(公告)号：US11729524B2
公开(公告)日：2023-08-15
申请号：US17726207
申请日：2022-04-21
发明人： Younggu Jin , Youngchan Kim , Sung-ho Choi
IPC分类号： H04N25/531 , H04N25/58 , H04N25/75 , H04N25/77 , H04N25/533 , G01S7/486 , H04N25/766
CPC分类号： H04N25/531 , H04N25/533 , H04N25/58 , H04N25/75 , H04N25/766 , H04N25/77
摘要： Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.
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公开(公告)号：US11581357B2
公开(公告)日：2023-02-14
申请号：US16778122
申请日：2020-01-31
发明人： Younggu Jin , Youngchan Kim , Taesub Jung , Yonghun Kwon , Moosup Lim
IPC分类号： H01L27/146 , G01S7/4865 , G01B11/22 , G01S17/894
摘要： A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.
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公开(公告)号：US11302733B2
公开(公告)日：2022-04-12
申请号：US16132075
申请日：2018-09-14
发明人： Min Jang , Jungchak Ahn , Junsung Park , Younggu Jin
IPC分类号： H01L31/0232 , H01L27/146
摘要： An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.
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公开(公告)号：US20220018946A1
公开(公告)日：2022-01-20
申请号：US17139594
申请日：2020-12-31
发明人： Younggu Jin
IPC分类号： G01S7/4915 , G01S17/894
摘要： A method of operating a time-of-flight (ToF) sensor including at least one depth pixel having a multi-tap structure and a light source illuminating a transmission light to an object is provided. An operation mode of a ToF sensor is determined among a distance detection mode to sense a distance to an object and a plurality of additional operation modes. A plurality of taps of a depth pixel and a light source are controlled based on the determined operation mode such that the plurality of taps generate a plurality of sample data corresponding to the determined operation mode. A sensing result corresponding to the selected operation mode is determined based on the plurality of sample data. A plurality of functions, in addition to a function of the ToF sensor to measure a distance to an object, may be performed efficiently by controlling the plurality of taps of the depth pixel and the light source depending on the operation modes.
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18.发明申请公开(公告)号：US20190281241A1
公开(公告)日：2019-09-12
申请号：US16225642
申请日：2018-12-19
发明人： Younggu Jin , Youngchan Kim , Min-Sun Keel
IPC分类号： H04N5/369 , H04N5/374 , H04N5/359 , H04N5/378 , H04N5/3745
摘要： Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.
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公开(公告)号：US09679929B2
公开(公告)日：2017-06-13
申请号：US14052168
申请日：2013-10-11
发明人： GwideokRyan Lee , SangChul Sul , Myungwon Lee , Min-ho Kim , Taechan Kim , Taeseok Oh , KwangHyun Lee , Taeyon Lee , Younggu Jin
IPC分类号： H01L27/146 , B82Y20/00
CPC分类号： H01L27/14609 , B82Y20/00 , H01L27/1461 , H01L27/14612 , H01L27/14679
摘要： A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.
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