公开(公告)号：US07514739B2

公开(公告)日：2009-04-07

申请号：US11687942

申请日：2007-03-19

Applicant: Young-Sam Park ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Seung-Jin Yang

Inventor： Young-Sam Park ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Seung-Jin Yang

IPC: H01L29/76 ,  H01L29/788

CPC classification number: H01L29/7854 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7881

Abstract: A stack-type nonvolatile semiconductor device comprises a memory device formed on a substrate including a semiconductor body elongated in one direction, having a cross section perpendicular to a main surface, having a predetermined curvature, a channel region on the semiconductor body along the circumference, a tunneling insulating layer on the channel region, a floating gate on the tunneling insulating layer, insulated from the channel region, a high dielectric constant material layer on the floating gate, a metallic control gate on the high dielectric constant material layer, insulated from the floating gate, and source and drain regions adjacent to the metallic control gate on the semiconductor body, an inter-insulating layer on the memory device, and a conductive layer on the inter-insulating layer, and a memory device formed on the conductive layer including, a semiconductor body elongated in one direction having a cross section perpendicular to a main surface, having a predetermined curvature, a channel region along the circumference of the semiconductor body, a tunneling insulating layer on the channel region, a floating gate on the tunneling insulating layer, electrically insulated from the channel region, a high dielectric constant material layer on the floating gate, a metallic control gate on the high dielectric constant material layer, insulated from the floating gate, and source and drain regions adjacent to the metallic control gate.

Abstract translation: 堆叠型非易失性半导体器件包括：形成在基板上的存储器件，该存储器件包括在一个方向上延伸的半导体本体，具有垂直于主表面的横截面，具有预定曲率，半导体本体上沿着圆周的沟道区域， 沟道区域上的隧道绝缘层，与沟道区绝缘的隧道绝缘层上的浮动栅极，浮置栅极上的高介电常数材料层，高介电常数材料层上的金属控制栅极，绝缘层 浮置栅极，与半导体主体上的金属控制栅极相邻的源极和漏极区域，存储器件上的绝缘层和绝缘层上的导电层，以及形成在导电层上的存储器件，包括 具有垂直于主表面的横截面在一个方向上延伸的半导体本体，具有预制件 沿着半导体本体的圆周的通道区域，沟道区域上的隧道绝缘层，隧道绝缘层上的浮动栅极，与沟道区电绝缘，浮置栅极上的高介电常数材料层， 在高介电常数材料层上的金属控制栅极，与浮动栅极绝缘，以及与金属控制栅极相邻的源极和漏极区域。

公开(公告)号：US20070164344A1

公开(公告)日：2007-07-19

申请号：US11687942

申请日：2007-03-19

Applicant: Young-Sam Park ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Seung-Jin Yang

Inventor： Young-Sam Park ,  Seung-Beom Yoon ,  Jeong-Uk Han ,  Sung-Taeg Kang ,  Seung-Jin Yang

IPC: H01L29/76

CPC classification number: H01L29/7854 ,  H01L21/28273 ,  H01L29/42324 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7881

Abstract: A stack-type nonvolatile semiconductor device comprises a memory device formed on a substrate including a semiconductor body elongated in one direction, having a cross section perpendicular to a main surface, having a predetermined curvature, a channel region on the semiconductor body along the circumference, a tunneling insulating layer on the channel region, a floating gate on the tunneling insulating layer, insulated from the channel region, a high dielectric constant material layer on the floating gate, a metallic control gate on the high dielectric constant material layer, insulated from the floating gate, and source and drain regions adjacent to the metallic control gate on the semiconductor body, an inter-insulating layer on the memory device, and a conductive layer on the inter-insulating layer, and a memory device formed on the conductive layer including, a semiconductor body elongated in one direction having a cross section perpendicular to a main surface, having a predetermined curvature, a channel region along the circumference of the semiconductor body, a tunneling insulating layer on the channel region, a floating gate on the tunneling insulating layer, electrically insulated from the channel region, a high dielectric constant material layer on the floating gate, a metallic control gate on the high dielectric constant material layer, insulated from the floating gate, and source and drain regions adjacent to the metallic control gate.

