Thin film capacitor and manufacturing method thereof

    公开(公告)号:US11114248B2

    公开(公告)日:2021-09-07

    申请号:US16354373

    申请日:2019-03-15

    Abstract: A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.

    Multilayer capacitor
    2.
    发明授权

    公开(公告)号:US11631541B2

    公开(公告)日:2023-04-18

    申请号:US17207212

    申请日:2021-03-19

    Abstract: Disclosed herein is a multilayer capacitor that includes a capacitor layer having a plurality of odd-numbered electrode layers which are positioned at odd-numbered rows and a plurality of even-numbered electrode layers which are positioned at even-numbered rows. The capacitor layer includes a first side surface to which the odd-numbered electrode layers are exposed, a second side surface to which the even-numbered electrode layers are exposed, and a first planar region. The first external terminal covers the first side surface so as to be connected to the odd-numbered electrode layers. The second external terminal covers the second side surface so as to be connected to the even-numbered electrode layers. The first external terminal covers also the first planar region and is connected to the first internal electrode layer through a first via conductor extending in a stacking direction.

    Thin-film capacitor
    6.
    发明授权

    公开(公告)号:US10950389B2

    公开(公告)日:2021-03-16

    申请号:US16360405

    申请日:2019-03-21

    Abstract: A thin-film capacitor satisfies a relationship of CTE1>CTE2>CTE3 regarding a linear expansion coefficient CTE1 of a base, a linear expansion coefficient CTE2 of a capacitance unit, and a linear expansion coefficient CTE3 of a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.

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