公开(公告)号：US20210249551A1

公开(公告)日：2021-08-12

申请号：US17183164

申请日：2021-02-23

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US10164567B2

公开(公告)日：2018-12-25

申请号：US15230182

申请日：2016-08-05

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H01L31/049 ,  H01L31/05 ,  H02S40/32 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/18 ,  H02S30/10 ,  H02S40/36 ,  H02J3/38 ,  H02J3/46

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

公开(公告)号：US11605750B2

公开(公告)日：2023-03-14

申请号：US17183164

申请日：2021-02-23

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US20190131477A1

公开(公告)日：2019-05-02

申请号：US16230968

申请日：2018-12-21

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/0745 ,  H01L31/0216 ,  H01L31/072 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/0224 ,  H01L31/068

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US10170657B2

公开(公告)日：2019-01-01

申请号：US14945708

申请日：2015-11-19

申请人： SUNPOWER CORPORATION

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US10957809B2

公开(公告)日：2021-03-23

申请号：US16692890

申请日：2019-11-22

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US09774294B2

公开(公告)日：2017-09-26

申请号：US15240913

申请日：2016-08-18

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H01L31/042 ,  H02S40/32 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/18 ,  H01L31/049 ,  H02S30/10 ,  H02S40/36 ,  H02J3/38 ,  H02J3/46

CPC分类号： H02S40/32 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/048 ,  H01L31/049 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/18 ,  H02J3/383 ,  H02J3/46 ,  H02S30/10 ,  H02S40/36 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52 ,  Y02E10/547 ,  Y10T29/49117

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

公开(公告)号：US10903786B2

公开(公告)日：2021-01-26

申请号：US16196340

申请日：2018-11-20

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Denis De Ceuster ,  Vikas Desai ,  Douglas H. Rose ,  David D. Smith ,  Neil Kaminar

IPC分类号： H02S40/32 ,  H02S40/36 ,  H02S30/10 ,  H01L31/0224 ,  H01L31/049 ,  H01L31/0216 ,  H01L31/18 ,  H02J3/46 ,  H01L31/05 ,  H01L31/048 ,  H02J3/38

摘要： In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

公开(公告)号：US20200091366A1

公开(公告)日：2020-03-19

申请号：US16692890

申请日：2019-11-22

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US09224902B2

公开(公告)日：2015-12-29

申请号：US14229609

申请日：2014-03-28

申请人： SunPower Corporation

发明人： Richard M. Swanson

IPC分类号： H01L31/028 ,  H01L31/18 ,  H01L31/074 ,  H01L31/0352 ,  H01L31/061

CPC分类号： H01L31/18 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/061 ,  H01L31/074 ,  Y02E10/50

摘要： A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.

摘要翻译： 具有硅衬底的硅太阳能电池在衬底的表面上包括p型和n型发射体，发射体是掺杂的硅纳米颗粒。 为了减少衬底表面的高界面复合，纳米颗粒发射体优选地形成在衬底表面上的薄界面隧道氧化物层上。