公开(公告)号：US20110070724A1

公开(公告)日：2011-03-24

申请号：US12563764

申请日：2009-09-21

申请人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

发明人： Jiping Li ,  Aaron Muir Hunter ,  Bruce E. Adams ,  Theodore Moffitt ,  Stephen Moffatt

IPC分类号： H01L21/26

CPC分类号： H01L21/26513 ,  H01L21/26566 ,  H01L21/2658

摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

摘要翻译： 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

公开(公告)号：US09557111B2

公开(公告)日：2017-01-31

申请号：US13204068

申请日：2011-08-05

申请人： Stephen Moffatt ,  Aaron Muir Hunter

发明人： Stephen Moffatt ,  Aaron Muir Hunter

IPC分类号： F27D5/00

CPC分类号： F27D21/00 ,  F27D5/0037 ,  F27D2021/0078 ,  H01L21/67115

摘要： A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.

摘要翻译： 公开了半导体衬底退火的方法和装置。 该装置具有退火能量源和衬底支撑件，其中屏蔽构件设置在退火能量源和衬底支撑件之间。 屏蔽构件是具有大于在基板支撑件上处理的基板的尺寸的基本上平坦的构件，窗口覆盖基本平坦的构件中的中心开口。 中心开口具有气体入口入口和气体出口入口，每个入口入口和气体出口通道分别与气体入口气室和气体出口增压室流体连通。 连接构件设置在中心开口周围并将窗口保持在中心开口的上方。 连接构件中的连接开口分别通过气体入口导管和通过连接构件形成的气体出口导管与气体入口气室和气体出口增压室流体连通。

公开(公告)号：US20110239421A1

公开(公告)日：2011-10-06

申请号：US13076231

申请日：2011-03-30

申请人： Leonid M. Tertitski ,  Krishna Kumar Kuttannair ,  Aaron Muir Hunter ,  Stephen Moffatt

发明人： Leonid M. Tertitski ,  Krishna Kumar Kuttannair ,  Aaron Muir Hunter ,  Stephen Moffatt

IPC分类号： H01L21/00 ,  B23K26/08

CPC分类号： B23K26/127 ,  B23K26/0006 ,  B23K26/0823 ,  B23K26/0876 ,  B23K26/12 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/52 ,  B23K2103/56 ,  Y10T29/41

摘要： A method and apparatus for targeting a beam of radiation is provided. A beam steering mirror and a beam capture mirror are movably disposed along an optical pathway. A controller moves the beam steering mirror and the beam capture mirror in an x-y plane, and rotates the mirrors, to target the beam to a target location on a surface, while keeping the optical path length substantially constant for all target locations on the surface. The surface is rotated by a rotational actuator to bring all target locations to positions accessible by the beam targeting optics. Imprecision in targeting and optical path length may be compensated by providing an actuated aperture at the beam entry point and/or a variable focus lens with an optical range finding detector, all in communication with the controller.

摘要翻译： 提供了一种用于瞄准辐射束的方法和装置。 光束导向镜和光束捕获镜沿着光学路径可移动地设置。 控制器将光束导向反射镜和光束捕获镜移动到x-y平面中，并且使反射镜旋转以将光束瞄准到表面上的目标位置，同时保持光学表面上的所有目标位置的光程长度基本恒定。 该表面由旋转致动器旋转以将所有目标位置移动到由光束瞄准光学器件接近的位置。 可以通过在光束入口点处提供致动孔径和/或具有光学测距探测器的可变焦距透镜来全部与控制器通信来补偿瞄准和光路长度的不精确性。

