公开(公告)号：US11661547B2

公开(公告)日：2023-05-30

申请号：US16883989

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Shin Ae Jun ,  Taekhoon Kim ,  Garam Park ,  Yong Seok Han ,  Eun Joo Jang ,  Hyo Sook Jang ,  Tae Won Jeong ,  Shang Hyeun Park

IPC: C09K11/62 ,  C09K11/70 ,  C09K11/08 ,  C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  C08K3/32 ,  C08K3/30 ,  G02F1/1335 ,  G02F1/13357 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/025 ,  C08K3/30 ,  C08K3/32 ,  C09K11/703 ,  C09K11/883 ,  G02F1/133516 ,  G02F1/133617 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08K2201/001 ,  G02F2202/36 ,  Y10S977/774 ,  Y10S977/896 ,  Y10S977/95

Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.

公开(公告)号：US11639469B2

公开(公告)日：2023-05-02

申请号：US16254676

申请日：2019-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  The Governing Council of the University of Toronto

Inventor： Jihyun Min ,  Eun Joo Jang ,  Hyo Sook Jang ,  Ankit Jain ,  Edward Sargent ,  Oleksandr Voznyy ,  Larissa Levina ,  Sjoerd Hoogland ,  Petar Todorovic ,  Makhsud Saidaminov

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/67 ,  C01G25/00 ,  C01G23/00 ,  C01B19/00 ,  B82Y40/00 ,  B82Y20/00 ,  H01L21/02

Abstract: A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same: M1M2Cha3  Chemical Formula 1 wherein M1 is Ca, Sr, Ba, or a combination thereof, M2 is Ti, Zr, Hf, or a combination thereof, and Cha is S, Se, Te, or a combination thereof.

公开(公告)号：US11634628B2

公开(公告)日：2023-04-25

申请号：US16519188

申请日：2019-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Seon-Yeong Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Yong Wook Kim

IPC: C09K11/62 ,  C09K11/70 ,  H01L29/12 ,  C09K11/88 ,  H01L27/32

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US11591515B2

公开(公告)日：2023-02-28

申请号：US16427561

申请日：2019-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Ho Kim ,  Chan Su Kim ,  Jaejun Chang ,  Eun Joo Jang ,  Hongkyu Seo

IPC: C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  H01L33/06 ,  C09K11/02 ,  B82Y20/00

Abstract: A semiconductor nanocrystal-ligand composite that includes a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on the surface of the semiconductor nanocrystal, wherein the organic ligand includes a moiety having a conjugation structure, and a first functional group (X) and a second functional group (Y) linked to the moiety having a conjugation structure, wherein the first functional group (X) is bound to the surface of the semiconductor nanocrystal and the second functional group (Y) is present at an ortho position with respect to the first functional group (X).

公开(公告)号：US11572504B2

公开(公告)日：2023-02-07

申请号：US16851509

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Eun Joo Jang

IPC: C09K11/54 ,  C09K11/64 ,  C09K11/02 ,  C09K11/57 ,  C09K11/58 ,  C09K11/88 ,  B82Y20/00

Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

公开(公告)号：US11566345B2

公开(公告)日：2023-01-31

申请号：US16281232

申请日：2019-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: B32B5/16 ,  B05D7/00 ,  B82Y20/00 ,  C30B29/48 ,  C01G9/08 ,  H01L51/50 ,  H01L33/28 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  B82Y40/00

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US11563143B2

公开(公告)日：2023-01-24

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C09K11/88 ,  C01B19/04

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US11512252B2

公开(公告)日：2022-11-29

申请号：US15251643

申请日：2016-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Eun Joo Jang ,  Yongwook Kim ,  Jihyun Min ,  Hyo Sook Jang ,  Shin Ae Jun ,  Taekhoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/70 ,  H01L33/50 ,  B82Y20/00

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US11444242B2

公开(公告)日：2022-09-13

申请号：US16701293

申请日：2019-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Heejae Lee ,  Oul Cho ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: H01L45/00 ,  H01L27/24

Abstract: A resistive memory device including a first electrode and a second electrode facing each other and a variable resistance layer disposed between the first electrode and the second electrode, wherein the variable resistance layer includes cadmium-free quantum dots (Cd-free quantum dots) and at least a portion of the Cd-free quantum dots include a Cd-free quantum dot including a halide anion on a surface of the Cd-free quantum dot, a method of manufacturing the same and an electronic device.

公开(公告)号：US11271190B2

公开(公告)日：2022-03-08

申请号：US16857727

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Gyu Han ,  Kwanghee Kim ,  Heejae Lee ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/52 ,  C09K11/88 ,  H01L51/00 ,  H01L51/50

Abstract: Provided are a light emitting device includes a first electrode and a second electrode facing each other; an emissive layer disposed between the first electrode and the second electrode and a display device including the same. The emissive layer comprises: a first emission layer disposed on the first electrode and having a hole transporting property; a second emission layer and a third emission layer disposed on the first emission layer; wherein the second emission layer comprises an organic compound having a bipolar transport property and the third emission layer has a composition different from the first emission layer and the second emission layer; wherein the first emission layer, the second emission layer, and the third emission layer comprises a plurality of quantum dots, and wherein the first emission layer, the second emission layer, and the third emission layer are configured to emit light of a same color.