公开(公告)号：US08883543B2

公开(公告)日：2014-11-11

申请号：US14006563

申请日：2012-04-05

Applicant: Shigeru Okuuchi

Inventor： Shigeru Okuuchi

IPC: H01L51/40 ,  H01L31/0236 ,  H01L31/0216

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  Y02E10/50 ,  Y02E10/52

Abstract: Provided is a method of producing a wafer for a solar cell that can produce the solar cell with high conversion efficiency.A method of producing a wafer for a solar cell according to the present invention comprises a first step of contacting lower alcohol to at least one surface of the semiconductor wafer and a second step, after the first step, of contacting hydrofluoric acid containing metal ion to the at least one surface of the semiconductor wafer, and a third step that is, after the second step, a step of contacting alkali solution to the at least one surface of the semiconductor wafer, a step of contacting acid solution containing hydrofluoric acid and nitric acid to the at least one surface of the semiconductor wafer, or a step of carrying out an oxidation treatment to the at least one surface of the semiconductor wafer.

Abstract translation: 提供一种制造能够以高转换效率制造太阳能电池的太阳能电池用晶片的方法。 根据本发明的太阳能电池晶片的制造方法包括将低级醇与半导体晶片的至少一个表面接触的第一步骤和在第一步骤之后将含有氢氟酸的金属离子与 半导体晶片的至少一个表面，以及第三步骤，在第二步骤之后，使碱溶液与半导体晶片的至少一个表面接触的步骤，使含有氢氟酸和硝酸的酸溶液接触的步骤 酸化至半导体晶片的至少一个表面，或对半导体晶片的至少一个表面进行氧化处理的步骤。

公开(公告)号：US20130291925A1

公开(公告)日：2013-11-07

申请号：US13261672

申请日：2012-01-18

Applicant: Shigeru Okuuchi

Inventor： Shigeru Okuuchi

IPC: H01L31/052 ,  H01L31/18

CPC classification number: H01L31/052 ,  H01L21/0203 ,  H01L31/0216 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

Abstract: A solar cell wafer having a porous layer on a surface of a semiconductor wafer typified by a silicon wafer, which can further reduce reflection loss of light at the surface. A solar cell wafer 100 of the present invention has a porous layer 11 having a pore diameter of 10 nm or more and 45 nm or less, on at least one surface 10A of a semiconductor wafer 10, and the layer thickness of the porous layer 11 is more than 50 nm and 450 nm or less.

Abstract translation: 一种太阳能电池晶片，其在由硅晶片表示的半导体晶片的表面上具有多孔层，能够进一步减少表面的光的反射损失。 本发明的太阳能电池晶片100在半导体晶片10的至少一个表面10A上具有孔径为10nm以上且45nm以下的多孔层11，多孔层11的层厚 大于50nm和450nm以下。

公开(公告)号：US20120122316A1

公开(公告)日：2012-05-17

申请号：US13384889

申请日：2010-07-27

Applicant: Motoi Kurokami ,  Shigeru Okuuchi ,  Hiroaki Sato

Inventor： Motoi Kurokami ,  Shigeru Okuuchi ,  Hiroaki Sato

IPC: H01L21/306

CPC classification number: H01L21/02054 ,  H01L21/02049

Abstract: An object of the present invention is to provided a wafer exhibiting excellent surface properties, in which variation in reaction, which has been concerned in surface treatment with a diffusion controlled process such as conventional wet treatment, is effectively suppressed in a method for surface treatment of a wafer involving a chemical treatment.Provided is a method for surface treatment of a wafer involving a chemical treatment, the chemical treatment including a reaction controlled process, and a diffusion controlled process following the reaction controlled process.

Abstract translation: 本发明的目的是提供一种显示出优异的表面性质的晶片，其中在常规湿法处理的扩散控制过程中涉及表面处理的反应变化在表面处理方法中被有效地抑制 涉及化学处理的晶片。 提供了一种用于表面处理包括化学处理的晶片的方法，包括反应控制过程的化学处理和反应控制过程之后的扩散控制过程。

公开(公告)号：US20120034850A1

公开(公告)日：2012-02-09

申请号：US13264057

申请日：2010-04-12

Applicant: Shigeru Okuuchi ,  Shinichi Ogata

Inventor： Shigeru Okuuchi ,  Shinichi Ogata

IPC: B24B1/00

CPC classification number: C30B25/186 ,  B24B37/042 ,  C30B29/06 ,  H01L21/02024 ,  H01L21/30625

Abstract: The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step D at which, before the growth step, at least a front surface of the silicon single crystal substrate is polished without using abrasive grains; and a second polishing step G at which at least the front surface of the silicon single crystal substrate is subjected to finish polishing after the growth step.

Abstract translation: 根据本发明的硅外延晶片的制造方法具有：生长步骤F，在硅单晶衬底上生长外延层; 在生长步骤之前，在不使用磨粒的情况下研磨硅单晶衬底的至少前表面的第一抛光步骤D; 以及第二研磨工序G，在生长工序后，至少使硅单晶衬底的前表面进行精加工。

公开(公告)号：US20100288192A1

公开(公告)日：2010-11-18

申请号：US12808691

申请日：2008-12-08

Applicant: Shigeru Okuuchi

Inventor： Shigeru Okuuchi

IPC: C30B23/02

CPC classification number: H01L21/02049 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02008 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02661

Abstract: A silicon oxide film on a wafer front surface, including on internal surfaces of pits, is removed by hydrogen fluoride gas. The pits are thus completely filled with a film growth component at a time of epitaxial film growth. Thereby, productivity is not reduced; wafer flatness is enhanced; and micro-roughness of the wafer front surface is improved.

Abstract translation: 包括在凹坑内表面上的晶片正面上的氧化硅膜被氟化氢气体除去。 因此，在外延膜生长时，凹坑完全被膜生长成分填充。 从而不降低生产率; 晶圆平面度增强; 并提高了晶片正面的微观粗糙度。