公开(公告)号：US09159634B2

公开(公告)日：2015-10-13

申请号：US14158690

申请日：2014-01-17

申请人： Schott AG

发明人： Robert Hettler ,  Kenneth Tan ,  Georg Mittermeier ,  Karsten Droegemueller

IPC分类号： H01L23/48 ,  H01L29/32 ,  H01L23/08 ,  H01L23/66 ,  H01L23/64 ,  H01L23/045 ,  H01L23/31

CPC分类号： H01L23/08 ,  H01L23/045 ,  H01L23/3157 ,  H01L23/64 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6622 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48245 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/2065 ,  H01L2924/20649 ,  H01L2924/20645 ,  H01L2924/20644 ,  H01L2924/20643 ,  H01L2224/45099 ,  H01L2924/00

摘要： A transistor outline housing is provided that has bonding wires on an upper surface. The bonding wires are reduced in length and have connection leads with an excess length at an end opposite the bonding end.

摘要翻译： 提供了在上表面具有接合线的晶体管轮廓外壳。 接合线的长度减小，并且在与接合端相对的端部处具有连续引线，其具有多余的长度。

公开(公告)号：US09054079B2

公开(公告)日：2015-06-09

申请号：US14025581

申请日：2013-09-12

申请人： Google Inc.

发明人： James Etzkorn

IPC分类号： G02C7/04 ,  H01L23/48 ,  H01L21/56 ,  H01L23/00

CPC分类号： G02C11/10 ,  A61B5/6821 ,  A61B2562/12 ,  B29D11/00048 ,  B29D11/00807 ,  G02C7/04 ,  G02C7/049 ,  H01L21/56 ,  H01L21/563 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/48 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/97 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/08225 ,  H01L2224/11312 ,  H01L2224/13109 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8012 ,  H01L2224/8085 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/00 ,  H01L2224/83104 ,  H01L2224/05599 ,  H01L2924/013 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/00012 ,  H01L2924/0665

摘要： A contact lens having a thin silicon chip integrated therein is provided along with methods for assembling the silicon chip within the contact lens. In an aspect, a method includes creating a plurality of lens contact pads on a lens substrate and creating a plurality of chip contact pads on a chip. The method further involves applying assembly bonding material to the each of the plurality of lens contact pads or chip contact pads, aligning the plurality of lens contact pads with the plurality of chip contact pads, bonding the chip to the lens substrate via the assembly bonding material using flip chip bonding, and forming a contact lens with the lens substrate.

摘要翻译： 集成有薄硅芯片的隐形眼镜与隐形眼镜中的硅芯片的组装方法一起提供。 一方面，一种方法包括在透镜基板上形成多个透镜接触焊盘并在芯片上产生多个芯片接触焊盘。 该方法还包括将组装接合材料施加到多个透镜接触焊盘或芯片接触焊盘中的每一个上，将多个透镜接触焊盘与多个芯片接触焊盘对准，通过组装接合材料将芯片粘合到透镜基板 使用倒装芯片接合，并且与透镜基板形成隐形眼镜。

公开(公告)号：US20140085599A1

公开(公告)日：2014-03-27

申请号：US14025581

申请日：2013-09-12

申请人： Google Inc.

发明人： James Etzkorn

IPC分类号： G02C7/04 ,  H01L23/00

CPC分类号： G02C11/10 ,  A61B5/6821 ,  A61B2562/12 ,  B29D11/00048 ,  B29D11/00807 ,  G02C7/04 ,  G02C7/049 ,  H01L21/56 ,  H01L21/563 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/48 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/97 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/08225 ,  H01L2224/11312 ,  H01L2224/13109 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8012 ,  H01L2224/8085 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/00 ,  H01L2224/83104 ,  H01L2224/05599 ,  H01L2924/013 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/00012 ,  H01L2924/0665

摘要： A contact lens having a thin silicon chip integrated therein is provided along with methods for assembling the silicon chip within the contact lens. In an aspect, a method includes creating a plurality of lens contact pads on a lens substrate and creating a plurality of chip contact pads on a chip. The method further involves applying assembly bonding material to the each of the plurality of lens contact pads or chip contact pads, aligning the plurality of lens contact pads with the plurality of chip contact pads, bonding the chip to the lens substrate via the assembly bonding material using flip chip bonding, and forming a contact lens with the lens substrate.

