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公开(公告)号:US10825542B1
公开(公告)日:2020-11-03
申请号:US16568260
申请日:2019-09-12
Applicant: Silicon Motion Inc.
Inventor: Ching-Hui Lin
Abstract: A method for checking storage units of flash memory of flash memory device includes: writing data into storage units; and performing data read operation to read data from storage units to compare read data with written data to check whether data is correctly written into storage units, and data read operation includes: performing sequential read operation to sequentially select first storage unit and to read data from first storage unit according to serial order numbers; determining whether first storage unit is damaged; accumulating a number of damaged storage units if first storage unit is damaged; determining whether the number of damaged storage units is larger than first threshold number; and exiting sequential read operation and performing random read operation to read data of specific storage unit if the number of damaged storage units is larger than first threshold number.
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公开(公告)号:US20200081641A1
公开(公告)日:2020-03-12
申请号:US16686200
申请日:2019-11-17
Applicant: Silicon Motion, Inc.
Inventor: Tsung-Chieh Yang , Chun-Chieh Kuo , Ching-Hui Lin , Yang-Chih Shen
Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.
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公开(公告)号:US20180267730A1
公开(公告)日:2018-09-20
申请号:US15985718
申请日:2018-05-22
Applicant: Silicon Motion Inc.
Inventor: Tsung-Chieh Yang , Chun-Chieh Kuo , Ching-Hui Lin , Yang-Chih Shen
CPC classification number: G06F3/0634 , G06F3/0604 , G06F3/064 , G06F3/0679 , G06F12/0246 , G06F2212/7201 , G06F2212/7206 , G11C11/5628 , G11C11/5642 , Y02D10/13
Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode.
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公开(公告)号:US20240152288A1
公开(公告)日:2024-05-09
申请号:US18412635
申请日:2024-01-15
Applicant: Silicon Motion, Inc.
Inventor: Tsung-Chieh Yang , Chun-Chieh Kuo , Ching-Hui Lin , Yang-Chih Shen
CPC classification number: G06F3/0634 , G06F3/0604 , G06F3/064 , G06F3/0679 , G06F12/0246 , G11C11/5628 , G11C11/5642 , G06F2212/7201 , G06F2212/7206 , Y02D10/00
Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.
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15.
公开(公告)号:US11809328B2
公开(公告)日:2023-11-07
申请号:US17581998
申请日:2022-01-24
Applicant: Silicon Motion, Inc.
Inventor: Ken-Fu Hsu , Ching-Hui Lin
IPC: G06F12/1009 , G06F12/06 , G06F3/06 , G06F12/02 , G06F12/0882
CPC classification number: G06F12/1009 , G06F3/064 , G06F3/0614 , G06F3/0631 , G06F3/0644 , G06F3/0652 , G06F3/0679 , G06F12/0246 , G06F12/0615 , G06F12/0882 , G06F2212/7201 , G06F2212/7203
Abstract: The present invention provides a control method of the flash memory controller. In the control method, by establishing a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command from the host device, the flash memory controller can efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone. In addition, after receiving the reset command from the host device, the flash memory controller can use a garbage collection operation or directly put the blocks corresponding to the erased zone into a spare block pool, for the further use.
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16.
公开(公告)号:US20230342055A1
公开(公告)日:2023-10-26
申请号:US18215185
申请日:2023-06-28
Applicant: Silicon Motion, Inc.
Inventor: Ching-Hui Lin
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0604 , G06F3/0631 , G06F3/0656 , G06F3/0679
Abstract: The present invention provides a control method of the flash memory controller. In the control method, after receiving a deallocate command from a host device, the flash memory controller will update a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command, for the flash memory controller to efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone.
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17.
公开(公告)号:US11593008B2
公开(公告)日:2023-02-28
申请号:US17394401
申请日:2021-08-05
Applicant: Silicon Motion, Inc.
Inventor: Ching-Hui Lin
IPC: G06F3/06
Abstract: The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, and the control method includes the steps of: receiving a settling command from a host device to configure a portion space of the flash memory module as a zoned namespace; receiving a write command from the host device to write data corresponding a first zone into a plurality of blocks of the flash memory module, wherein an access mode chose by the flash memory controller is determined based on a size of each zone and a size of each block.
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公开(公告)号:US11487475B2
公开(公告)日:2022-11-01
申请号:US17183355
申请日:2021-02-24
Applicant: Silicon Motion, Inc.
Inventor: Ching-Hui Lin
IPC: G06F3/06 , G06F12/0804 , G11C16/04 , G11C16/10
Abstract: A control method is applied to a flash memory controller, which includes the following steps: creating a write time table, wherein the write time table records block numbers of blocks having data stored therein and corresponding first time and second time; referring to the write time table to determine whether there is at least one first block in the flash memory module whose first time is earlier than a first threshold, and if so, recording the at least one first block into an expired block table; referring to the write time table to determine whether there is at least one second block in the flash memory module whose second time is earlier than a second threshold, and if so, recording the at least one second block into the expired block table; and referring to the expired block table to perform an expired block recycling operation.
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19.
公开(公告)号:US20220317879A1
公开(公告)日:2022-10-06
申请号:US17671603
申请日:2022-02-15
Applicant: Silicon Motion, Inc.
Inventor: Ching-Hui Lin
IPC: G06F3/06
Abstract: The present invention provides a control method of the flash memory controller. In the control method, after receiving a deallocate command from a host device, the flash memory controller will update a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command, for the flash memory controller to efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone.
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20.
公开(公告)号:US11372578B2
公开(公告)日:2022-06-28
申请号:US17199388
申请日:2021-03-11
Applicant: Silicon Motion, Inc.
Inventor: Ching-Hui Lin
IPC: G06F3/06
Abstract: A control method of a flash memory controller, wherein the control method includes the steps of: when data is written to a page of any block of a flash memory module, recording a write time in the page; create a write time table, wherein the write time table records block numbers of blocks having data written therein and corresponding write time; compress the write time table to generate a compressed write time table, wherein the compressed write time table contains multiple time ranges and corresponding indexes, each index corresponds to a page of the flash memory module, and the page records block numbers of all blocks whose writing time is within the corresponding time range.
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