SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230154819A1

    公开(公告)日:2023-05-18

    申请号:US18154919

    申请日:2023-01-16

    CPC classification number: H01L23/367 H01L25/0652 H01L23/3128

    Abstract: A semiconductor package including a semiconductor chip, an interposer on the semiconductor chip, and a molding layer covering at least a portion of the semiconductor chip and at least a portion of the interposer may be provided. The interposer includes a interposer substrate and a heat dissipation pattern penetrating the interposer substrate and electrically insulated from the semiconductor chip. The heat dissipation pattern includes a through electrode disposed in the interposer substrate and an upper pad disposed on an upper surface of the interposer substrate and connected to the through electrode. The molding layer covers at least a portion of a sidewall of the upper pad and the upper surface of the interposer substrate. At least a portion of an upper surface of the upper pad is not covered by the molding layer.

    SEMICONDUCTOR PACKAGE
    14.
    发明申请

    公开(公告)号:US20220189907A1

    公开(公告)日:2022-06-16

    申请号:US17367995

    申请日:2021-07-06

    Abstract: A semiconductor package including an interposer substrate, first to third semiconductor chips on the interposer substrate to face each other, an underfill part between each of the first to third semiconductor chips and the interposer substrate, a first side-fill part extending upward from a lower end of side walls of the first to third semiconductor chips, and a second side-fill part between the side walls of the first to third semiconductor chips and extending from the first side-fill part to an upper end of the side walls of the first to third semiconductor chips may be provided.

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