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公开(公告)号:US10660471B2
公开(公告)日:2020-05-26
申请号:US15858806
申请日:2017-12-29
Applicant: Samsung Electronics Co., Ltd
Inventor: Tae-Hun Kim , Jong-Hoon Lee , Kun-Woo Choi , Seo Kang Kim , Woo Joo Kim , In Ki Jeon , Seong Joo Cho
IPC: F24C15/00 , F24C15/02 , F24C15/08 , F24C15/32 , F24C15/20 , A21B1/24 , A21B1/26 , A21B1/28 , A47J27/12 , A47J37/06 , H05B1/02 , H05B6/64
Abstract: Disclosed herein is a cooking appliance having an improved cooling mechanism. The cooking appliance includes a first cavity forming a first cooking chamber and a second cavity forming a second cooking chamber, and has a cooling mechanism for cooling both the first cavity and the second cavity. A separate third cooling channel is formed to exhaust air from the first cooking chamber. A vent for the first and second cavities may be formed at a lower portion of the second cavity such that air may be exhausted via the vent.
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公开(公告)号:US10482973B2
公开(公告)日:2019-11-19
申请号:US16014222
申请日:2018-06-21
Applicant: Samsung Electronics Co. Ltd.
Inventor: Jae-Yun Lee , Joon Soo Kwon , Byung Soo Kim , Sang-Soo Park , Il Han Park , Jong-Hoon Lee
IPC: G11C16/12 , H03K5/135 , G11C16/16 , G11C16/32 , G11C8/08 , G11C16/08 , H03K3/011 , G11C16/30 , G11C5/14 , G11C7/22 , G11C16/04
Abstract: A memory device can include: a memory cell array including a memory cell and a word line that is connected to the memory cell; a clock generator configured to generate a first pumping clock signal from a system clock signal; a charge pump configured to provide a pumping voltage signal using a power supply voltage and the first pumping clock signal; a compensation circuit configured to compensate for variations in a first reference clock signal in accordance with variations in the power supply voltage, and provide a compensated first reference clock signal; and a pass/fail (P/F) determining circuit configured to determine whether the word line is defective by comparing the first pumping clock signal and the compensated first reference clock signal while the pumping voltage signal is provided to the word line.
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公开(公告)号:USD757741S1
公开(公告)日:2016-05-31
申请号:US29477136
申请日:2013-12-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer: Jong-Hoon Lee , Bo-Ran Lee , Sang-Hee Bae , Gu-Hyun Yang , Jae-Youn Jeong
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公开(公告)号:USD755837S1
公开(公告)日:2016-05-10
申请号:US29477087
申请日:2013-12-19
Applicant: Samsung Electronics Co., Ltd.
Designer: Bo-Ran Lee , Jae-Youn Jeong , Gu-Hyun Yang , Jung-Ah Seung , Jong-Hoon Lee
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公开(公告)号:USD754748S1
公开(公告)日:2016-04-26
申请号:US29477103
申请日:2013-12-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer: Jae-Youn Jeong , Bo-Ran Lee , Jung-Ah Seung , Gu-Hyun Yang , Jong-Hoon Lee
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公开(公告)号:USD754737S1
公开(公告)日:2016-04-26
申请号:US29479830
申请日:2014-01-21
Applicant: Samsung Electronics Co., Ltd.
Designer: Jae-Youn Jeong , Jong-Hoon Lee , Gu-Hyun Yang
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公开(公告)号:USD748672S1
公开(公告)日:2016-02-02
申请号:US29477079
申请日:2013-12-19
Applicant: Samsung Electronics Co., Ltd.
Designer: Jae-Youn Jeong , Bo-Ran Lee , Jung-Ah Seung , Gu-Hyun Yang , Jong-Hoon Lee
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公开(公告)号:US11861237B2
公开(公告)日:2024-01-02
申请号:US17828362
申请日:2022-05-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doo Hyun Kim , Jong-Hoon Lee
IPC: G06F3/00 , G06F3/06 , G11C16/34 , G11C16/14 , G11C16/10 , G06F7/544 , G06N3/04 , G11C16/26 , G11C16/04
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0679 , G06F7/5443 , G06N3/04 , G11C16/10 , G11C16/14 , G11C16/26 , G11C16/349 , G11C16/0483
Abstract: A storage device includes a nonvolatile memory device having a plurality of memory cells and a storage controller. Each memory cell is set to one of a plurality of memory cell states, wherein distinct subsets of the memory cell states are associated with one of a plurality of data sets. The storage controller accesses data stored in one of the memory cells in a first state, performs a multiplier-accumulator (MAC) operation on the data, and sets the one memory cell to a second state corresponding to a result of the MAC operation to perform an in-place update.
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公开(公告)号:US20220291872A1
公开(公告)日:2022-09-15
申请号:US17828362
申请日:2022-05-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Doo Hyun Kim , Jong-Hoon Lee
Abstract: A storage device includes a nonvolatile memory device having a plurality of memory cells and a storage controller. Each memory cell is set to one of a plurality of memory cell states, wherein distinct subsets of the memory cell states are associated with one of a plurality of data sets. The storage controller accesses data stored in one of the memory cells in a first state, performs a multiplier-accumulator (MAC) operation on the data, and sets the one memory cell to a second state corresponding to a result of the MAC operation to perform an in-place update.
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公开(公告)号:US10161548B2
公开(公告)日:2018-12-25
申请号:US15187946
申请日:2016-06-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jung-Jae Kim , Jong-Hoon Lee , Jung-Kook Hwang
Abstract: A pipe coupler may include a first coupling member and a second coupling member. The first coupling member may be configured to hold a portion of a first pipe. The second coupling member may be configured to hold a portion of a second pipe coupled to the first pipe. The first coupling member and the second coupling member may be coupled to each other to connect the first pipe to the second pipe in a direction substantially perpendicular to a coaxis of the coupled first and second pipes. Thus, a leakage of the fluid through a combining portion between the first and second coupling members may be suppressed.
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