公开(公告)号：US10170657B2

公开(公告)日：2019-01-01

申请号：US14945708

申请日：2015-11-19

申请人： SUNPOWER CORPORATION

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US20180138328A1

公开(公告)日：2018-05-17

申请号：US15349944

申请日：2016-11-11

申请人： SUNPOWER CORPORATION

发明人： Yu-Chen Shen ,  Périne Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0304 ,  H01L31/0236

CPC分类号： H01L31/02168 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/547

摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

公开(公告)号：US20210249551A1

公开(公告)日：2021-08-12

申请号：US17183164

申请日：2021-02-23

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US20190273467A1

公开(公告)日：2019-09-05

申请号：US16298801

申请日：2019-03-11

申请人： SunPower Corporation

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.