公开(公告)号：US20180301284A1

公开(公告)日：2018-10-18

申请号：US15938616

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Takeshi SHIBAHARA ,  Yuki NAGAMINE ,  Yoshitomo TANAKA ,  Kumiko YAMAZAKI

IPC: H01G4/33 ,  H01L49/02 ,  H01G4/08 ,  C01B21/082

CPC classification number: H01G4/33 ,  C01B21/0821 ,  C01P2002/60 ,  C01P2002/78 ,  C01P2006/40 ,  C04B35/495 ,  C04B35/58007 ,  C04B35/6262 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/781 ,  C04B2235/787 ,  H01G4/085 ,  H01G4/1218 ,  H01G4/1272 ,  H01G4/306 ,  H01L28/55

Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

公开(公告)号：US20180286585A1

公开(公告)日：2018-10-04

申请号：US15938730

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Yuji UMEDA ,  Kumiko YAMAZAKI

IPC: H01G4/12 ,  C04B35/495 ,  C04B35/626 ,  C04B35/64 ,  C04B35/634

CPC classification number: H01G4/1254 ,  C04B35/495 ,  C04B35/6262 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/63416 ,  C04B35/64 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3895 ,  C04B2235/602 ,  C04B2235/606 ,  C04B2235/6567 ,  C04B2235/77 ,  H01G4/085 ,  H01G4/1209 ,  H01G4/1227 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/55

Abstract: A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)1-xM(2)x)(M(3)1-yM(4)y)(O1-zNz)3. 0≤x≤1, 0≤y≤1, and 0