公开(公告)号：US20220246756A1

公开(公告)日：2022-08-04

申请号：US17162161

申请日：2021-01-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Gulbagh SINGH ,  Kun-Tsang CHUANG

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/10

摘要： A semiconductor structure includes a substrate assembly and a semiconductor device. The semiconductor device is formed on the substrate assembly, and includes a body region, two active regions, and a butted body. The active regions are disposed at two opposite sides of the body region, and both have a first type conductivity. The body region and the active regions together occupy on a surface region of the substrate assembly. The butted body has a second type conductivity different from the first type conductivity, and is located on the surface region of the substrate assembly so as to permit the body region to be tied to one of the active regions through the butted body.

公开(公告)号：US20190148322A1

公开(公告)日：2019-05-16

申请号：US16231844

申请日：2018-12-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Gulbagh SINGH ,  Chih-Ming LEE ,  Chi-Yen LIN ,  Wen-Chang KUO ,  C. C. LIU

IPC分类号： H01L23/00 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L23/58 ,  H01L21/78 ,  H01L23/544 ,  G06F17/50 ,  H01L29/06

摘要： A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.

公开(公告)号：US20180315723A1

公开(公告)日：2018-11-01

申请号：US15642837

申请日：2017-07-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Gulbagh SINGH ,  Chih-Ming LEE ,  Chi-Yen LIN ,  Wen-Chang KUO ,  C. C. LIU

IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L23/58 ,  H01L23/528 ,  H01L21/78 ,  H01L23/544 ,  G06F17/50 ,  H01L29/06

CPC分类号： H01L24/06 ,  G06F17/5072 ,  G06F17/5081 ,  H01L21/78 ,  H01L22/34 ,  H01L23/3114 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/525 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/5329 ,  H01L23/544 ,  H01L23/562 ,  H01L23/585 ,  H01L24/03 ,  H01L29/0649 ,  H01L2223/5446 ,  H01L2224/02311 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/03614 ,  H01L2224/03827 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/061 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/3512 ,  H01L2924/35121

摘要： A method of fabricating a semiconductor device includes forming a first contact pad and a second contact pad over a first passivation layer, depositing a first buffer layer over the first contact pad and the second contact pad, and depositing a second buffer layer over the first buffer layer and the second contact pad. The first contact pad is in a circuit region and the second contact pad is in a non-circuit region. An edge of the second contact pad is exposed and a periphery of the first contact pad and an edge of the second contact pad are covered by the first buffer layer.