摘要翻译： 集成有薄硅芯片的隐形眼镜与隐形眼镜中的硅芯片的组装方法一起提供。 一方面，一种方法包括在透镜基板上形成多个透镜接触焊盘并在芯片上产生多个芯片接触焊盘。 该方法还包括将组装接合材料施加到多个透镜接触焊盘或芯片接触焊盘中的每一个上，将多个透镜接触焊盘与多个芯片接触焊盘对准，通过组装接合材料将芯片粘合到透镜基板 使用倒装芯片接合，并且与透镜基板形成隐形眼镜。

公开(公告)号：US20140084489A1

公开(公告)日：2014-03-27

申请号：US13627574

申请日：2012-09-26

申请人： Google Inc.

发明人： James Etzkorn

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： G02C11/10 ,  A61B5/6821 ,  A61B2562/12 ,  B29D11/00048 ,  B29D11/00807 ,  G02C7/04 ,  G02C7/049 ,  H01L21/56 ,  H01L21/563 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/48 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/97 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/08225 ,  H01L2224/11312 ,  H01L2224/13109 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8012 ,  H01L2224/8085 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/00 ,  H01L2224/83104 ,  H01L2224/05599 ,  H01L2924/013 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/00012 ,  H01L2924/0665

摘要： A contact lens having a thin silicon chip integrated therein is provided along with methods for assembling the silicon chip within the contact lens. In an aspect, a method includes creating a plurality of lens contact pads on a lens substrate and creating a plurality of chip contact pads on a chip. The method further involves applying assembly bonding material to the each of the plurality of lens contact pads or chip contact pads, aligning the plurality of lens contact pads with the plurality of chip contact pads, bonding the chip to the lens substrate via the assembly bonding material using flip chip bonding, and forming a contact lens with the lens substrate.

公开(公告)号：US20080135997A1

公开(公告)日：2008-06-12

申请号：US12032159

申请日：2008-02-15

申请人： Hun-Teak Lee ,  Jong-Kook Kim ,  Chul-Sik Kim ,  Ki-Youn Jang ,  Rajendra D. Pendse

发明人： Hun-Teak Lee ,  Jong-Kook Kim ,  Chul-Sik Kim ,  Ki-Youn Jang ,  Rajendra D. Pendse

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L24/85 ,  H01L23/13 ,  H01L23/4952 ,  H01L23/49833 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48479 ,  H01L2224/4848 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48699 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/49109 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2924/2065 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4554

摘要： A wire bond interconnection between a die pad and a bond finger includes a support pedestal at a bond site of the lead finger, a ball bond on the die pad, and a stitch bond on the support pedestal, in which a width of the lead finger at the bond site is less than a diameter of the support pedestal. Also, a semiconductor package including a die mounted onto and electrically connected by a plurality of wire bonds to a substrate, in which each of the wire bonds includes a wire ball bonded to a pad on the die and stitch bonded to a support pedestal on a bond site on a lead finger, and in which the width of the lead finger at the bond site is less than the diameter of the support pedestal. Also, such a package in which the package substrate includes a two-tier substrate, each tier including a plurality of lead fingers having a lead finger bond pitch about twice the die pad pitch, the lead fingers of the first tier and the second tier having a staggered arrangement. In some embodiments the support pedestal is formed using a wire bonding tool as in formation of a stud bump, and in such embodiments the support pedestal is metallurgically bonded to the lead finger. Also, a method for forming a wire bond interconnection between a semiconductor die and a substrate, by providing a die affixed on a die mount portion of a first side of a substrate and oriented with the active side oriented away from the substrate, the substrate having patterned traces including lead fingers in the first surface of the substrate; forming a support pedestal on a bond site of a lead finger; forming a first bond on a die pad; and forming a second bond on the support pedestal.

摘要翻译： 芯片焊盘和键合指状物之间的引线键合互连包括在引线指的键合位置处的支撑基座，芯片焊盘上的球接合以及支撑基座上的线圈接合，其中引线指 在焊接点处小于支撑基座的直径。 此外，包括安装在多个引线键合并且电连接到基板的裸片的半导体封装，其中每个引线键合包括接合到模具上的焊盘的线球，并且在与基板上的支撑基座上接合 引线指的键位置，并且其中引线指在键合位置处的宽度小于支撑基座的直径。 另外，封装基板包括双层基板的这种封装，每层包括多个引线指，其具有大约两倍于管芯焊盘间距的引线接合间距，第一层和第二层的引线指具有 交错排列 在一些实施例中，在形成柱形凸块时使用引线接合工具形成支撑基座，并且在这种实施例中，支撑基座冶金地结合到引线指。 另外，在半导体管芯和基板之间形成引线接合互连的方法，其特征在于，通过在基板的第一面的芯片安装部上设置模具，并且将所述有源面取向为远离所述基板，所述基板具有 图案化痕迹，包括在所述衬底的第一表面中的引线指; 在引线指的接合部位上形成支撑基座; 在芯片焊盘上形成第一键; 以及在所述支撑座上形成第二接合。

