公开(公告)号：US11290673B2

公开(公告)日：2022-03-29

申请号：US16876567

申请日：2020-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu Jin ,  Youngchan Kim ,  Moosup Lim

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/369

Abstract: According to at least some example embodiments of the inventive concepts, a sensor includes a pixel array including a pixel configured to generate a first pixel signal and a second pixel signal, based on a light sensed during a window time of a sensing time; processing circuitry configured to select a measuring range from among a plurality of measuring ranges and set a width of the window time based on the selected measuring range; a converting circuit configured to convert the first and second pixel signals into digital signals; and a driving circuit configured to generate an overflow control signal, a first photo gate signal, and a second photo gate signal so as to sense the light during the window time, wherein the pixel includes, a photoelectric conversion element, first and second readout circuits configured to receive charges, and an overflow transistor configured to remove charges.

公开(公告)号：US11171173B2

公开(公告)日：2021-11-09

申请号：US16519554

申请日：2019-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu Jin

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/378

Abstract: Image sensors are provided. Image sensors may include unit pixels arranged in a first direction and a second direction crossing the first direction. Each of the unit pixels may include first and second floating diffusion regions and first and second photo gate electrodes between the first and second floating diffusion regions. The unit pixels may include a first unit pixel, a second unit pixel, and a third unit pixel sequentially arranged. The first floating diffusion region of the second unit pixel may be between the first photo gate electrode of the first unit pixel and the first photo gate electrode of the second unit pixel, and the second floating diffusion region of the second unit pixel may be between the second photo gate electrode of the second unit pixel and the second photo gate electrode of the third unit pixel.

公开(公告)号：US10050078B2

公开(公告)日：2018-08-14

申请号：US15798387

申请日：2017-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu Jin ,  Changrok Moon ,  Duckhyung Lee ,  Seokha Lee

IPC: H01L27/146 ,  G02B27/10

CPC classification number: H01L27/14649 ,  G02B27/10 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.

公开(公告)号：US12174323B2

公开(公告)日：2024-12-24

申请号：US17139594

申请日：2020-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu Jin

IPC: G01C3/08 ,  G01S7/4915 ,  G01S17/894

Abstract: A method of operating a time-of-flight (ToF) sensor including at least one depth pixel having a multi-tap structure and a light source illuminating a transmission light to an object is provided. An operation mode of a ToF sensor is determined among a distance detection mode to sense a distance to an object and a plurality of additional operation modes. A plurality of taps of a depth pixel and a light source are controlled based on the determined operation mode such that the plurality of taps generate a plurality of sample data corresponding to the determined operation mode. A sensing result corresponding to the selected operation mode is determined based on the plurality of sample data. A plurality of functions, in addition to a function of the ToF sensor to measure a distance to an object, may be performed efficiently by controlling the plurality of taps of the depth pixel and the light source depending on the operation modes.

公开(公告)号：US11843015B2

公开(公告)日：2023-12-12

申请号：US17686077

申请日：2022-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jang ,  Jungchak Ahn ,  Junsung Park ,  Younggu Jin

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14685 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643

Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

公开(公告)号：US11729524B2

公开(公告)日：2023-08-15

申请号：US17726207

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu Jin ,  Youngchan Kim ,  Sung-ho Choi

IPC: H04N25/531 ,  H04N25/58 ,  H04N25/75 ,  H04N25/77 ,  H04N25/533 ,  G01S7/486 ,  H04N25/766

CPC classification number: H04N25/531 ,  H04N25/533 ,  H04N25/58 ,  H04N25/75 ,  H04N25/766 ,  H04N25/77

Abstract: Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.

公开(公告)号：US11581357B2

公开(公告)日：2023-02-14

申请号：US16778122

申请日：2020-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu Jin ,  Youngchan Kim ,  Taesub Jung ,  Yonghun Kwon ,  Moosup Lim

IPC: H01L27/146 ,  G01S7/4865 ,  G01B11/22 ,  G01S17/894

Abstract: A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

公开(公告)号：US11302733B2

公开(公告)日：2022-04-12

申请号：US16132075

申请日：2018-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Jang ,  Jungchak Ahn ,  Junsung Park ,  Younggu Jin

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

公开(公告)号：US20220018946A1

公开(公告)日：2022-01-20

申请号：US17139594

申请日：2020-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu Jin

IPC: G01S7/4915 ,  G01S17/894

Abstract: A method of operating a time-of-flight (ToF) sensor including at least one depth pixel having a multi-tap structure and a light source illuminating a transmission light to an object is provided. An operation mode of a ToF sensor is determined among a distance detection mode to sense a distance to an object and a plurality of additional operation modes. A plurality of taps of a depth pixel and a light source are controlled based on the determined operation mode such that the plurality of taps generate a plurality of sample data corresponding to the determined operation mode. A sensing result corresponding to the selected operation mode is determined based on the plurality of sample data. A plurality of functions, in addition to a function of the ToF sensor to measure a distance to an object, may be performed efficiently by controlling the plurality of taps of the depth pixel and the light source depending on the operation modes.

公开(公告)号：US20190281241A1

公开(公告)日：2019-09-12

申请号：US16225642

申请日：2018-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu Jin ,  Youngchan Kim ,  Min-Sun Keel

IPC: H04N5/369 ,  H04N5/374 ,  H04N5/359 ,  H04N5/378 ,  H04N5/3745

Abstract: Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.