公开(公告)号：US20160265582A1

公开(公告)日：2016-09-15

申请号：US15062638

申请日：2016-03-07

Applicant: Sherif Abdalla

Inventor： Sherif Abdalla

IPC: F16C11/04 ,  E05D7/10 ,  E06B3/48

CPC classification number: F16C11/04 ,  E05D7/10 ,  E05D15/24 ,  E05D15/242 ,  E05D15/48 ,  E05Y2201/214 ,  E05Y2201/232 ,  E05Y2800/71 ,  E05Y2900/106 ,  E06B3/485 ,  F16C11/045 ,  F16C11/10

Abstract: A sectional door hinge system is provided which is engageable between upper and lower portions of a sectional door configured for rolling in a track abutting a door jamb. Each hinge is actuatable to move from an engaged position preventing separation of the hinge to a configuration allowing separation between two sections forming the hinge. Separation of the hinge sections allows movement of the upper portion of the sectional door, independently of the lower section. The door hinge system may be retrofit to existing sectional garage doors and provided with newly manufacture garage doors.

Abstract translation: 提供了一种分段门铰链系统，其可以在构造成用于在邻近门侧柱的轨道中滚动的截面门的上部和下部之间接合。 每个铰链可致动以从接合位置移动，从而防止铰链分离成允许在形成铰链的两个部分之间分离的构造。 铰链部分的分离允许分段门的上部部分的移动，独立于下部。 门铰链系统可以改装现有的分区车库门并且设有新制造的车库门。

公开(公告)号：US20120301149A1

公开(公告)日：2012-11-29

申请号：US13568406

申请日：2012-08-07

Applicant: Thierry Pinguet ,  Sherif Abdalla ,  Mark Peterson ,  Gianlorenzo Masini ,  Peter DeDobbelaere

Inventor： Thierry Pinguet ,  Sherif Abdalla ,  Mark Peterson ,  Gianlorenzo Masini ,  Peter DeDobbelaere

IPC: H04B10/02

CPC classification number: G02B6/428 ,  G02B6/12004 ,  G02B6/34 ,  G02B6/4295 ,  G02B2006/12107 ,  G02B2006/12123 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/212 ,  H01L21/84 ,  H01L25/0652 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2224/73265 ,  H01L2225/06541 ,  H04B10/27

Abstract: Methods and systems for hybrid integration of optical communication systems are disclosed and may include receiving continuous wave (CW) optical signals in a silicon photonics die (SPD) from an optical source external to the SPD. The received CW optical signals may be processed based on electrical signals received from an electronics die bonded to the SPD via metal interconnects. Modulated optical signals may be received in the SPD from optical fibers coupled to the SPD. Electrical signals may be generated in the SPD based on the received modulated optical signals and communicated to the electronics die via the metal interconnects. The CW optical signals may be received from an optical source assembly coupled to the SPD and/or from one or more optical fibers coupled to the SPD. The received CW optical signals may be processed utilizing one or more optical modulators, which may comprise Mach-Zehnder interferometer modulators.

Abstract translation: 公开了用于光通信系统的混合集成的方法和系统，并且可以包括在来自SPD外部的光源的硅光子管芯（SPD）中接收连续波（CW）光信号。 接收到的CW光信号可以基于从通过金属互连结合到SPD的电子管芯接收的电信号进行处理。 可以在SPD中从耦合到SPD的光纤接收调制的光信号。 电信号可以基于接收到的调制光信号在SPD中产生，并通过金属互连传送到电子管芯。 CW光信号可以从耦合到SPD的光源组件和/或从耦合到SPD的一个或多个光纤接收。 可以使用一个或多个光学调制器来处理接收的CW光信号，该调制器可以包括马赫 - 曾德干涉仪调制器。

公开(公告)号：US20090022500A1

公开(公告)日：2009-01-22

申请号：US12241961

申请日：2008-09-30

Applicant: Thierry Pinguet ,  Steffen Gloeckner ,  Sherif Abdalla ,  Sina Mirsaidi ,  Peter De Dobbelaere

Inventor： Thierry Pinguet ,  Steffen Gloeckner ,  Sherif Abdalla ,  Sina Mirsaidi ,  Peter De Dobbelaere

IPC: H04B10/00

CPC classification number: H04B10/25 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/4214 ,  G02B6/43

Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

Abstract translation: 公开了集成在CMOS芯片上的光电收发器的方法和系统，并且可以包括通过可以包括保护环的CMOS芯片的顶表面上的光栅耦合器从光纤接收光信号。 光电检测器可以集成在CMOS芯片中。 CW光信号可以经由光栅耦合器从激光源接收，并且可以使用可以是马赫曾德和/或环形调制器的光学调制器进行调制。 CMOS芯片中的电路可以驱动光学调制器。 调制的光信号可以通过光栅耦合器从CMOS芯片的顶表面传送到光纤中。 所接收的光信号可以经由波导在设备之间传送。 光电检测器可以包括锗波导光电二极管，雪崩光电二极管和/或异质结二极管。 可以使用边缘发射和/或垂直腔表面发射半导体激光器来产生CW光信号。

公开(公告)号：US08665508B2

公开(公告)日：2014-03-04

申请号：US13568616

申请日：2012-08-07

Applicant: Daniel Kucharski ,  Brian Welch ,  Sherif Abdalla

Inventor： Daniel Kucharski ,  Brian Welch ,  Sherif Abdalla

IPC: G02B26/00 ,  G02F1/01 ,  G02F1/03 ,  G02F1/07 ,  G02B26/06 ,  H04B10/50 ,  H04B10/54 ,  G02B26/08

CPC classification number: H04B10/5161 ,  G02B26/06 ,  G02B26/0841 ,  G02F1/0121 ,  G02F1/225 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2201/58 ,  H04B10/0795 ,  H04B10/505 ,  H04B10/5053 ,  H04B10/541

Abstract: Methods and systems for encoding multi-level pulse amplitude modulated signals using integrated optoelectronics are disclosed and may include generating a multi-level, amplitude-modulated optical signal utilizing an optical modulator driven by two or more electrical input signals. The optical modulator may include optical modulator elements coupled in series and configured into groups. The number of optical modular elements and groups may configure the number of levels in the multi-level amplitude modulated optical signal. Unit drivers may be coupled to each of the groups. The electrical input signals may be synchronized before communicating them to the unit drivers. Phase addition may be synchronized utilizing one or more electrical delay lines. The optical modulator may be integrated on a single substrate, which may include one of: silicon, gallium arsenide, germanium, indium gallium arsenide, polymers, or indium phosphide. The optical modulator may include a Mach-Zehnder interferometer or one or more ring modulators.

Abstract translation: 公开了使用集成光电子学来编码多电平脉冲幅度调制信号的方法和系统，并且可以包括利用由两个或多个电输入信号驱动的光调制器来产生多电平调幅光信号。 光调制器可以包括串联耦合并被配置成组的光调制器元件。 光学模块元件和组的数量可以配置多电平调幅光信号中的电平数量。 单元驱动器可以耦合到每个组。 电输入信号可以在将其传送到单元驱动器之前被同步。 可以使用一个或多个电延迟线来使相位相加同步。 光学调制器可以集成在单个衬底上，其可以包括硅，砷化镓，锗，砷化铟镓，聚合物或磷化铟中的一种。 光调制器可以包括马赫 - 曾德尔干涉仪或一个或多个环形调制器。

公开(公告)号：US20130094865A9

公开(公告)日：2013-04-18

申请号：US12241961

申请日：2008-09-30

Applicant: Thierry Pinguet ,  Steffen Gloeckner ,  Sherif Abdalla ,  Sina Mirsaidi ,  Peter De Dobbelaere ,  Lawrence C. Gunn, III

Inventor： Thierry Pinguet ,  Steffen Gloeckner ,  Sherif Abdalla ,  Sina Mirsaidi ,  Peter De Dobbelaere ,  Lawrence C. Gunn, III

IPC: H04B10/00

CPC classification number: H04B10/25 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/4214 ,  G02B6/43

Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via grating couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

公开(公告)号：US20120315036A1

公开(公告)日：2012-12-13

申请号：US13568616

申请日：2012-08-07

Applicant: Daniel Kucharski ,  Brian Welch ,  Sherif Abdalla

Inventor： Daniel Kucharski ,  Brian Welch ,  Sherif Abdalla

IPC: H04B10/04

CPC classification number: H04B10/5161 ,  G02B26/06 ,  G02B26/0841 ,  G02F1/0121 ,  G02F1/225 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2201/58 ,  H04B10/0795 ,  H04B10/505 ,  H04B10/5053 ,  H04B10/541

Abstract: Methods and systems for encoding multi-level pulse amplitude modulated signals using integrated optoelectronics are disclosed and may include generating a multi-level, amplitude-modulated optical signal utilizing an optical modulator driven by two or more electrical input signals. The optical modulator may include optical modulator elements coupled in series and configured into groups. The number of optical modular elements and groups may configure the number of levels in the multi-level amplitude modulated optical signal. Unit drivers may be coupled to each of the groups. The electrical input signals may be synchronized before communicating them to the unit drivers. Phase addition may be synchronized utilizing one or more electrical delay lines. The optical modulator may be integrated on a single substrate, which may include one of: silicon, gallium arsenide, germanium, indium gallium arsenide, polymers, or indium phosphide. The optical modulator may include a Mach-Zehnder interferometer or one or more ring modulators.

