摘要:
A polymer actuator containing graphene and a method of preparing the same are provided. The polymer actuator includes an ion-conductive polymer membrane, a metal electrode disposed on both surfaces of the ion-conductive polymer membrane, and graphene dispersed within the ion-conductive polymer membrane. As the graphene is dispersed within the polymer membrane, reverse ion migration due to an osmotic pressure occurring after solvent migration caused by electrostimulation in operation of the actuator can be prevented, and thus drivability of the polymer actuator can be improved.
摘要:
Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.
摘要:
Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.
摘要:
Provided are a structure and operating method of a semiconductor gas sensor having low power consumption. The semiconductor gas sensor is adapted to adsorb gas to a low-dimensional semiconductor nanomaterial at room temperature, output a change in resistance of the low-dimensional semiconductor nanomaterial, apply power to a heater, desorb the gas adsorbed to the low-dimensional semiconductor nanomaterial, and return the resistance of the low-dimensional semiconductor nanomaterial back to initial resistance. The semiconductor gas sensor senses the gas at room temperature using the low-dimensional semiconductor nanomaterial having a high-sensitivity characteristic at room temperature, and drives the heater only when the adsorbed gas is desorbed. Thereby, it is possible to improve a gas sensing characteristic, reduce power consumption, and provide a rapid response speed.
摘要:
A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.
摘要:
Disclosed are a MEMS microphone and a method of manufacturing the same. The MEMS microphone includes: a substrate; a rear acoustic chamber formed inside a front surface of the substrate; a vibrating plate formed on the substrate and having an exhaust hole; a fixed electrode formed on the vibrating plate; and a fixed electrode support supported by a bottom of the rear acoustic chamber and connected to the fixed electrode through the exhaust hole.
摘要:
A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.
摘要:
Provided is an active piezoelectric energy harvester, which can control a direct current voltage applied to an embedded variable capacitance layer to precisely adjust a resonance frequency in real time, and thus achieve a simpler structure and a smaller size compared to a conventional one that adjusts the resonance frequency using a separate variable capacitor provided outside. Further, the active piezoelectric energy harvester can precisely adjust the resonance frequency even when the frequency of vibration varies over time as in a real natural vibration environment or when it is degraded to undergo a variation in its own resonance frequency, and thus can continuously maintain optimal energy conversion characteristics.
摘要:
Provided are a piezoelectric energy harvester and a method of manufacturing the same. The piezoelectric energy harvester is configured to obtain primary voltage from a piezoelectric layer vibrated to generate voltage and secondary voltage from a magnetostrictive layer vibrated to induce a change in magnetic field and a coil surrounding the magnetostrictive layer. Thus, it is possible to obtain sufficient voltage to drive a power conditioning circuit (PCC).
摘要:
Provided is an optical microscope system for detecting nanowires that is designed with a rotational polarizer and Fast Fourier Transform (FFT) to allow for use of an existing optical microscope in fabricating an electronic device having the nanowires. The optical microscope system includes: a light source for emitting light to provide the light to a nanowire sample; a rotational polarizer provided on a path of the light emitted from the light source for polarizing the light; an optical microscope for detecting a nanowire image using light that is polarized by the rotational polarizer and incident on the nanowire sample; a CCD camera provided in a region of the optical microscope for photographing and storing the nanowire image detected by the optical microscope; and a data processor for performing Fast Fourier Transform (FFT) on the nanowire image stored in the CCD camera. Intensity of reflected light varies, due to optical anisotropy of the nanowires, along a polarizing orientation of light incident on the nanowires. It is possible to obtain a distinct image of the nanowires having a nanometer line width by performing FFT on each pixel of reflected light images obtained at predetermined time intervals after light passing through the polarizer rotating in a predetermined period is incident on the nanowires.