MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    11.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号:US20150255348A1

    公开(公告)日:2015-09-10

    申请号:US14717055

    申请日:2015-05-20

    Abstract: The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.

    Abstract translation: 本发明的目的是在短时间内进行剥离处理。 在剥离层暴露于蚀刻气体的气氛的同时进行剥离。 或者,在蚀刻气体的气氛中将用于剥离层的蚀刻气体吹向剥离层的同时进行剥离。 具体地说,将蚀刻气体吹向待剥离的部分,同时从基板上撕下被剥离层。 或者,在用于剥离层的蚀刻剂中进行剥离,同时向剥离层供给蚀刻剂。

    Information Retrieval System And Information Retrieval Method

    公开(公告)号:US20230334097A1

    公开(公告)日:2023-10-19

    申请号:US18030196

    申请日:2021-09-28

    CPC classification number: G06F16/90335 G06F2216/11

    Abstract: An information retrieval system that is capable of retrieving a similar application and value information of the similar application for a designated application is provided. An information retrieval system is provided that receives a designated application, calculates a first degree of similarity between a specification of the designated application and each of specifications of a plurality of applications, extracts a plurality of first similar applications from the plurality of applications on the basis of the first degree of similarity, calculates a second degree of similarity between a support drawing corresponding to the scope of claims of at least one of the plurality of first similar applications and at least one drawing of the designated application, extracts at least one drawing similar to the support drawing of at least one of the plurality of first similar applications from the drawings of designated application on the basis of the second degree of similarity, and outputs value information, the support drawing, and the similar drawing for at least one of the plurality of first similar applications. Related product information or the like can be given as the value information.

    Light-Emitting Device and Manufacturing Method Thereof
    14.
    发明申请
    Light-Emitting Device and Manufacturing Method Thereof 有权
    发光装置及其制造方法

    公开(公告)号:US20140175469A1

    公开(公告)日:2014-06-26

    申请号:US14109043

    申请日:2013-12-17

    CPC classification number: H01L33/005 H01L27/3211 H01L27/3246

    Abstract: Occurrence of a crosstalk phenomenon is prevented in a light-emitting device including a tandem element. The light-emitting device includes an insulating layer, a first lower electrode over the insulating layer, a second lower electrode over the insulating layer, a partition positioned over the insulating layer and between the first lower electrode and the second lower electrode, a first light-emitting unit over the first lower electrode, the partition, and the second lower electrode, intermediate layers over the first light-emitting unit, a second light-emitting unit over the intermediate layer, and an upper electrode over the second light-emitting unit. The partition has a first depression.

    Abstract translation: 在包括串联元件的发光装置中,防止发生串扰现象。 发光装置包括绝缘层,绝缘层上的第一下部电极,绝缘层上的第二下部电极,位于绝缘层上方以及位于第一下部电极和第二下部电极之间的隔板,第一光 在第一下电极,隔板和第二下电极之上的第一发光单元,在第一发光单元上方的中间层,中间层上的第二发光单元,以及在第二发光单元上方的上电极 。 分区有第一个凹陷。

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