公开(公告)号：US20120145684A1

公开(公告)日：2012-06-14

申请号：US13401526

申请日：2012-02-21

申请人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

发明人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

IPC分类号： B23K26/00 ,  B23K26/10 ,  F27D11/12

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

摘要： Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

摘要翻译： 公开了用于对基板的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

公开(公告)号：US20070212859A1

公开(公告)日：2007-09-13

申请号：US11459856

申请日：2006-07-25

申请人： Paul CAREY ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

发明人： Paul CAREY ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

IPC分类号： H01L21/268

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

摘要： The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

摘要翻译： 本发明总体上描述了一种更多的用于对基材的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

公开(公告)号：US10141191B2

公开(公告)日：2018-11-27

申请号：US12855652

申请日：2010-08-12

申请人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

发明人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

IPC分类号： H01L21/324 ,  H01L21/265 ,  H01L21/268 ,  H01L29/06 ,  H01L29/66 ,  H01L21/67 ,  H01L21/8234

摘要： The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

公开(公告)号：US08518838B2

公开(公告)日：2013-08-27

申请号：US13401526

申请日：2012-02-21

申请人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

发明人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

IPC分类号： H01L21/00

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

摘要： Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

摘要翻译： 公开了用于对基板的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

公开(公告)号：US20120214112A1

公开(公告)日：2012-08-23

申请号：US13204068

申请日：2011-08-05

申请人： Stephen Moffatt ,  Aaron Muir Hunter

发明人： Stephen Moffatt ,  Aaron Muir Hunter

IPC分类号： F27D5/00

CPC分类号： F27D21/00 ,  F27D5/0037 ,  F27D2021/0078 ,  H01L21/67115

摘要： A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.

摘要翻译： 公开了半导体衬底退火的方法和装置。 该装置具有退火能量源和衬底支撑件，其中屏蔽构件设置在退火能量源和衬底支撑件之间。 屏蔽构件是具有大于在基板支撑件上处理的基板的尺寸的基本上平坦的构件，窗口覆盖基本平坦的构件中的中心开口。 中心开口具有气体入口入口和气体出口入口，每个入口入口和气体出口通道分别与气体入口气室和气体出口增压室流体连通。 连接构件设置在中心开口周围并将窗口保持在中心开口的上方。 连接构件中的连接开口分别通过气体入口导管和通过连接构件形成的气体出口导管与气体入口气室和气体出口增压室流体连通。

公开(公告)号：US08692151B2

公开(公告)日：2014-04-08

申请号：US13076231

申请日：2011-03-30

申请人： Leonid M. Tertitski ,  Krishna Kumar Kuttannair ,  Aaron Muir Hunter ,  Stephen Moffatt

发明人： Leonid M. Tertitski ,  Krishna Kumar Kuttannair ,  Aaron Muir Hunter ,  Stephen Moffatt

IPC分类号： H01L21/00

CPC分类号： B23K26/127 ,  B23K26/0006 ,  B23K26/0823 ,  B23K26/0876 ,  B23K26/12 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/52 ,  B23K2103/56 ,  Y10T29/41

摘要： A method and apparatus for targeting a beam of radiation is provided. A beam steering mirror and a beam capture mirror are movably disposed along an optical pathway. A controller moves the beam steering mirror and the beam capture mirror in an x-y plane, and rotates the mirrors, to target the beam to a target location on a surface, while keeping the optical path length substantially constant for all target locations on the surface. The surface is rotated by a rotational actuator to bring all target locations to positions accessible by the beam targeting optics. Imprecision in targeting and optical path length may be compensated by providing an actuated aperture at the beam entry point and/or a variable focus lens with an optical range finding detector, all in communication with the controller.

摘要翻译： 提供了一种用于瞄准辐射束的方法和装置。 光束导向镜和光束捕获镜沿着光学路径可移动地设置。 控制器将光束导向反射镜和光束捕获镜移动到x-y平面中，并且使反射镜旋转以将光束瞄准到表面上的目标位置，同时保持光学表面上的所有目标位置的光程长度基本恒定。 该表面由旋转致动器旋转以将所有目标位置移动到由光束瞄准光学器件接近的位置。 可以通过在光束入口点处提供致动孔径和/或具有光学测距探测器的可变焦距透镜来全部与控制器通信来补偿瞄准和光路长度的不精确性。

公开(公告)号：US20100323532A1

公开(公告)日：2010-12-23

申请号：US12855652

申请日：2010-08-12

申请人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

发明人： Paul Carey ,  Aaron Muir Hunter ,  Dean Jennings ,  Abhilash J. Mayur ,  Stephen Moffatt ,  William Schaffer ,  Timothy N. Thomas ,  Mark Yam

IPC分类号： H01L21/477

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/6659 ,  H01L29/66659

摘要： The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

摘要翻译： 本发明总体上描述了一种更多的用于对基材的期望区域进行退火处理的方法。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂 基底的区域和/或激活基底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。