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    MEMORY ELEMENT AND MEMORY DEVICE
    12.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 审中-公开
    存储元件和存储器件

    公开(公告)号：US20160163969A1

    公开(公告)日：2016-06-09

    申请号：US15047311

    申请日：2016-02-18

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Abstract translation: 公开了一种信息存储元件，包括：第一层，其包括具有垂直于膜面的磁化方向的铁磁层; 耦合到所述第一层的绝缘层; 以及耦合到与所述第一层相对的所述绝缘层的第二层，所述第二层包括固定磁化，以便能够用作所述第一层的参考。 第一层能够根据磁性材料的磁化状态存储信息，并且磁化状态被配置为通过自旋注入而改变。 第一层接收的有效抗磁场的大小小于第一层的饱和磁化量。

    Perpendicular magnetization storage element and storage device
    13.
    发明授权
    Perpendicular magnetization storage element and storage device 有权
    垂直磁化存储元件和存储装置

    公开(公告)号：US09356230B2

    公开(公告)日：2016-05-31

    申请号：US14478642

    申请日：2014-09-05

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    IPC: H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

    Abstract: A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

    Abstract translation: 存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础 所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层 。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

    Memory element and memory device
    15.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09257635B2

    公开(公告)日：2016-02-09

    申请号：US14752126

    申请日：2015-06-26

    Applicant: Sony Corporation

    Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: G11C11/00 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    Abstract: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate portion, and a fourth portion adjoining the third portion opposite the second portion. The intermediate portion includes MgO. The third portion includes at least one of Ag, Au, Cr, Cu, Hf, Mo, Nb, Os, Re, Ru, Ta, W, and Zr. The fourth portion includes at least alloy of CoPt, FePt, and Ru.

    Abstract translation: 提供自旋转矩记忆元件和存储器件。 在一个实施例中，自旋转移转矩存储元件包括包括CoFeB的第一部分，包括CoFeB的第二部分，介于第一和第二部分之间的中间部分，邻接与中间部分相对的第二部分的第三部分，以及第四部分 邻接与第二部分相对的第三部分。 中间部分包括MgO。 第三部分包括Ag，Au，Cr，Cu，Hf，Mo，Nb，Os，Re，Ru，Ta，W和Zr中的至少一种。 第四部分至少包括CoPt，FePt和Ru的合金。

    Memory element and memory device
    16.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09224942B2

    公开(公告)日：2015-12-29

    申请号：US14055386

    申请日：2013-10-16

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida

    IPC: G11C11/00 ,  H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

    Abstract: There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.

    Abstract translation: 公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且 除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。

    Storage cell, storage device, and magnetic head
    17.
    发明授权
    Storage cell, storage device, and magnetic head 有权
    存储单元，存储设备和磁头

    公开(公告)号：US09196336B2

    公开(公告)日：2015-11-24

    申请号：US14430478

    申请日：2013-08-22

    Applicant: SONY CORPORATION

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

    IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: G11C11/161 ,  G11B5/3906 ,  G11B5/3909 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Provided is a storage cell that makes it possible to enhance magnetic characteristics of magnetization pinned layer, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. The base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer.

    Abstract translation: 提供了一种存储单元，其使得可以增强包括存储单元的磁化钉扎层，存储装置和磁头的磁特性。 存储单元包括层结构，其包括基底层，存储层，其中磁化方向与信息相对应地变化;磁化固定层，形成在基底层上方并具有垂直于膜表面的磁化; 用作存储在存储层中的信息的参考，以及设置在存储层和磁化固定层之间并由非磁性体制成的中间层。 基层具有钌和具有面心立方晶格的非磁性体的叠层结构，并且钌形成在与磁化固定层相邻的位置处。

    MEMORY ELEMENT AND MEMORY APPARATUS WITH A PLURALITY OF MAGNETIC LAYERS AND AN OXIDE LAYER
    18.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS WITH A PLURALITY OF MAGNETIC LAYERS AND AN OXIDE LAYER 有权
    具有大量磁性层和氧化层的存储元件和存储器件

    公开(公告)号：US20150303375A1

    公开(公告)日：2015-10-22

    申请号：US14730700

    申请日：2015-06-04

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

    Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

    Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。

    Memory element and memory apparatus
    19.
    发明授权
    Memory element and memory apparatus 有权
    存储器元件和存储器件

    公开(公告)号：US08976578B2

    公开(公告)日：2015-03-10

    申请号：US13675725

    申请日：2012-11-13

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/161 ,  Y10S977/933 ,  Y10S977/935

    Abstract: A memory element has a layered configuration, including a memory layer in which a magnetization direction is changed corresponding to information; the magnetization direction being changed by applying a current in a lamination direction of the layered configuration to record the information in the memory layer, a magnetization-fixed layer in which a magnetization direction is fixed, an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, and a perpendicular magnetic anisotropy inducing layer, the memory layer including a first ferromagnetic layer, a first bonding layer, a second ferromagnetic layer, a second bonding layer and a third ferromagnetic layer laminated in the stated order.

    Abstract translation: 存储元件具有分层结构，包括其中磁化方向根据信息而改变的存储层; 通过在分层结构的叠层方向上施加电流来改变磁化方向，以将信息记录在存储层中，磁化方向固定的磁化固定层，由非磁性材料形成的中间层 材料，并且设置在存储层和磁化固定层之间，以及垂直磁各向异性诱导层，所述存储层包括第一铁磁层，第一结合层，第二铁磁层，第二结合层和第三铁磁性层 层以所述顺序层压。

    MEMORY ELEMENT AND MEMORY APPARATUS
    20.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS 有权
    记忆元素和记忆装置

    公开(公告)号：US20140346626A1

    公开(公告)日：2014-11-27

    申请号：US14456429

    申请日：2014-08-11

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: H01L43/10

    CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.

    Abstract translation: 根据一些方面，分层结构包括存储层，磁化固定层和隧道绝缘层。 存储层具有垂直于膜面的磁化，其中通过在分层结构的层叠方向上施加电流，磁化方向被配置为根据信息而被改变。 磁化固定层具有与存储层的磁化方向平行或反平行的磁化，并且包括包括多个铁磁层和一个或多个非磁性层的层叠铁极化结构，并且包括包含反铁磁性材料的层 位于第一铁磁层和非磁性层之间的多个铁磁层的第一铁磁层。 隧道绝缘层位于存储层和磁化固定层之间。

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