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公开(公告)号：US20100068867A1
公开(公告)日：2010-03-18
申请号：US12557809
申请日：2009-09-11
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76256
摘要： A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
摘要翻译： 通过在具有指定晶片面的有源层硅晶片上的氧离子注入步骤的方法制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。
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公开(公告)号：US08003494B2
公开(公告)日：2011-08-23
申请号：US12676874
申请日：2008-08-06
IPC分类号： H01L21/46
CPC分类号： H01L21/26533 , H01L21/76243 , H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
摘要翻译： 在通过粘合用于有源层的晶片和用于支撑层的晶片并且使根据本发明的有源层的晶片变薄的方法来制造接合晶片的方法中，在保持温度的状态下将氧离子注入用于有源层的晶片 的活性层的晶片在5×10 15〜5×10 16原子/ cm 2的剂量下在200℃以下，由此可以获得在变薄后的厚度均匀性优异并且显着改善表面粗糙度的接合晶片。
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公开(公告)号：US07927957B2
公开(公告)日：2011-04-19
申请号：US12557809
申请日：2009-09-11
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/187 , H01L21/76256
摘要： A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
摘要翻译： 通过包括氧离子注入步骤的方法在具有指定晶片面的有源层的硅晶片上制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。
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公开(公告)号：US20090186464A1
公开(公告)日：2009-07-23
申请号：US12321725
申请日：2009-01-22
IPC分类号： H01L21/30
CPC分类号： H01L21/26506 , H01L21/304 , H01L21/30608 , H01L21/30625 , H01L21/6835 , H01L21/76243 , H01L21/76254 , H01L2221/68363
摘要： In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditions.
摘要翻译： 在通过将活性层用晶片与支撑层用晶片接合而制造接合晶片的方法中，将活性层用晶片进行稀释时，将氧离子注入有源层用晶片时，将注入工序分为两个阶段 在规定条件下进行。
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公开(公告)号：US20070298589A1
公开(公告)日：2007-12-27
申请号：US11811070
申请日：2007-06-07
IPC分类号： H01L21/30
CPC分类号： H01L21/26506 , H01L21/26533 , H01L21/76254
摘要： There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.
摘要翻译： 提供了一种通过将用于有源层和支撑层的两个硅晶片彼此粘合然后使用于活性层的晶片的表面注入氮离子的有源层的晶片变薄来形成接合晶片的方法，以形成 在接合之前用于有源层的晶片内部的氮化物层。
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公开(公告)号：US20100248447A1
公开(公告)日：2010-09-30
申请号：US12676874
申请日：2008-08-06
IPC分类号： H01L21/30
CPC分类号： H01L21/26533 , H01L21/76243 , H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
摘要翻译： 在通过粘合用于有源层的晶片和用于支撑层的晶片并且使根据本发明的有源层的晶片变薄的方法来制造接合晶片的方法中，在保持温度的状态下将氧离子注入用于有源层的晶片 的活性层的晶片在5×10 15〜5×10 16原子/ cm 2的剂量下在200℃以下，由此可以获得在变薄后的厚度均匀性优异并且显着改善表面粗糙度的接合晶片。
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17.发明申请公开(公告)号：US20070048971A1
公开(公告)日：2007-03-01
申请号：US11466964
申请日：2006-08-24
IPC分类号： H01L21/30
CPC分类号： H01L21/762 , H01L21/76254 , H01L21/76256 , H01L27/1203
摘要： Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 Ωcm.
摘要翻译： 在层叠基板制造过程中由于静电积聚引起的颗粒的粘附受到限制，从而减少层压步骤中的空隙或泡罩的产生并提高产量。 通过将作为有源层的第一半导体基板11经由氧化膜11a叠加在作为支撑基板的第二半导体基板12上而形成层叠体13。 叠加之前的第一和第二半导体衬底11和12中的任一个或两者的电阻为0.005-0.2欧姆。
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公开(公告)号：US20090117708A1
公开(公告)日：2009-05-07
申请号：US11933882
申请日：2007-11-01
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate includes steps of forming a first oxide film on a surface of a first silicon substrate; implanting hydrogen ions into the surface of the first silicon substrate on which the first oxide film is formed to form an ion implant region inside the first silicon substrate; removing the entire or the portion of first oxide film; forming a laminate by bonding the second silicon substrate to a hydrogen ion-implanted surface of the first silicon substrate with the first oxide film, or second oxide film formed on a surface of the second silicon substrate, or the first oxide film and second oxide film, interposed therebetween; and subjecting the laminate to a heat treatment at a predetermined temperature to separate the first silicon substrate along the ion implant region, thereby obtaining an SOI substrate including a thin SOI layer formed on the second silicon substrate with the oxide film interposed therebetween. The method can reduce a degree of contamination from heavy metals inside the SOI substrate.
摘要翻译： SOI衬底的制造方法包括在第一硅衬底的表面上形成第一氧化膜的步骤; 将氢离子注入到其上形成有第一氧化膜的第一硅衬底的表面中以在第一硅衬底内部形成离子注入区; 去除第一氧化膜的全部或部分; 通过将第二硅衬底与形成在第二硅衬底的表面上的第一氧化物膜或第二氧化物膜的第一硅衬底的氢离子注入表面接合，或者将第一氧化物膜和第二氧化物膜 ; 以及在预定温度下对层压体进行热处理以沿离子注入区分离第一硅衬底，从而获得SOI衬底，其包括在第二硅衬底上形成的薄SOI层，其间插入有氧化膜。 该方法可以降低SOI衬底内重金属的污染程度。
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公开(公告)号：US07563697B2
公开(公告)日：2009-07-21
申请号：US10570353
申请日：2004-09-03
IPC分类号： H01L21/322
CPC分类号： H01L21/3247 , H01L21/76254
摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.
摘要翻译： 通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。 将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。 随后，将由此获得的SOI晶片在氩气气氛中进行热处理。 之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。 因此，SOI晶片的表面被再结晶，从而平坦化。
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公开(公告)号：US20090023269A1
公开(公告)日：2009-01-22
申请号：US10570353
申请日：2004-09-03
IPC分类号： H01L21/762
CPC分类号： H01L21/3247 , H01L21/76254
摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.
摘要翻译： 通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。 将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。 随后，将由此获得的SOI晶片在氩气气氛中进行热处理。 之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。 因此，SOI晶片的表面被再结晶，从而平坦化。
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