POLYMER ACTUATOR CONTAINING GRAPHENE AND METHOD OF PREPARING THE SAME
    11.
    发明申请
    POLYMER ACTUATOR CONTAINING GRAPHENE AND METHOD OF PREPARING THE SAME 审中-公开
    包含石墨的聚合物致动器及其制备方法

    公开(公告)号:US20110133607A1

    公开(公告)日:2011-06-09

    申请号:US12861726

    申请日:2010-08-23

    IPC分类号: H01L41/193 H01L41/26

    CPC分类号: F03G7/005 Y10T29/42

    摘要: A polymer actuator containing graphene and a method of preparing the same are provided. The polymer actuator includes an ion-conductive polymer membrane, a metal electrode disposed on both surfaces of the ion-conductive polymer membrane, and graphene dispersed within the ion-conductive polymer membrane. As the graphene is dispersed within the polymer membrane, reverse ion migration due to an osmotic pressure occurring after solvent migration caused by electrostimulation in operation of the actuator can be prevented, and thus drivability of the polymer actuator can be improved.

    摘要翻译: 提供了含有石墨烯的聚合物致动器及其制备方法。 聚合物致动器包括离子导电聚合物膜,设置在离子传导聚合物膜的两个表面上的金属电极和分散在离子导电聚合物膜内的石墨烯。 当石墨烯分散在聚合物膜中时,可以防止由于在致动器的操作中由电刺激引起的溶剂迁移之后发生的渗透压引起的反向离子迁移,从而可以提高聚合物致动器的驾驶性能。

    Method of fabricating nano-wire array
    12.
    发明授权
    Method of fabricating nano-wire array 失效
    制造纳米线阵列的方法

    公开(公告)号:US07846786B2

    公开(公告)日:2010-12-07

    申请号:US11927881

    申请日:2007-10-30

    摘要: Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

    摘要翻译: 提供一种制造纳米线阵列的方法,包括以下步骤:在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域,然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线,其间插入图案化的纳米线; 形成多个漏电极,所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个,并且形成多个源电极,所述多个源电极的一端连接到所述源电极线并接触所述纳米线, 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域,以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此,即使在纳米线与电极线的不平行结构中,大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。

    METHOD OF FABRICATING NANO-WIRE ARRAY
    13.
    发明申请
    METHOD OF FABRICATING NANO-WIRE ARRAY 失效
    制作纳米线阵列的方法

    公开(公告)号:US20080233675A1

    公开(公告)日:2008-09-25

    申请号:US11927881

    申请日:2007-10-30

    IPC分类号: H01L21/00

    摘要: Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

    摘要翻译: 提供一种制造纳米线阵列的方法,包括以下步骤:在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域,然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线,其间插入图案化的纳米线; 形成多个漏电极,所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个,并且形成多个源电极,所述多个源电极的一端连接到所述源电极线并接触所述纳米线, 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域,以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此,即使在纳米线与电极线的不平行结构中,大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。

    SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION
    14.
    发明申请
    SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION 审中-公开
    具有低功耗的半导体气体传感器

    公开(公告)号:US20110138882A1

    公开(公告)日:2011-06-16

    申请号:US12965433

    申请日:2010-12-10

    CPC分类号: G01N27/12

    摘要: Provided are a structure and operating method of a semiconductor gas sensor having low power consumption. The semiconductor gas sensor is adapted to adsorb gas to a low-dimensional semiconductor nanomaterial at room temperature, output a change in resistance of the low-dimensional semiconductor nanomaterial, apply power to a heater, desorb the gas adsorbed to the low-dimensional semiconductor nanomaterial, and return the resistance of the low-dimensional semiconductor nanomaterial back to initial resistance. The semiconductor gas sensor senses the gas at room temperature using the low-dimensional semiconductor nanomaterial having a high-sensitivity characteristic at room temperature, and drives the heater only when the adsorbed gas is desorbed. Thereby, it is possible to improve a gas sensing characteristic, reduce power consumption, and provide a rapid response speed.

    摘要翻译: 提供具有低功耗的半导体气体传感器的结构和操作方法。 半导体气体传感器适于在室温下将气体吸附到低维半导体纳米材料上,输出低维半导体纳米材料的电阻变化,向加热器施加电力,解吸吸附在低维半导体纳米材料上的气体 ,并将低维半导体纳米材料的电阻恢复到初始电阻。 半导体气体传感器使用在室温下具有高灵敏度特性的低维半导体纳米材料在室温下感测气体,仅在吸附气体解吸时驱动加热器。 由此,能够提高气体感测特性,降低功耗,提供快速的响应速度。

    Acoustic sensor and fabrication method thereof
    15.
    发明授权
    Acoustic sensor and fabrication method thereof 有权
    声传感器及其制造方法

    公开(公告)号:US09066184B2

    公开(公告)日:2015-06-23

    申请号:US13557108

    申请日:2012-07-24

    IPC分类号: H04R31/00 H04R19/00 H04R19/04

    摘要: A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.