Abstract translation: 堆叠型非易失性半导体器件包括：形成在基板上的存储器件，该存储器件包括在一个方向上延伸的半导体本体，具有垂直于主表面的横截面，具有预定曲率，半导体本体上沿着圆周的沟道区域， 沟道区域上的隧道绝缘层，与沟道区绝缘的隧道绝缘层上的浮动栅极，浮置栅极上的高介电常数材料层，高介电常数材料层上的金属控制栅极，绝缘层 浮置栅极，与半导体主体上的金属控制栅极相邻的源极和漏极区域，存储器件上的绝缘层和绝缘层上的导电层，以及形成在导电层上的存储器件，包括 具有垂直于主表面的横截面在一个方向上延伸的半导体本体，具有预制件 沿着半导体本体的圆周的通道区域，沟道区域上的隧道绝缘层，隧道绝缘层上的浮动栅极，与沟道区电绝缘，浮置栅极上的高介电常数材料层， 在高介电常数材料层上的金属控制栅极，与浮动栅极绝缘，以及与金属控制栅极相邻的源极和漏极区域。

公开(公告)号：US08956743B2

公开(公告)日：2015-02-17

申请号：US13284066

申请日：2011-10-28

Applicant: Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

Inventor： Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

IPC: H01M2/12 ,  H01M2/02

CPC classification number: H01M2/1229 ,  H01M2/0212 ,  H01M2/0287 ,  H01M2/1264

Abstract: Disclosed herein is a plate-shaped secondary battery constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case, and the battery case is sealed by thermal welding, wherein the secondary battery has at least one-way exhaust member, mounted at a sealed portion, formed at the outer circumference of an electrode assembly receiving part of the battery case, for allowing internal high-pressure gas to be exhausted out of a battery cell and preventing external gas from being introduced into the battery cell. The secondary battery according to the present invention has the effect of effectively exhausting internal high-pressure gas generated during the abnormal operation of the battery, such as overcharge, out of the battery case, while maintaining the sealability of the battery case, thereby simultaneously improving the efficiency and safety of the battery.

Abstract translation: 这里公开了一种板状二次电池，其结构是将阴极/隔板/阳极结构的电极组件安装在电池壳体中，并且电池壳体通过热焊接而被密封，其中二次电池具有至少 单向排气构件，安装在密封部分处，形成在电池组件的电极组件接收部分的外周，用于允许内部高压气体从电池单元排出并防止外部气体被引入 进入电池单元。 根据本发明的二次电池具有在保持电池壳体的密封性的同时有效地排出在电池异常操作期间产生的内部高压气体（例如过充电）从电池壳体中排出的效果，从而同时改善 电池的效率和安全性。

公开(公告)号：US08277970B2

公开(公告)日：2012-10-02

申请号：US12309912

申请日：2007-07-21

Applicant: Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

Inventor： Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

IPC: H01M2/02 ,  H01M10/04

CPC classification number: H01M2/021 ,  H01M2/0275 ,  H01M2/345 ,  H01M10/052

Abstract: Disclosed herein is a secondary battery including an electrode assembly of a cathode/separator/anode structure mounted in a pouch-shaped battery case in a sealed state, wherein a residue portion, which is not sealed (non-sealing residue portion), is defined between a sealing portion of the battery case and the electrode assembly for collecting generated gas, and the non-sealing residue portion is formed by mounting the electrode assembly between upper and lower laminate sheets, at least one of which has a receiving part of a size approximately corresponding to the electrode assembly, sealing three sides of the upper and lower laminate sheets, including two sides where electrode terminals are disposed, among four sides of the upper and lower laminate sheets, injecting an electrolyte in the battery case through the non-sealing portion, and sealing the non-sealing portion such that the resultant sealing portion is spaced a predetermined width from the receiving part.

Abstract translation: 本文公开了一种二次电池，其包括以密封状态安装在袋状电池壳体中的阴极/隔板/阳极结构的电极组件，其中限定未密封（非密封残留部分）的残留部分 在电池壳体的密封部分和用于收集产生的气体的电极组件之间，并且非密封残留部分通过将电极组件安装在上部和下部层压片材之间而形成，其中至少一个具有容纳部分的尺寸 大致对应于电极组件，在上下层叠片的四个侧面之间密封上下层叠片的三面，包括设置有电极端子的两侧，通过非密封将电解质注入电池壳体 并且密封非密封部分，使得所得密封部分与接收部分间隔开预定宽度。

