公开(公告)号：US20090291536A1

公开(公告)日：2009-11-26

申请号：US12534176

申请日：2009-08-03

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US07608490B2

公开(公告)日：2009-10-27

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

摘要翻译： 为了提供具有高操作性能和高可靠性的电路的半导体器件，并且提高了半导体器件的可靠性，从而提高了具有该半导体器件的电子器件的可靠性。 上述目的是通过在沿一个方向扫描的同时，通过照射连续波激光束或重复频率为10MHz或更高的脉冲激光束来结合半导体层结晶步骤来实现的; 使用光掩模或包含由衍射光栅图案形成的辅助图案或具有降低光强度功能的半透射膜的吸收体的光刻步骤; 以及对具有低电子温度的高密度等离子体对半导体膜，绝缘膜或导电膜的表面进行氧化，氮化或表面改性的步骤。

公开(公告)号：US07579220B2

公开(公告)日：2009-08-25

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US20060275710A1

公开(公告)日：2006-12-07

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： G03F7/26

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

公开(公告)号：US20060261336A1

公开(公告)日：2006-11-23

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

公开(公告)号：US20110298362A1

公开(公告)日：2011-12-08

申请号：US13211815

申请日：2011-08-17

申请人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

发明人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

IPC分类号： H01J1/62

CPC分类号： H01L27/3276 ,  H01L27/12

摘要： A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween.

摘要翻译： 具有高清晰度的显示装置，其中由于TFT的特性变化引起的布线中的电压降或显示不均匀性引起的显示不均匀性被抑制。 本发明的显示装置包括用于传输视频信号的第一布线和用于向发光元件提供电流的第二布线。 第一布线和第二布线彼此平行地延伸，并且形成为至少部分地彼此重叠，并且隔着绝缘层。

公开(公告)号：US07554265B2

公开(公告)日：2009-06-30

申请号：US11159351

申请日：2005-06-23

申请人： Hiromichi Godo ,  Tomoe Matsubara ,  Masayuki Sakakura

发明人： Hiromichi Godo ,  Tomoe Matsubara ,  Masayuki Sakakura

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L51/5262 ,  H01L27/3244

摘要： An active matrix display device which can easily improve the viewing angle characteristics. In the active matrix display device where light is emitted in the direction of a substrate over which thin film transistors are formed, when focusing on the multiple interference caused by the light emitted from a light-emitting element, which is reflected on the film used for forming the thin film transistors, effect on the multiple interference can be drastically reduced by forming the reflecting film to have the substantial optical thickness of λ/2, without losing the function of the thin film transistor.

摘要翻译： 一种可以容易地改善视角特性的有源矩阵显示装置。 在形成有薄膜晶体管的基板的方向上发光的有源矩阵型显示装置中，当聚焦在由发光元件发出的光所引起的多重干涉下，该发光元件反射在用于 形成薄膜晶体管时，通过将反射膜形成为具有实质的λ/ 2的光学厚度，可以显着降低对多重干涉的影响，而不损失薄膜晶体管的功能。

公开(公告)号：US20120162051A1

公开(公告)日：2012-06-28

申请号：US13413687

申请日：2012-03-07

申请人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

发明人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

IPC分类号： G09G3/30

CPC分类号： H01L27/3276 ,  H01L27/12

摘要： A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween.

摘要翻译： 具有高清晰度的显示装置，其中由于TFT的特性变化引起的布线中的电压降或显示不均匀性引起的显示不均匀性被抑制。 本发明的显示装置包括用于传输视频信号的第一布线和用于向发光元件提供电流的第二布线。 第一布线和第二布线彼此平行地延伸，并且形成为至少部分地彼此重叠，并且隔着绝缘层。

公开(公告)号：US20080012800A1

公开(公告)日：2008-01-17

申请号：US11774401

申请日：2007-07-06

申请人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

发明人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

IPC分类号： G09G3/30

CPC分类号： H01L27/3276 ,  H01L27/12

摘要： A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween.

摘要翻译： 具有高清晰度的显示装置，其中由于TFT的特性变化引起的布线中的电压降或显示不均匀性引起的显示不均匀性被抑制。 本发明的显示装置包括用于传输视频信号的第一布线和用于向发光元件提供电流的第二布线。 第一布线和第二布线彼此平行地延伸，并且形成为至少部分地彼此重叠，并且隔着绝缘层。

公开(公告)号：US08674908B2

公开(公告)日：2014-03-18

申请号：US13413687

申请日：2012-03-07

申请人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

发明人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

IPC分类号： G09G3/30

CPC分类号： H01L27/3276 ,  H01L27/12

摘要： A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween.

摘要翻译： 具有高清晰度的显示装置，其中由于TFT的特性变化引起的布线中的电压降或显示不均匀性引起的显示不均匀性被抑制。 本发明的显示装置包括用于传输视频信号的第一布线和用于向发光元件提供电流的第二布线。 第一布线和第二布线彼此平行地延伸，并且形成为至少部分地彼此重叠，并且隔着绝缘层。