Real time analysis of periodic structures on semiconductors
    11.
    发明申请
    Real time analysis of periodic structures on semiconductors 有权
    半导体周期性结构的实时分析

    公开(公告)号:US20050251350A1

    公开(公告)日:2005-11-10

    申请号:US11177699

    申请日:2005-07-08

    申请人: Jon Opsal Hanyou Chu

    发明人: Jon Opsal Hanyou Chu

    摘要: A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

    摘要翻译: 公开了一种在实时基础上表征样品上形成的几何结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器。 处理器创建初始理论模型,然后计算该样本的理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较,模型配置被修改为更接近实际的测量结构。 处理器重新计算修改模型的光学响应,并将结果与​​测量数据进行比较。 以迭代的方式重复该过程,直到达到最佳拟合。 计算模型的光学响应的​​步骤作为波长或入射角分布到处理器,因此可以并行执行这些计算。

    CD metrology analysis using green's function

    公开(公告)号:US06867866B1

    公开(公告)日:2005-03-15

    申请号:US10212385

    申请日:2002-08-05

    IPC分类号: G01B11/00 G01N21/47 G01N31/00

    CPC分类号: G01N21/4788

    摘要: A method for modeling optical scattering includes an initial step of defining a zero-th order structure (an idealized representation) for a subject including a perturbation domain and a background material. A Green's function and a zero-th order wave function are obtained for the zero-th order structure using rigorous coupled wave analysis (RCWA). A Lippmann-Schwinger equation is constructed including the Green's function, zero-th order wave function and a perturbation function. The Lippmann-Schwinger equation is then evaluated over a selected set of mesh points within the perturbation domain. The resulting linear equations are solved to compute one or more reflection coefficients for the subject.

    Real time analysis of periodic structures on semiconductors

    公开(公告)号:US06704661B1

    公开(公告)日:2004-03-09

    申请号:US09906290

    申请日:2001-07-16

    申请人: Jon Opsal Hanyou Chu

    发明人: Jon Opsal Hanyou Chu

    IPC分类号: G06F1700

    摘要: A system for characterizing periodic structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

    Rational approximation and continued-fraction approximation approaches for computation efficiency of diffraction signals
    14.
    发明授权
    Rational approximation and continued-fraction approximation approaches for computation efficiency of diffraction signals 有权
    衍射信号的计算效率的理性近似和连续分数近似方法

    公开(公告)号:US08560270B2

    公开(公告)日:2013-10-15

    申请号:US12331192

    申请日:2008-12-09

    申请人: Hanyou Chu

    发明人: Hanyou Chu

    CPC分类号: G01B11/24

    摘要: Methods and apparatuses for improving computation efficiency for diffraction signals in optical metrology are described. The method includes simulating a set of diffraction orders for a structure. A set of diffraction efficiencies is determined for the set of diffraction orders. A rational approximation or a continued-fraction approximation is applied to the set of diffraction efficiencies to obtain a rationally approximated set of diffraction efficiencies or a continued-fraction approximated set of diffraction efficiencies, respectively. A simulated spectrum is then provided.

    摘要翻译: 描述了用于提高光学测量中的衍射信号的计算效率的方法和装置。 该方法包括模拟一组结构的衍射级数。 对于衍射级集合确定了一组衍射效率。 衍射效率组合应用有理逼近或连续分数近似,以分别获得合理近似的衍射效率集合或连续分数近似的衍射效率集合。 然后提供模拟光谱。

    RATIONAL APPROXIMATION AND CONTINUED-FRACTION APPROXIMATION APPROACHES FOR COMPUTATION EFFICIENCY OF DIFFRACTION SIGNALS
    15.
    发明申请
    RATIONAL APPROXIMATION AND CONTINUED-FRACTION APPROXIMATION APPROACHES FOR COMPUTATION EFFICIENCY OF DIFFRACTION SIGNALS 有权
    差分信号的计算效率的近似近似和连续逼近近似方法

    公开(公告)号:US20100145655A1

    公开(公告)日:2010-06-10

    申请号:US12331192

    申请日:2008-12-09

    申请人: Hanyou Chu

    发明人: Hanyou Chu

    IPC分类号: G06F15/00

    CPC分类号: G01B11/24

    摘要: Methods and apparatuses for improving computation efficiency for diffraction signals in optical metrology are described. The method includes simulating a set of diffraction orders for a structure. A set of diffraction efficiencies is determined for the set of diffraction orders. A rational approximation or a continued-fraction approximation is applied to the set of diffraction efficiencies to obtain a rationally approximated set of diffraction efficiencies or a continued-fraction approximated set of diffraction efficiencies, respectively. A simulated spectrum is then provided.

    摘要翻译: 描述了用于提高光学测量中的衍射信号的计算效率的方法和装置。 该方法包括模拟一组结构的衍射级数。 对于衍射级集合确定了一组衍射效率。 衍射效率组合应用有理逼近或连续分数近似,以分别获得合理近似的衍射效率集合或连续分数近似的衍射效率集合。 然后提供模拟光谱。

    MEASURING A PROCESS PARAMETER OF A SEMICONDUCTOR FABRICATION PROCESS USING OPTICAL METROLOGY
    16.
    发明申请
    MEASURING A PROCESS PARAMETER OF A SEMICONDUCTOR FABRICATION PROCESS USING OPTICAL METROLOGY 失效
    使用光学计量法测量半导体制造工艺的工艺参数

    公开(公告)号:US20080212080A1

    公开(公告)日:2008-09-04

    申请号:US12026485

    申请日:2008-02-05

    IPC分类号: G01N21/00

    CPC分类号: H01L22/20

    摘要: To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.

