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    Magneto-resistive effect element provided with GaN spacer layer
    2.
    发明申请
    Magneto-resistive effect element provided with GaN spacer layer 有权
    具有GaN间隔层的磁阻效应元件

    公开(公告)号：US20100232066A1

    公开(公告)日：2010-09-16

    申请号：US12382137

    申请日：2009-03-10

    申请人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Hironobu Matsuzawa

    发明人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Hironobu Matsuzawa

    IPC分类号： G11B5/60 ,  G11B5/127 ,  G11B5/48

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

    摘要： A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component. A thin film magnetic head according to one embodiment of the present invention is provided with the following structures: an MR element mentioned above that has a first magnetic layer and a second magnetic layer, as free layers, in which the magnetization direction in the two layers changes according to the external magnetic field; a bias magnetic field application layer that applies a bias magnetic field to the first and second magnetic layers in an orthogonal direction to an air bearing surface (ABS); the bias magnetic field application layer is formed in a rear side of the MR element seen from the ABS; and a sense current flows in an orthogonal direction to a layer surface of the MR element.

    摘要翻译： 磁阻效应（MR）元件包括第一磁性层和第二磁性层，其中第一和第二磁性层的磁化方向的相对角度根据外部磁场而改变; 以及设置在第一磁性层和第二磁性层之间的间隔层。 间隔层包含氮化镓（GaN）作为主要成分。 根据本发明的一个实施例的薄膜磁头具有以下结构：上述具有第一磁性层和第二磁性层作为自由层的MR元件，其中两层中的磁化方向 根据外部磁场变化; 偏置磁场施加层，其在与空气轴承表面（ABS）正交的方向上对第一和第二磁性层施加偏置磁场; 偏置磁场施加层形成在从ABS看到的MR元件的后侧; 并且感测电流在与MR元件的层表面正交的方向上流动。

    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    4.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE
    5.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT IN CPP-TYPE STRUCTURE AND MAGNETIC DISK DEVICE 有权
    CPP型结构和磁盘设备中的磁阻效应元件

    公开(公告)号：US20110007421A1

    公开(公告)日：2011-01-13

    申请号：US12500907

    申请日：2009-07-10

    申请人： Shinji Hara ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

    发明人： Shinji Hara ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

    IPC分类号： G11B5/33 ,  G11B5/60

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01L43/08

    摘要： An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field.

    摘要翻译： CPP-GMR结构中的MR元件包括第一铁磁层，外延形成在第一铁磁层上的间隔层，位于间隔层上的第二铁磁层，并且与第一铁磁层层压到 夹住间隔层。 感测电流沿着第一和第二铁磁层的层叠方向流动。 第一铁磁层和第二铁磁层的磁化方向的角度由于外部施加的磁场而相对变化。

    Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer
    6.
    发明申请
    Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer 有权
    磁阻效应元件具有在磁性层和非磁性中间层之间的界面处含有Zn的层

    公开(公告)号：US20100232073A1

    公开(公告)日：2010-09-16

    申请号：US12382140

    申请日：2009-03-10

    申请人： Tsutomu Chou ,  Shinji Hara ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

    发明人： Tsutomu Chou ,  Shinji Hara ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn.

    摘要翻译： 薄膜磁头包括具有以下结构的磁阻效应（MR）层叠体：其中至少一个磁性层的磁化方向根据外部磁场而变化的第一和第二磁性层; 第一磁性层设置在层叠方向的下侧; 第二磁性层设置在层叠方向的上侧; 由夹在第一和第二磁性层之间的ZnO制成的非磁性中间层; 第一中间界面层设置在第一磁性层和非磁性中间层之间的界面处; 并且在非磁性中间层和第二磁性层之间的界面处设置第二中间界面层。 至少第一中间界面层含有Ag和Zn，或Au和Zn。

    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer
    7.
    发明申请
    Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer 审中-公开

    公开(公告)号：US20100149689A1

    公开(公告)日：2010-06-17

    申请号：US12314464

    申请日：2008-12-11

    申请人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita ,  Hironobu Matsuzawa

    发明人： Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Shinji Hara ,  Takahiko Machita ,  Hironobu Matsuzawa

    IPC分类号： G11B5/60 ,  G11B5/33

    CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3295

    摘要： A thin film magnetic head includes a magnetoresistance (MR) layered body that has first and second magnetic layers whose magnetization direction are changed according to an external magnetic field, a nonmagnetic middle layer and where the first magnetic layer, the nonmagnetic middle layer and the second magnetic layer are disposed in a manner of facing each other in respective order, first and second shield layers that are disposed in a manner of sandwiching the MR-stack in the film surface orthogonal direction of the MR-stack facing the first magnetic layer and the second magnetic layer, respectively, and that also serve as an electrode for applying a sense current to the film surface orthogonal direction of the MR-stack; and a bias magnetic field application means that is disposed on an opposite surface of an air bearing surface (ABS) of the MR-stack, and that applies a bias magnetic field to the MR-stack in the direction orthogonal to the ABS. The first shield layer has a first exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the first magnetic layer, and that transmits to the first magnetic layer an exchange coupling magnetic field in the direction in parallel with the ABS, and that includes an amorphous layer, and has a first antiferromagnetic layer that is disposed on a rear surface of the first ECMF application layer viewed from the first magnetic layer in a manner of facing the first ECMF application layer, and that is exchange-coupled with the first ECMF application layer. The second shield layer has a second exchange coupling magnetic field (ECMF) application layer that is disposed in a manner of facing the second magnetic layer, and that transmits to the second magnetic layer the exchange coupling magnetic field in a direction in parallel with the ABS; and a second antiferromagnetic layer that is disposed on a rear surface of the second ECMF application layer viewed from the second magnetic layer, and that is exchange-coupled with the second ECMF application layer.

    Fabrication process for magnetoresistive devices of the CPP type
    8.
    发明申请
    Fabrication process for magnetoresistive devices of the CPP type 有权
    CPP型磁阻器件的制造工艺

    公开(公告)号：US20100124617A1

    公开(公告)日：2010-05-20

    申请号：US12292566

    申请日：2008-11-20

    申请人： Hironobu Matsuzawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara

    发明人： Hironobu Matsuzawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Shinji Hara

    IPC分类号： B05D5/12

    CPC分类号： G11B5/3163 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/12

    摘要： The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.

    摘要翻译： 用于磁阻器件（CPP-GMR器件）的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层，其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作 用于在Zn膜形成操作之后氧化锌膜。 实施Zn膜形成操作，使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围，形成Zn膜 并且进行Zn膜氧化操作，使得在Zn膜氧化操作完成之后，在-120℃至-40℃的衬底温度范围内，氧化处理被降低。因此，优异的 平坦度和结晶性，ZnO层确保器件具有高MR比，并且还可以具有最适合于器件的面积电阻率AR。