    摘要翻译: 根据本公开的示例性实施例的用于制造声学传感器的方法包括:通过在基板的上部形成下电极来形成声传感器单元,在下电极上形成蚀刻孔,在其上形成牺牲层 下部电极的上部,并且将隔膜连接到牺牲层的上部; 将声学传感器单元的基板的下部耦合到其上形成有声压输入孔的印刷电路板,以便通过声压输入孔将声学传感器单元的基板的下部暴露于外部 ; 将覆盖所述声学传感器单元的盖附着在所述印刷电路板上; 蚀刻声学传感器单元的基板以形成声学室; 并去除牺牲层。

    ACOUSTIC SENSOR AND FABRICATION METHOD THEREOF
    17.
    发明申请
    ACOUSTIC SENSOR AND FABRICATION METHOD THEREOF 有权
    声学传感器及其制造方法

    公开(公告)号:US20130100779A1

    公开(公告)日:2013-04-25

    申请号:US13557108

    申请日:2012-07-24

    IPC分类号: H04R17/00 H04R31/00

    摘要: A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.

    摘要翻译: 根据本公开的示例性实施例的用于制造声学传感器的方法包括:通过在基板的上部形成下电极来形成声传感器单元,在下电极上形成蚀刻孔,在其上形成牺牲层 下部电极的上部,并且将隔膜连接到牺牲层的上部; 将声学传感器单元的基板的下部耦合到其上形成有声压输入孔的印刷电路板,以便通过声压输入孔将声学传感器单元的基板的下部暴露于外部 ; 将覆盖所述声学传感器单元的盖附着在所述印刷电路板上; 蚀刻声学传感器单元的基板以形成声学室; 并去除牺牲层。

    Active piezoelectric energy harvester with embedded variable capacitance layer and method of manufacturing the same
    18.
    发明授权
    Active piezoelectric energy harvester with embedded variable capacitance layer and method of manufacturing the same 有权
    具有嵌入式可变电容层的有源压电能量收集器及其制造方法

    公开(公告)号:US08471439B2

    公开(公告)日:2013-06-25

    申请号:US12899499

    申请日:2010-10-06

    IPC分类号: H02N2/18

    摘要: Provided is an active piezoelectric energy harvester, which can control a direct current voltage applied to an embedded variable capacitance layer to precisely adjust a resonance frequency in real time, and thus achieve a simpler structure and a smaller size compared to a conventional one that adjusts the resonance frequency using a separate variable capacitor provided outside. Further, the active piezoelectric energy harvester can precisely adjust the resonance frequency even when the frequency of vibration varies over time as in a real natural vibration environment or when it is degraded to undergo a variation in its own resonance frequency, and thus can continuously maintain optimal energy conversion characteristics.

    摘要翻译: 提供了一种有源压电能量收集器,其可以控制施加到嵌入式可变电容层的直流电压,以实时精确地调节谐振频率,从而实现比传统调节器的常规电路更简单的结构和更小的尺寸 谐振频率使用外部提供的单独的可变电容器。 此外,即使在真实的自然振动环境中,随着时间的推移,振动频率随时间而变化,或者当其自身的谐振频率变差而发生变化时,有源压电能量收集器也可以精确地调节谐振频率,从而可以持续保持最佳 能量转换特性。

    Optical microscope system for detecting nanowires using polarizer and fast fourier transform
    20.
    发明申请
    Optical microscope system for detecting nanowires using polarizer and fast fourier transform 失效
    用于使用偏振器和快速傅里叶变换检测纳米线的光学显微镜系统

    公开(公告)号:US20090195869A1

    公开(公告)日:2009-08-06

    申请号:US11940379

    申请日:2007-11-15

    IPC分类号: G02B21/06 G06K9/00

    摘要: Provided is an optical microscope system for detecting nanowires that is designed with a rotational polarizer and Fast Fourier Transform (FFT) to allow for use of an existing optical microscope in fabricating an electronic device having the nanowires. The optical microscope system includes: a light source for emitting light to provide the light to a nanowire sample; a rotational polarizer provided on a path of the light emitted from the light source for polarizing the light; an optical microscope for detecting a nanowire image using light that is polarized by the rotational polarizer and incident on the nanowire sample; a CCD camera provided in a region of the optical microscope for photographing and storing the nanowire image detected by the optical microscope; and a data processor for performing Fast Fourier Transform (FFT) on the nanowire image stored in the CCD camera. Intensity of reflected light varies, due to optical anisotropy of the nanowires, along a polarizing orientation of light incident on the nanowires. It is possible to obtain a distinct image of the nanowires having a nanometer line width by performing FFT on each pixel of reflected light images obtained at predetermined time intervals after light passing through the polarizer rotating in a predetermined period is incident on the nanowires.

    摘要翻译: 提供了一种用于检测纳米线的光学显微镜系统,其被设计为具有旋转偏振器和快速傅里叶变换(FFT),以允许使用现有的光学显微镜来制造具有纳米线的电子器件。 光学显微镜系统包括:用于发射光以向纳米线样品提供光的光源; 设置在从光源发射的光的路径上以使光偏振的旋转偏振器; 光学显微镜,用于使用被旋转偏振器偏振并入射在纳米线样品上的光检测纳米线图像; 设置在光学显微镜的区域中的CCD照相机,用于拍摄和存储由光学显微镜检测的纳米线图像; 以及用于在存储在CCD照相机中的纳米线图像上执行快速傅里叶变换(FFT)的数据处理器。 反射光的强度由于纳米线的光学各向异性而沿着入射在纳米线上的光的偏振方向而变化。 通过在经过预定时间内旋转的偏振片的光入射到纳米线上之后,以预定时间间隔获得的反射光图像的每个像素执行FFT,可以获得具有纳米线宽度的纳米线的不同图像。