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    IN-CHIP THERMOELECTRIC DEVICE
    11.
    发明申请
    IN-CHIP THERMOELECTRIC DEVICE 有权

    公开(公告)号：US20220336723A1

    公开(公告)日：2022-10-20

    申请号：US17393345

    申请日：2021-08-03

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Jen-Yuan Chang

    IPC分类号： H01L35/28 ,  H01L35/10 ,  H01L23/498 ,  G01K7/02

    摘要： An semiconductor device includes a substrate having a first surface and a second surface opposite the first surface, and a through-silicon via structure extending through the substrate. The through-silicon via structure includes a first through-silicon via containing a first conductivity type material and a second through-silicon via containing a second conductivity type material opposite the first conductivity type material. The semiconductor device also includes a first conductive layer on the first surface of the substrate and electrically coupled to a first end of the first through-silicon via and a first end of the second through-silicon via. The semiconductor device also includes a second conductive on the second surface and having a first portion coupled to a second end of the first through-silicon via and a second portion coupled to a second end of the second through-silicon via.

    Guard ring and manufacturing method thereof
    13.
    发明授权
    Guard ring and manufacturing method thereof 有权

    公开(公告)号：US12087709B2

    公开(公告)日：2024-09-10

    申请号：US17446235

    申请日：2021-08-27

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Jen-Yuan Chang

    IPC分类号： H01L23/58 ,  H01L21/768 ,  H01L23/48

    CPC分类号： H01L23/585 ,  H01L21/76816 ,  H01L21/76898 ,  H01L23/481 ,  H01L2221/1057

    摘要： Some implementations described herein provide an electronic device. The electronic device includes a first conductive structure that extends through a dielectric structure of the electronic device and into a substrate of the electronic device. The electronic device includes a guard ring, having multiple layers, that extends along one or more sides of a first vertical portion of the first conductive structure. The electronic device includes a second conductive structure that extends along a second vertical portion of the first conductive structure, where the second conductive structure includes a conductive structure side surface, which is nearest to a side surface of the first conductive structure, that is a distance from the side surface of the first conductive structure, and where the distance is greater than or equal to approximately 5% of a width of the first conductive structure.

    PICK-AND-PLACE TOOL WITH WARPAGE-CORRECTION MECHANISM
    14.
    发明公开
    PICK-AND-PLACE TOOL WITH WARPAGE-CORRECTION MECHANISM 审中-公开

    公开(公告)号：US20240087943A1

    公开(公告)日：2024-03-14

    申请号：US18171315

    申请日：2023-02-17

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Jen-Yuan Chang

    IPC分类号： H01L21/683 ,  H01L21/304 ,  H01L21/67

    CPC分类号： H01L21/6838 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/67121 ,  H01L21/67253 ,  H01L21/67259

    摘要： A suction head of a pick-and-place tool for semiconductor device packaging is provided. The suction head includes: a suction unit configured to apply a suction force on a top die and pick the top die; and a warpage-correction mechanism. The warpage-correction mechanism includes a pushing mechanism, and the pushing mechanism includes a plurality of pushing units, each of the plurality of pushing units disposed in a corner region of the suction head. Each of the plurality of pushing units includes: a tubular chamber extending vertically relative to a bottom surface of the suction head; and a pusher disposed in the tubular chamber and in air-tight contact with a side wall of the tubular chamber. The pusher is movable vertically and capable of protruding out of the bottom surface of the suction head to push a corner region of the top die and apply a downward force thereon.

    EMBEDDED SILICON PHOTONICS CHIP IN A MULTI-DIE PACKAGE
    18.
    发明申请
    EMBEDDED SILICON PHOTONICS CHIP IN A MULTI-DIE PACKAGE 有权

    公开(公告)号：US20220357538A1

    公开(公告)日：2022-11-10

    申请号：US17697822

    申请日：2022-03-17

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Jen-Yuan Chang

    IPC分类号： G02B6/43 ,  G02B6/42

    摘要： A semiconductor package includes a base substrate structure having a top surface that includes conductive regions disposed in a dielectric region. The conductive regions are coupled to an interconnect structure. The semiconductor package also includes a first die bonded sideways on the base substrate structure. A side surface at an edge of the first die is bonded to the top surface of the base substrate structure. A front surface of the first die is perpendicular to the top surface of the base substrate structure. The first die includes a photonic device on a substrate of the first die, and the substrate includes an optical interface for coupling a back surface of the first die to an optical fiber.

    Pick-and-place system with a stabilizer
    19.
    发明授权
    Pick-and-place system with a stabilizer 有权

    公开(公告)号：US12027403B2

    公开(公告)日：2024-07-02

    申请号：US17700497

    申请日：2022-03-22

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Jen-Yuan Chang

    IPC分类号： H01L21/68 ,  B65G47/90 ,  B65G47/91 ,  H01L21/67 ,  H01L21/683

    CPC分类号： H01L21/681 ,  B65G47/905 ,  B65G47/91 ,  H01L21/67121 ,  H01L21/6838

    摘要： A pick-and-place system is provided. The pick-and-place system includes: a wafer holder configured to hold a bottom die; a gantry having a stabilizer extending downwardly; a primary drive mechanism connected to the gantry and configured to drive the gantry horizontally and vertically; a suction head configured to hold a top die; and a secondary drive mechanism located at the gantry and connected to the suction head and configured to drive the suction head horizontally and vertically to place the top die on the bottom die at a target position. The primary drive mechanism drives the gantry vertically until the stabilizer is in contact with the bottom die before the secondary drive mechanism drives the suction head.