Abstract translation: 公开了使用集成光电子学来编码多电平脉冲幅度调制信号的方法和系统，并且可以包括利用由两个或多个电输入信号驱动的光调制器来产生多电平调幅光信号。 光调制器可以包括串联耦合并被配置成组的光调制器元件。 光学模块元件和组的数量可以配置多电平调幅光信号中的电平数量。 单元驱动器可以耦合到每个组。 电输入信号可以在将其传送到单元驱动器之前被同步。 可以使用一个或多个电延迟线来使相位相加同步。 光学调制器可以集成在单个衬底上，其可以包括硅，砷化镓，锗，砷化铟镓，聚合物或磷化铟中的一种。 光调制器可以包括马赫 - 曾德尔干涉仪或一个或多个环形调制器。

公开(公告)号：US20100060972A1

公开(公告)日：2010-03-11

申请号：US12555291

申请日：2009-09-08

Applicant: Daniel Kucharski ,  Sherif Abdalla ,  Brian Welch

Inventor： Daniel Kucharski ,  Sherif Abdalla ,  Brian Welch

IPC: G02F1/21 ,  G02F1/01

CPC classification number: H04B10/5161 ,  G02B26/06 ,  G02B26/0841 ,  G02F1/0121 ,  G02F1/225 ,  G02F1/2255 ,  G02F2001/212 ,  G02F2201/58 ,  H04B10/0795 ,  H04B10/505 ,  H04B10/5053 ,  H04B10/541

Abstract: Methods and systems for encoding multi-level pulse amplitude modulated signals using integrated optoelectronics are disclosed and may include generating a multi-level, amplitude-modulated optical signal utilizing an optical modulator driven by two or more electrical input signals. The optical modulator may include optical modulator elements coupled in series and configured into groups. The number of optical modular elements and groups may configure the number of levels in the multi-level amplitude modulated optical signal. Unit drivers may be coupled to each of the groups. The electrical input signals may be synchronized before communicating them to the unit drivers utilizing flip-flops. Phase addition may be synchronized utilizing one or more electrical delay lines. The optical modulator may be integrated on a single substrate, which may include one of: silicon, gallium arsenide, germanium, indium gallium arsenide, polymers, or indium phosphide. The optical modulator may include a Mach-Zehnder interferometer or one or more ring modulators.

公开(公告)号：US20100059822A1

公开(公告)日：2010-03-11

申请号：US12554449

申请日：2009-09-04

Applicant: Thierry Pinguet ,  Steffen Gloeckner ,  Peter De Dobbelaere ,  Sherif Abdalla ,  Daniel Kucharski ,  Gianlorenzo Masini ,  Kosei Yokoyama ,  John Guckenberger ,  Attila Mekis

Inventor： Thierry Pinguet ,  Steffen Gloeckner ,  Peter De Dobbelaere ,  Sherif Abdalla ,  Daniel Kucharski ,  Gianlorenzo Masini ,  Kosei Yokoyama ,  John Guckenberger ,  Attila Mekis

IPC: H01L27/12 ,  H01L21/782

CPC classification number: H04B10/2575 ,  H01L21/84 ,  H01L27/1203 ,  H04B10/40

Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

Abstract translation: 公开了用于在CMOS工艺中单片集成光子学和电子学的方法和系统，并且可以包括在具有不同硅层厚度的单个CMOS晶片上制造光子和电子器件。 利用体CMOS工艺和/或利用SOI CMOS工艺的SOI晶片，可以在绝缘体上半导体（SOI）晶片上制造器件。 可以使用双重SOI工艺和/或选择性区域生长工艺来制造不同的厚度。 可以利用一个或多个氧注入和/或在CMOS晶片上利用CMOS沟槽氧化物来制造覆层。 硅可以利用外延横向过度生长沉积在CMOS沟槽氧化物上。 可以利用选择性背面蚀刻来制造包覆层。 可以通过在选择性蚀刻的区域上沉积金属来制造反射表面。 集成在CMOS晶片中的二氧化硅或硅锗可以用作蚀刻停止层。