公开(公告)号：US20120196161A1

公开(公告)日：2012-08-02

申请号：US13284066

申请日：2011-10-28

Applicant: Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

Inventor： Seung-Jin Yang ,  Jeong Hee Choi ,  Hanho Lee ,  Ji Heon Ryu

IPC: H01M2/12

CPC classification number: H01M2/1229 ,  H01M2/0212 ,  H01M2/0287 ,  H01M2/1264

Abstract: Disclosed herein is a plate-shaped secondary battery constructed in a structure in which an electrode assembly of a cathode/separator/anode structure is mounted in a battery case, and the battery case is sealed by thermal welding, wherein the secondary battery has at least one-way exhaust member, mounted at a sealed portion, formed at the outer circumference of an electrode assembly receiving part of the battery case, for allowing internal high-pressure gas to be exhausted out of a battery cell and preventing external gas from being introduced into the battery cell. The secondary battery according to the present invention has the effect of effectively exhausting internal high-pressure gas generated during the abnormal operation of the battery, such as overcharge, out of the battery case, while maintaining the sealability of the battery case, thereby simultaneously improving the efficiency and safety of the battery.

Abstract translation: 这里公开了一种板状二次电池，其结构是将阴极/隔板/阳极结构的电极组件安装在电池壳体中，并且电池壳体通过热焊接而被密封，其中二次电池具有至少 单向排气构件，安装在密封部分处，形成在电池组件的电极组件接收部分的外周，用于允许内部高压气体从电池单元排出并防止外部气体被引入 进入电池单元。 根据本发明的二次电池具有在保持电池壳体的密封性的同时有效地排出在电池异常操作期间产生的内部高压气体（例如过充电）从电池壳体中排出的效果，从而同时改善 电池的效率和安全性。

公开(公告)号：US20110175175A1

公开(公告)日：2011-07-21

申请号：US12956920

申请日：2010-11-30

Applicant: Seung-Jin Yang ,  Yong-Tae Kim

Inventor： Seung-Jin Yang ,  Yong-Tae Kim

IPC: H01L27/088

CPC classification number: H01L21/823425 ,  H01L27/112 ,  H01L27/11253 ,  H01L27/11519 ,  H01L27/11521

Abstract: Provided is a semiconductor device for applying common source lines with individual bias voltages. The device includes a substrate, cell transistors arrayed in a cell matrix shape on the substrate and configured to have gate insulating patterns, gate electrodes, common source regions, drain regions and channel regions. Word lines are configured to electrically interconnect the gate electrodes with each other. Common source lines are shared between only a pair of the neighboring word lines and are configured to electrically interconnect the common source regions with each other. Drain metal contacts and source metal contacts are arranged in a straight line on the drain regions. Bit lines are electrically connected to the drain metal contacts. And impurity regions are configured to control the threshold voltage of the channel regions.

Abstract translation: 提供了一种用于以单独的偏置电压施加公共源极线的半导体器件。 该器件包括衬底，在衬底上以单元矩阵形状排列的单元晶体管，并且被配置为具有栅极绝缘图案，栅极电极，公共源极区域，漏极区域和沟道区域。 字线被配置为将栅电极彼此电互连。 公共源极线仅在一对相邻字线之间共享并且被配置为将公共源极区域彼此电互连。 漏极金属触点和源极金属触点排列在漏极区域的直线上。 位线电连接到漏极金属触点。 并且杂质区域被配置为控制沟道区域的阈值电压。

公开(公告)号：US20070278531A1

公开(公告)日：2007-12-06

申请号：US11648057

申请日：2006-12-29

Applicant: Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Seung-Jin Yang ,  Hyok-Ki Kwon

Inventor： Yong-Suk Choi ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Seung-Jin Yang ,  Hyok-Ki Kwon

IPC: H01L29/76

CPC classification number: H01L29/7881 ,  H01L21/28273 ,  H01L29/42336

Abstract: A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is interposed between the floating gate electrode and the semiconductor substrate. A control gate electrode is disposed over the floating gate electrode. The floating gate electrode includes projections adjacent to the slanted sides of the recess.

Abstract translation: 半导体闪存器件。 闪存器件包括设置在具有在半导体衬底中的倾斜侧面的凹部中的浮栅电极。 栅极绝缘膜介于浮栅电极和半导体衬底之间。 控制栅电极设置在浮栅电极上。 浮栅电极包括与凹部的倾斜侧相邻的突起。

公开(公告)号：US20070023820A1

公开(公告)日：2007-02-01

申请号：US11488983

申请日：2006-07-19

Applicant: Seung-Jin Yang ,  Jeong-Uk Han ,  Kwang-Wook Koh ,  Jae-Hwang Kim ,  Sung-Chul Park ,  Ju-Ri Kim

Inventor： Seung-Jin Yang ,  Jeong-Uk Han ,  Kwang-Wook Koh ,  Jae-Hwang Kim ,  Sung-Chul Park ,  Ju-Ri Kim