    摘要翻译: 为了测量半导体制造工艺的工艺参数,使用工艺参数的第一值在第一区域上执行制造工艺。 使用过程参数的第二值在第二区域上执行制造过程。 使用光学测量工具获得第一区域的第一测量。 使用光学测量工具获得第二区域的第二测量。 基于第一测量确定第一区域的一个或多个光学性质。 基于第二测量来确定第二区域的一个或多个光学特性。 制造工艺在第三区域进行。 使用光学测量工具获得第三个区域的第三个测量值。 基于第三测量和所确定的第一和第二区域的光学特性之间的关系确定过程参数的第三值。

    Measuring a process parameter of a semiconductor fabrication process using optical metrology
    17.
    发明授权
    Measuring a process parameter of a semiconductor fabrication process using optical metrology 有权
    使用光学测量法测量半导体制造工艺的工艺参数

    公开(公告)号:US07327475B1

    公开(公告)日:2008-02-05

    申请号:US11639515

    申请日:2006-12-15

    IPC分类号: G06F19/00 H01L21/66

    CPC分类号: H01L22/20

    摘要: To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.

    摘要翻译: 为了测量半导体制造工艺的工艺参数,使用工艺参数的第一值在第一区域上执行制造工艺。 使用过程参数的第二值在第二区域上执行制造过程。 使用光学测量工具获得第一区域的第一测量。 使用光学测量工具获得第二区域的第二测量。 基于第一测量确定第一区域的一个或多个光学性质。 基于第二测量来确定第二区域的一个或多个光学特性。 制造工艺在第三区域进行。 使用光学测量工具获得第三个区域的第三个测量值。 基于第三测量和所确定的第一和第二区域的光学特性之间的关系确定过程参数的第三值。

    Real time analysis of periodic structures on semiconductors
    18.
    发明授权
    Real time analysis of periodic structures on semiconductors 有权
    半导体周期性结构的实时分析

    公开(公告)号:US07031848B2

    公开(公告)日:2006-04-18

    申请号:US11177699

    申请日:2005-07-08

    申请人: Jon Opsal Hanyou Chu

    发明人: Jon Opsal Hanyou Chu

    IPC分类号: G06F17/00

    摘要: A system for characterizing geometric structures formed on a sample on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of either wavelength or angle of incidence. The output signals are supplied to a parallel processor. The processor creates an initial theoretical model and then calculates the theoretical optical response of that sample. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. The processor recalculates the optical response of the modified model and compares the result to the measured data. This process is repeated in an iterative manner until a best fit is achieved. The steps of calculating the optical response of the model is distributed to the processors as a function of wavelength or angle of incidence so these calculations can be performed in parallel.

    摘要翻译: 公开了一种在实时基础上表征样品上形成的几何结构的系统。 多参数测量模块产生作为波长或入射角的函数的输出信号。 输出信号被提供给并行处理器。 处理器创建一个初始理论模型,然后计算该样本的理论光学响应。 将计算出的光学响应与测量值进行比较。 基于比较,模型配置被修改为更接近实际的测量结构。 处理器重新计算修改模型的光学响应,并将结果与​​测量数据进行比较。 以迭代的方式重复该过程,直到达到最佳拟合。 计算模型的光学响应的​​步骤作为波长或入射角分布到处理器,因此可以并行执行这些计算。

    Spatial averaging technique for ellipsometry and reflectometry
    19.
    发明授权
    Spatial averaging technique for ellipsometry and reflectometry 有权
    用于椭圆偏振和反射测量的空间平均技术

    公开(公告)号:US06856385B2

    公开(公告)日:2005-02-15

    申请号:US10400369

    申请日:2003-03-27

    摘要: This invention relates to optical metrology tools that are used to evaluate small measurement areas on a semiconductor wafer, where the measurement area is surrounded by a material different from the measurement area. In one embodiment, a probe beam is scanned over the measurement area and the surrounding material as data is taken at multiple locations. A processor determines the characteristics of the measurement area by identifying an extremum value of the measurements which represents the center of the measurement area. In another embodiment, the processor determines the characteristics of the sample using a combination of light measured from within and without the measurement area. The measured data is treated as a combination of light from both regions and mathematically modeled to account for both the contribution of the light reflected from the measurement area and the light reflected from the surrounding material.

    摘要翻译: 本发明涉及光学测量工具,其用于评估半导体晶片上的小测量区域,其中测量区域由与测量区域不同的材料包围。 在一个实施例中,当数据在多个位置拍摄时,探测光束被扫描在测量区域和周围的材料上。 处理器通过识别表示测量区域的中心的测量值的极值来确定测量区域的特性。 在另一个实施例中,处理器使用从内部和不具有测量区域测量的光的组合来确定样本的特性。 测量数据被视为来自两个区域的光的组合,并且通过数学建模来考虑从测量区域反射的光的贡献和从周围材料反射的光的贡献。