公开(公告)号：US07736963B2

公开(公告)日：2010-06-15

申请号：US11175569

申请日：2005-07-05

申请人： Woong Lee ,  Young-Sub You ,  Hun-Hyeoung Leam ,  Yong-Woo Hyung ,  Jai-Dong Lee ,  Ki-Su Na ,  Jung-Hwan Kim

发明人： Woong Lee ,  Young-Sub You ,  Hun-Hyeoung Leam ,  Yong-Woo Hyung ,  Jai-Dong Lee ,  Ki-Su Na ,  Jung-Hwan Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L21/28247 ,  H01L27/11568 ,  H01L29/4933

摘要： In an embodiment, a method of forming a gate structure for a semiconductor device includes forming a preliminary gate structure on a semiconductor substrate. The preliminary gate structure includes a gate oxide pattern and a conductive pattern sequentially stacked on the substrate. Then, a re-oxidation process is performed to the substrate having the preliminary gate structure using an oxygen radical including at least one oxygen atom, so that an oxide layer is formed on a surface of the substrate and sidewalls of the preliminary gate structure to form the gate structure for a semiconductor device. The thickness of the gate oxide pattern is prevented from increasing, and the quality of the oxide layer is improved.

摘要翻译： 在一个实施例中，形成用于半导体器件的栅极结构的方法包括在半导体衬底上形成初步栅极结构。 预栅极结构包括依次层叠在基板上的栅极氧化物图案和导电图案。 然后，使用包含至少一个氧原子的氧自由基对具有预选择门结构的基板进行再氧化处理，从而在基板的表面和预选择门结构的侧壁上形成氧化物层，形成 半导体器件的栅极结构。 防止栅极氧化物图案的厚度增加，并且提高氧化物层的质量。

公开(公告)号：US07629217B2

公开(公告)日：2009-12-08

申请号：US11107529

申请日：2005-04-15

申请人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Young-Seok Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee

IPC分类号： H01L21/8242

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： In a method of manufacturing a floating gate of a non-volatile semiconductor memory, a pattern is formed on a substrate to have an opening that exposes a portion of the substrate. A first preliminary polysilicon layer is formed on the pattern and the exposed portion of the substrate to substantially fill the opening. A first polysilicon layer is formed by partially etching the first preliminary polysilicon layer until a first void formed in the first preliminary polysilicon layer is exposed. A second polysilicon layer is formed on the first polysilicon layer.

摘要翻译： 在制造非易失性半导体存储器的浮置栅极的方法中，在衬底上形成图案以具有露出衬底的一部分的开口。 在图案和基板的暴露部分上形成第一初步多晶硅层以基本上填充开口。 通过部分地蚀刻第一初步多晶硅层直到形成在第一初步多晶硅层中的第一空穴露出来形成第一多晶硅层。 在第一多晶硅层上形成第二多晶硅层。

公开(公告)号：US07223657B2

公开(公告)日：2007-05-29

申请号：US11240234

申请日：2005-09-30

申请人： Won-Jun Jang ,  Jung-Hwan Kim ,  Jai-Dong Lee ,  Young-sub You ,  Sang-Hun Lee ,  Hun-Hyeoung Leam

发明人： Won-Jun Jang ,  Jung-Hwan Kim ,  Jai-Dong Lee ,  Young-sub You ,  Sang-Hun Lee ,  Hun-Hyeoung Leam

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： Methods of fabricating a floating gate of a flash memory cell are provided in which a first polysilicon layer is formed between first and second isolation layers. An upper region of the first polysilicon layer is then oxidized. The oxidized upper region of the first polysilicon layer is subsequently removed. A second polysilicon layer is formed on the first polysilicon layer. The second polysilicon layer and the first polysilicon layer are patterned to form the floating gate.

摘要翻译： 提供了制造闪存单元的浮动栅极的方法，其中在第一和第二隔离层之间形成第一多晶硅层。 然后第一多晶硅层的上部区域被氧化。 随后去除第一多晶硅层的氧化的上部区域。 在第一多晶硅层上形成第二多晶硅层。 图案化第二多晶硅层和第一多晶硅层以形成浮栅。

公开(公告)号：US20060068547A1

公开(公告)日：2006-03-30

申请号：US11178709

申请日：2005-07-11

申请人： Sang-Hoon Lee ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Jung-Hwan Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee ,  Yong-Sun Lee ,  Won-Jun Jang

发明人： Sang-Hoon Lee ,  Hun-Hyeoung Leam ,  Jai-Dong Lee ,  Jung-Hwan Kim ,  Young-Sub You ,  Ki-Su Na ,  Woong Lee ,  Yong-Sun Lee ,  Won-Jun Jang

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521 ,  Y10S438/978

摘要： A method of forming a floating gate of a non-volatile memory device can include etching a mask pattern formed between field isolation regions in a field isolation pattern on a substrate to recess a surface of the mask pattern below an upper surface of adjacent field isolation regions to form an opening having a width defined by a side wall of the adjacent field isolation regions above the surface. Then the adjacent field isolation regions is etched to increase the width of the opening.

