公开(公告)号：US08029853B2

公开(公告)日：2011-10-04

申请号：US12292566

申请日：2008-11-20

申请人： Hironobu Matsuzawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara

发明人： Hironobu Matsuzawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara

IPC分类号： B05D5/12

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/12

摘要： The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.

摘要翻译： 用于磁阻器件（CPP-GMR器件）的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层，其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作 用于在Zn膜形成操作之后氧化锌膜。 实施Zn膜形成操作，使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围，形成Zn膜 并且进行Zn膜氧化操作，使得在Zn膜氧化操作完成之后，在-120℃至-40℃的衬底温度范围内，氧化处理被降低。因此，优异的 平坦度和结晶性，ZnO层确保器件具有高MR比，并且还可以具有最适合于器件的面积电阻率AR。

公开(公告)号：US07920362B2

公开(公告)日：2011-04-05

申请号：US11943171

申请日：2007-11-20

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/39

CPC分类号： G11B5/59683

摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.

摘要翻译： 具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。 自由层的功能使得其磁化方向根据外部磁场而变化。 间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。 在它们之间插入半导体氧化物层。 形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

公开(公告)号：US20110051295A1

公开(公告)日：2011-03-03

申请号：US12461972

申请日：2009-08-31

申请人： Shinji Hara ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

发明人： Shinji Hara ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  H01L43/08 ,  H01L43/10

摘要： In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio.

摘要翻译： 在本发明的MR元件中，由于在与间隔层的界面附近的CoFe磁性层的晶体结构形成为紧密堆积结构，所以获得了极高的MR比的效果，例如 hcp结构和fcc结构，并且这些晶体结构的总存在比例通过面积比为25％以上。

公开(公告)号：US20100142098A1

公开(公告)日：2010-06-10

申请号：US12314346

申请日：2008-12-09

申请人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Tomihito Mizuno

发明人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Tomihito Mizuno

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  C23C14/0036 ,  C23C14/3464 ,  G01R33/093

摘要： A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.

摘要翻译： 一种制造具有一对磁性层的磁阻（MR）有效元件和包括ZnO膜的非磁性中间层的方法，其中所述一对磁性层的磁化方向的相对角度根据外部磁场而变化。 该方法包括将氧气和氩气的混合气体引入减压室的步骤，其中ZnO的第一靶，Zn的第二靶和具有右下层的衬底设置在腔室中，并且 在混合气体引入步骤之后分别通过将第一和第二直流（DC）施加功率分别施加到第一和第二靶和基底之间的空间来将ZnO膜沉积在右下层的步骤，其中第一和第二直流 将第二靶设置为负电位，将衬底设定为正电位。

公开(公告)号：US20100103562A1

公开(公告)日：2010-04-29

申请号：US12289401

申请日：2008-10-27

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Shinji Hara ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

摘要翻译： 磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。 屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。 磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。 两个磁通导向层中的每一个具有前端面和后端面。 偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

公开(公告)号：US07636024B2

公开(公告)日：2009-12-22

申请号：US10829236

申请日：2004-04-22

申请人： Shinji Hara

发明人： Shinji Hara

IPC分类号： H01P5/12 ,  H03H7/46

CPC分类号： H04B1/46

摘要： A wireless communication apparatus is made up of a transmission circuit block including an antenna that is laid out such that the transmission lines, i.e., the sum of the distance connecting respective circuit blocks between an output terminal of the transmission power amplifier to an input/output terminal of the antenna is shorter than the transmission line, i.e., the sum of the distance connecting respective circuit blocks between an input terminal of a transmission power amplifier and an output terminal of a RFIC disposed at a preceding stage of the transmission power amplifier. This arrangement realizes a wireless communications apparatus ensuring improvement of overall performance of the wireless application without reducing the total transmission loss or improving the performance of individual circuits.

