公开(公告)号：US11430611B2

公开(公告)日：2022-08-30

申请号：US17165229

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Yuuki Aburakawa ,  Tatsuo Namikawa ,  Akiyasu Iioka ,  Atsuo Matsutani ,  Hitoshi Saita ,  Kazuhiro Yoshikawa

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/012 ,  H01G4/30 ,  H01L23/498 ,  H01L23/64 ,  H05K1/16

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

公开(公告)号：US11367626B2

公开(公告)日：2022-06-21

申请号：US16499501

申请日：2018-03-16

Applicant: TDK CORPORATION

Inventor： Mitsuhiro Tomikawa ,  Kazuhiro Yoshikawa ,  Koichi Tsunoda ,  Kenichi Yoshida

IPC: H01L21/48 ,  H05K1/16 ,  H05K3/40 ,  H05K3/46 ,  H05K1/18

Abstract: A first insulating layer, a conductor layer included on a first main surface, an electronic component included on the first main surface and a second insulating layer stacked on the first insulating layer are included, a stacking direction of the first insulating layer and the second insulating layer is the same as a stacking direction of a first electrode layer, a second electrode layer, and the dielectric layer in the electronic component, and a height position of a main surface of the electronic component on an opposite side from a side of the first main surface is different from a height position of a main surface of the conductor layer adjacent to the electronic component on an opposite side from a side of the first main surface in the stacking direction.

公开(公告)号：US11195661B2

公开(公告)日：2021-12-07

申请号：US16294139

申请日：2019-03-06

Applicant: TDK Corporation

Inventor： Michihiro Kumagae ,  Kazuhiro Yoshikawa ,  Kenichi Yoshida ,  Junki Nakamoto ,  Norihiko Matsuzaka

IPC: H01G4/30 ,  H01G4/33 ,  H01G4/012 ,  H01G4/232 ,  H01G4/12 ,  H01G4/008

Abstract: Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.

公开(公告)号：US10319524B2

公开(公告)日：2019-06-11

申请号：US15725654

申请日：2017-10-05

Applicant: TDK CORPORATION

Inventor： Kenichi Yoshida ,  Kazuhiro Yoshikawa ,  Michihiro Kumagae ,  Norihiko Matsuzaka ,  Junki Nakamoto

IPC: H01G4/30 ,  H01G4/232 ,  H01G4/33 ,  H01L23/522 ,  H01L27/01 ,  H01L49/02

Abstract: A thin-film capacitor includes electrode layers stacked in a stacking direction; dielectric layers stacked between the electrode layers; an opening portion that includes a side surface penetrating at least a part of the electrode layers and at least a part of the dielectric layers in the stacking direction from a top side and a bottom surface exposing one of the electrode layers; and a wiring portion disposed in the opening portion to be separated from the side surface of the opening portion, and electrically connected to the electrode layer exposed from the bottom surface of the opening portion. The dielectric layer that is stacked immediately on the electrode layer exposed from the bottom surface of the opening portion among the dielectric layers includes an extension portion extending in the opening portion from the side surface of the opening portion to the wiring portion side.

公开(公告)号：US11545303B2

公开(公告)日：2023-01-03

申请号：US17143581

申请日：2021-01-07

Applicant: TDK CORPORATION

Inventor： Kazuhiro Yoshikawa ,  Kenichi Yoshida ,  Takashi Ohtsuka ,  Yuichiro Okuyama ,  Takeshi Oohashi ,  Hajime Kuwajima

IPC: H01G4/30 ,  H01G4/012 ,  H01G4/08

Abstract: Disclosed herein is an electronic component that includes a substrate; and a plurality of conductive layers and a plurality of insulating layers which are alternately laminated on the substrate. The side surface of a predetermined one of the plurality of insulating layers has a recessed part set back from a side surface of the substrate and a projecting part projecting from the recessed part. The recessed part is covered with a first dielectric film made of an inorganic insulating material.

公开(公告)号：US11357110B2

公开(公告)日：2022-06-07

申请号：US17132626

申请日：2020-12-23

Applicant: TDK Corporation

Inventor： Takeshi Oohashi ,  Shinichiro Toda ,  Daiki Kusunoki ,  Takashi Ohtsuka ,  Kazuhiro Yoshikawa ,  Kenichi Yoshida

IPC: H05K1/16 ,  H01G4/228 ,  H01G4/33 ,  H01G4/40 ,  H01L49/02

Abstract: Disclosed herein is an electronic component that includes a first conductive layer including a lower electrode and a first inductor pattern, a dielectric film that covers the lower electrode, an upper electrode laminated on the lower electrode through the dielectric film, an insulating layer that covers the first conductive layer, dielectric film, and upper electrode, and a second conductive layer formed on the insulating layer and including a second inductor pattern. The first and second inductor patterns are connected in parallel through via conductors penetrating the insulating layer.

公开(公告)号：US11240908B2

公开(公告)日：2022-02-01

申请号：US16665503

申请日：2019-10-28

Applicant: TDK Corporation

Inventor： Kazuhiro Yoshikawa ,  Yuuki Aburakawa ,  Tatsuo Namikawa ,  Kenichi Yoshida ,  Hitoshi Saita

IPC: H05K1/00 ,  H05K1/02 ,  H05K1/11 ,  H05K1/16

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.

公开(公告)号：US11114249B2

公开(公告)日：2021-09-07

申请号：US16483516

申请日：2018-02-13

Applicant: TDK Corporation

Inventor： Koichi Tsunoda ,  Mitsuhiro Tomikawa ,  Kazuhiro Yoshikawa ,  Kenichi Yoshida

IPC: H01G4/33 ,  H01G4/012 ,  H01G4/252 ,  H01G4/30

Abstract: In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.

公开(公告)号：US20210265116A1

公开(公告)日：2021-08-26

申请号：US17165229

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Yuuki ABURAKAWA ,  Tatsuo Namikawa ,  Akiyasu Iioka ,  Atsuo Matsutani ,  Hitoshi Saita ,  Kazuhiro Yoshikawa

IPC: H01G4/33 ,  H01G4/30 ,  H01G4/012 ,  H05K1/16 ,  H01L23/64 ,  H01L23/498 ,  H01G4/008

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

公开(公告)号：US10950389B2

公开(公告)日：2021-03-16

申请号：US16360405

申请日：2019-03-21

Applicant: TDK CORPORATION

Inventor： Daiki Ishii ,  Kazuhiro Yoshikawa ,  Koichi Tsunoda ,  Mitsuhiro Tomikawa ,  Junki Nakamoto ,  Kenichi Yoshida

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/12

Abstract: A thin-film capacitor satisfies a relationship of CTE1>CTE2>CTE3 regarding a linear expansion coefficient CTE1 of a base, a linear expansion coefficient CTE2 of a capacitance unit, and a linear expansion coefficient CTE3 of a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.