摘要翻译： 形成非易失性存储器件的浮置栅极的方法可以包括在衬底上的场隔离图案中蚀刻在场隔离区域之间形成的掩模图案，以将掩模图案的表面凹陷在相邻场隔离区域的上表面之下 以形成具有由表面上方的相邻场隔离区域的侧壁限定的宽度的开口。 然后蚀刻相邻的场隔离区域以增加开口的宽度。

公开(公告)号：US20070010068A1

公开(公告)日：2007-01-11

申请号：US11481928

申请日：2006-07-07

申请人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

发明人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/32105 ,  H01L21/28273 ,  H01L29/42324

摘要： Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中，可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤，以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺，从而将氧气提供到 半导体衬底，同时将温度从第一温度升至第二温度，以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

公开(公告)号：US07153362B2

公开(公告)日：2006-12-26

申请号：US10134434

申请日：2002-04-30

申请人： Chang-Hyun Ko ,  Jai-Dong Lee ,  Jin-Hee Lee

发明人： Chang-Hyun Ko ,  Jai-Dong Lee ,  Jin-Hee Lee

IPC分类号： C30B23/00

CPC分类号： C23C16/52

摘要： A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of reaction product is compared with a reference amount, and a comparison result is fed back in real time to adjust a supply of one or more reactants. The system and method provide real time control over the deposition process and/or reduce the number of wafers produced that do not meet processing target values.

公开(公告)号：US07592227B2

公开(公告)日：2009-09-22

申请号：US11481928

申请日：2006-07-07

申请人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

发明人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

IPC分类号： H01L21/336

CPC分类号： H01L21/32105 ,  H01L21/28273 ,  H01L29/42324

摘要： Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中，可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤，以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺，从而将氧气提供到 半导体衬底，同时将温度从第一温度升至第二温度，以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

公开(公告)号：US07007933B2

公开(公告)日：2006-03-07

申请号：US10431981

申请日：2003-05-08

申请人： Jai-Dong Lee ,  Ki-Hyun Hwang ,  Chang-Hyun Ko

发明人： Jai-Dong Lee ,  Ki-Hyun Hwang ,  Chang-Hyun Ko

IPC分类号： B01F3/04

CPC分类号： C23C16/4482 ,  Y10S261/65

摘要： A method for supplying a source gas to a processing chamber for forming a film on a substrate in the processing chamber includes: heating a carrier gas; bubbling the heated carrier gas in a liquid source disposed in a container to form a vapor source; and supplying a source gas including the vapor source and the heated carrier gas into the processing chamber for forming the film.

摘要翻译： 将源气体供给到处理室中的基板上形成膜的处理室的方法包括：对载气进行加热; 将加热的载气鼓泡在设置在容器中的液体源中以形成蒸气源; 以及将包括蒸气源和被加热的载气的源气体供应到用于形成膜的处理室中。

公开(公告)号：US07361560B2

公开(公告)日：2008-04-22

申请号：US11033156

申请日：2005-01-12

申请人： Jai-Dong Lee ,  Ki-Chul Kim ,  In-Wook Cho

发明人： Jai-Dong Lee ,  Ki-Chul Kim ,  In-Wook Cho

IPC分类号： H01L21/336

CPC分类号： H01L21/022 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3144 ,  H01L27/11568 ,  H01L29/66833

摘要： A method for manufacturing a dielectric layer structure for a non-volatile memory cell is provided. A method includes forming a first dielectric layer for tunneling on a semiconductor substrate, a second dielectric layer on the first dielectric layer to store charges, nitrogenizing surface of the second dielectric layer, and forming a third dielectric layer the nitridedsecond dielectric layer.

摘要翻译： 提供一种用于制造用于非易失性存储单元的电介质层结构的方法。 一种方法包括形成用于在半导体衬底上隧穿的第一电介质层，在第一电介质层上形成第二电介质层以存储电荷，使第二电介质层的氮化表面，以及形成第三介电层氮化二次介电层。

公开(公告)号：US20050153514A1

公开(公告)日：2005-07-14

申请号：US11033156

申请日：2005-01-12

申请人： Jai-Dong Lee ,  Ki-Chul Kim ,  In-Wook Cho

发明人： Jai-Dong Lee ,  Ki-Chul Kim ,  In-Wook Cho

IPC分类号： H01L27/115 ,  H01L21/314 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/3205 ,  H01L21/31

CPC分类号： H01L21/022 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3144 ,  H01L27/11568 ,  H01L29/66833

摘要： A method for manufacturing a dielectric layer structure for a non-volatile memory cell is provided. A method includes forming a first dielectric layer for tunneling on a semiconductor substrate, a second dielectric layer on the first dielectric layer to store charges, nitrogenizing surface of the second dielectric layer, and forming a third dielectric layer the nitridedsecond dielectric layer.

摘要翻译： 提供一种用于制造用于非易失性存储单元的电介质层结构的方法。 一种方法包括形成用于在半导体衬底上隧穿的第一电介质层，在第一电介质层上形成第二电介质层以存储电荷，使第二电介质层的氮化表面，以及形成第三介电层氮化二次介电层。