摘要翻译： 无线通信装置由包括天线的发送电路块构成，该天线布置成使得传输线即传输功率放大器的输出端与输入/输出之间的连接各个电路块的距离之和 天线的端子比传输线短，即，连接发送功率放大器的输入端子和布置在发送功率放大器的前级的RFIC的输出端子之间的各个电路块的距离之和。 这种布置实现了无线通信装置，确保无线应用的整体性能得到改善，而不会降低总的传输损耗或提高各个电路的性能。

公开(公告)号：US20090086383A1

公开(公告)日：2009-04-02

申请号：US11865384

申请日：2007-10-01

申请人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

发明人： Shinji Hara ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

摘要： The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

摘要翻译： 本发明提供了包括间隔层的CPP（电流垂直于平面）结构（CPP-GMR器件）的巨磁阻效应器件，以及与夹在它们之间的间隔层堆叠在一起的第一铁磁层和第二铁磁层 ，其中感测电流在层叠方向上通过，其中第一铁磁层和第二铁磁层的功能使得两个磁体的磁化方向之间产生的角度根据外部磁场而相对地改变，所述间隔层包含半导体 氧化物层和氮元素界面保护层设置在形成全部或一部分所述间隔层的半导体氧化物层与绝缘层接触的位置。 因此，在半导体氧化物层和界面保护层的结的表面形成有高共价键合能力的氮化物，从而抑制氧从半导体氧化物层向绝缘层的迁移; 即使该装置在该过程中经受热和应力，阻止装置特性的波动和劣化。

公开(公告)号：US20080174920A1

公开(公告)日：2008-07-24

申请号：US11626562

申请日：2007-01-24

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/56 ,  G11B5/127

CPC分类号： G11B5/4826 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.

摘要翻译： 本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠， 它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层， 其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有 。 因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性 的电影特色。

公开(公告)号：US20080170336A1

公开(公告)日：2008-07-17

申请号：US11968911

申请日：2008-01-03

申请人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

发明人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3993 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc. It is thus possible to keep the area resistivity of the device low as desired, and make the semiconductor oxide layer forming a part of the spacer layer thick while holding back any noise increase. This makes sure the excellent advantages that any variation of the area resistivity of the device is inhibited while the S/N is prevented from getting worse, and the reliability of film characteristics is much more improved.

摘要翻译： 本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，并且第一铁磁层和第二铁磁层彼此层叠，间隔层插入 在它们之间具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层之间的半导体氧化物层 和第二非磁性金属层，形成所述间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，并且添加金属不太可能被氧化成锌。 因此，可以根据需要保持器件的面积电阻率低，并且使得形成间隔层的一部分的半导体氧化物层变厚，同时阻止任何噪声增加。 这确保了防止S / N变差的装置的面电阻率的任何变化被抑制的优点，并且膜特性的可靠性得到更大的改善。

公开(公告)号：US07354065B2

公开(公告)日：2008-04-08

申请号：US10852184

申请日：2004-05-25

申请人： Mutsuo Muramatsu ,  Shinji Hara ,  Yohei Mabashi ,  Tsunenori Kishimoto ,  Toyoaki Kato

发明人： Mutsuo Muramatsu ,  Shinji Hara ,  Yohei Mabashi ,  Tsunenori Kishimoto ,  Toyoaki Kato

IPC分类号： B60R21/045

CPC分类号： B60R21/045 ,  B60R2021/0051

摘要： A knee bolster whose load receiving parts absorb load from the knees of seated occupants of various physical sizes is provided. An upper knee bolster and a lower knee bolster are each provided with a load receiving part that receives load from the knees of a seated occupant who moves forward in the direction of vehicle length in the event of a vehicle head-on collision, and a deforming part that moves the load receiving part, which has been deformed by the load, forward in the direction of vehicle length.

摘要翻译： 提供负载接收部件从各种物理尺寸的坐着的乘员膝盖吸收负载的膝垫。 上膝盖垫和下膝垫枕均设置有承载部分，其承受来自在车辆正面碰撞的情况下沿车辆方向向前移动的乘坐乘员的膝盖的负载，并且变形 使已经被负载变形的负载接收部分沿着车辆长度方向向前移动的部分。