公开(公告)号：US20070096340A1

公开(公告)日：2007-05-03

申请号：US11262057

申请日：2005-10-28

申请人： Pierre-Marie Piel ,  Paul Hart ,  Jeffrey Jones

发明人： Pierre-Marie Piel ,  Paul Hart ,  Jeffrey Jones

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L25/16 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/48011 ,  H01L2224/4809 ,  H01L2224/48095 ,  H01L2224/49052 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/13055 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： According to one aspect of the present invention, an electronic assembly is provided. The electronic assembly comprises a substrate with a lead connected thereto and first and second microelectronic components on the substrate. The first microelectronic component has first and second portions. A plurality of conductors interconnects the first microelectronic component and a selected one of the lead and the second microelectronic component. A first of the conductors contacts the first portion of the first microelectronic component and has a first inductance, and a second of the conductors contacts the second portion of the microelectronic component and has a second inductance. The second inductance is greater than the first inductance.

摘要翻译： 根据本发明的一个方面，提供一种电子组件。 电子组件包括具有与其连接的引线的基板和在基板上的第一和第二微电子部件。 第一微电子部件具有第一和第二部分。 多个导体将第一微电子部件和引线和第二微电子部件中的选定引线互连。 导体中的第一个接触第一微电子部件的第一部分并且具有第一电感，并且第二导体接触微电子部件的第二部分并且具有第二电感。 第二电感大于第一电感。

公开(公告)号：US07068521B2

公开(公告)日：2006-06-27

申请号：US11194701

申请日：2005-08-02

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/58

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

公开(公告)号：US06943441B2

公开(公告)日：2005-09-13

申请号：US10291840

申请日：2002-11-12

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/04 ,  H01L23/49 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L29/22 ,  H03F3/195 ,  H03F3/60 ,  H05K1/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/40 ,  H01L21/60

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸小，将电连接到固定参考电位的线的衬底侧接合电极放置在比半导体芯片的离开半导体芯片的一侧更远的位置处， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20170186714A1

公开(公告)日：2017-06-29

申请号：US15456746

申请日：2017-03-13

申请人： Mitsubishi Electric Corporation

发明人： Yosuke NAKATA ,  Masayoshi TARUTANI

IPC分类号： H01L23/00 ,  H01L23/498

CPC分类号： H01L24/05 ,  H01L23/498 ,  H01L24/01 ,  H01L24/03 ,  H01L24/08 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/034 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/16113 ,  H01L2224/16245 ,  H01L2224/29101 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73251 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/07025 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/20645 ,  H01L2924/20646 ,  H01L2924/20647 ,  H01L2924/20648 ,  H01L2924/20649 ,  H01L2924/2065 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01201 ,  H01L2924/01014

摘要： A semiconductor device of the present invention includes a semiconductor element, a surface electrode formed on a surface of the semiconductor element, a metal film formed on the surface electrode so as to have a joining portion and a stress relieving portion formed so as to border on and surround the joining portion, solder joined to the joining portion while avoiding the stress relieving portion, and an external electrode joined to the joining portion through the solder.

公开(公告)号：US20150287661A1

公开(公告)日：2015-10-08

申请号：US14677601

申请日：2015-04-02

申请人： Kyocera America Inc

发明人： Mark EBLEN ,  Franklin KIM ,  Chong Il-Park ,  Shinichi HIRA

IPC分类号： H01L23/367 ,  H01L23/00 ,  H01L25/00 ,  H01L21/48 ,  H01L23/373 ,  H01L25/065

CPC分类号： H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L23/047 ,  H01L23/10 ,  H01L23/36 ,  H01L23/3736 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/32505 ,  H01L2224/45124 ,  H01L2224/4809 ,  H01L2224/48137 ,  H01L2224/48153 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83801 ,  H01L2224/85399 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/206 ,  H01L2924/2065 ,  H01L2924/30111 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/0665 ,  H01L2924/0105

摘要： An electronics packaging system includes an insulator that electrically insulates a heat sink from electrical leads. An interface between the insulator and the heat sink includes a stress reliever constructed such that a stiffness of the interface is greater than the stiffness of the interface without the stress reliever.

摘要翻译： 电子封装系统包括使散热器与电引线电绝缘的绝缘体。 绝缘体和散热器之间的界面包括应力消除器，其被构造成使得界面的刚度大于没有应力消除器的界面刚度。