IPC: H01L29/788 ,  H01L21/8238

CPC classification number: H01L29/42328 ,  G11C16/0425 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/7883

Abstract: In a non-volatile memory device and methods of forming and operating the same, one memory transistor includes sidewall selection gates covering both sidewalls of a floating gate when the floating gate and a control gate are stacked. The sidewall selection gates are in a spacer form. Since the sidewall selection gates are in a spacer form on the sidewall of the floating gate, the degree of integration of cells can be improved. Additionally, since the side wall selection gates are disposed on both sidewalls of the floating gate, a voltage applied from a bit line and a common source line can be controlled and thus conventional writing/erasing errors can be prevented. Therefore, distribution of threshold voltage can be improved.

Abstract translation: 在非易失性存储器件及其形成和操作它的方法中，当浮置栅极和控制栅极堆叠时，一个存储器晶体管包括覆盖浮置栅极的两个侧壁的侧壁选择栅极。 侧壁选择门是间隔件形式。 由于侧壁选择栅极在浮动栅极的侧壁上是间隔物形式，所以可以提高电池的集成度。 此外，由于侧壁选择栅极设置在浮置栅极的两个侧壁上，所以可以控制从位线和公共源极线施加的电压，因此可以防止常规的写入/擦除错误。 因此，可以提高阈值电压的分布。

公开(公告)号：US09235992B2

公开(公告)日：2016-01-12

申请号：US13493225

申请日：2012-06-11

Applicant: Seung-Jin Yang ,  Dae-Yong Kim ,  Nam-Hyuk Kim ,  Seung-Hun Jeong ,  Byeong-Jin Kim ,  In-Bae Chang

Inventor： Seung-Jin Yang ,  Dae-Yong Kim ,  Nam-Hyuk Kim ,  Seung-Hun Jeong ,  Byeong-Jin Kim ,  In-Bae Chang

IPC: G09B23/28

CPC classification number: G09B23/288

Abstract: There is provided a simulator for CPR and defibrillator training, which may perform training and evaluation of CPR and a defibrillator so that when there is a patient in an emergency situation, effective first aid can be provided to the patient. Through the simulator for CPR and defibrillator training, CPR and the use of the defibrillator for emergency medical technicians such as a doctor, a nurse and an emergency medical technician can be systematically and repetitively trained, and a person in charge of training can identify whether or not the education is performed effectively by recording and evaluating a training situation. Also, through the simulator, the education of CPR and defibrillator training is possible so that not only the emergency medical technicians but also general people can perform emergency treatment effectively.

Abstract translation: 提供了用于CPR和除颤器训练的模拟器，其可以执行CPR和除颤器的训练和评估，使得当患者处于紧急情况时，可以向患者提供有效的急救。 通过CPR和除颤器训练的模拟器，可以系统地和重复地训练CPR和使用医生，护士和紧急医疗技术人员等紧急医疗技术人员的除颤器，负责训练的人员可以识别是否 不是通过记录和评估培训情况来有效地进行教育。 此外，通过模拟器，CPR和除颤器培训的教育是可能的，不仅紧急医疗技术人员和普通人员可以有效地进行紧急处理。

公开(公告)号：US09129011B2

公开(公告)日：2015-09-08

申请号：US12433133

申请日：2009-04-30

Applicant: Seung-Jin Yang

Inventor： Seung-Jin Yang

IPC: H04M1/00 ,  G06F17/30 ,  H04M1/725 ,  H04M3/493 ,  G06F3/16

CPC classification number: G06F17/30663 ,  G06F3/167 ,  G06F17/30899 ,  H04M1/72561 ,  H04M3/4938 ,  H04M2250/22 ,  H04M2250/74

Abstract: A mobile terminal including a wireless communication unit configured to access a web page, a display unit configured to display the accessed web page, a receiving unit configured to receive input voice information, and a controller configured to convert the input voice information into text information, to search the displayed web page for objects that include the converted text information, and to control the display unit to distinctively display found objects that include the converted text information from other information displayed on the web page.

Abstract translation: 一种移动终端，包括被配置为访问网页的无线通信单元，被配置为显示所访问的网页的显示单元，被配置为接收输入语音信息的接收单元，以及被配置为将输入的语音信息转换为文本信息的控制器， 在显示的网页上搜索包含转换的文本信息的对象，并且控制显示单元从显示在网页上的其他信息中区别地显示包含转换的文本信息的找到对象。