公开(公告)号：US20190202744A1

公开(公告)日：2019-07-04

申请号：US16074406

申请日：2017-02-01

Applicant: TDK CORPORATION ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Kumiko YAMAZAKI ,  Yuki NAGAMINE ,  Takeshi SHIBAHARA ,  Shinichi KIKKAWA ,  Yuji MASUBUCHI

IPC: C04B35/58 ,  H01B3/12

Abstract: To provide a dielectric porcelain composition and an electronic component that demonstrate ferroelectricity. A dielectric porcelain composition that is characterized by having a perovskite-type oxynitride as a principal component and by including a polycrystalline body that demonstrates ferroelectricity.

公开(公告)号：US20180282228A1

公开(公告)日：2018-10-04

申请号：US15938344

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Takeshi SHIBAHARA ,  Yuki NAGAMINE ,  Kumiko YAMAZAKI

IPC: C04B35/58 ,  H01L49/02 ,  H01B3/10 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/622

CPC classification number: C04B35/58007 ,  C04B35/462 ,  C04B35/495 ,  C04B35/58014 ,  C04B35/62218 ,  C04B35/6262 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/63416 ,  C04B35/64 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3886 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/768 ,  H01B3/10 ,  H01G4/085 ,  H01G4/1218 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/55

Abstract: A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein “A” is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, “B” is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

公开(公告)号：US20230027057A1

公开(公告)日：2023-01-26

申请号：US17858566

申请日：2022-07-06

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Shuto KANO ,  Yuji UMEDA ,  Hiroki KITAMURA ,  Takeshi SHIBAHARA ,  Junichi YAMAZAKI

IPC: H01G4/33 ,  H01G4/20

Abstract: An amorphous dielectric includes a compound represented by A1+αBOxNy. −0.3≤α≤0.3, 0

公开(公告)号：US20220165502A1

公开(公告)日：2022-05-26

申请号：US17521305

申请日：2021-11-08

Applicant: TDK CORPORATION

Inventor： Toshihiro IGUCHI ,  Masahide ISHIZUYA ,  Takeshi SHIBAHARA

IPC: H01G4/30

Abstract: To provide a multilayer electronic component of which a reliability is not compromised and also a crack is suppressed from forming even when the multilayer electronic component is made thinner. A multilayer electronic component including an element body in which at least one dielectric layer and at least one internal electrode layer are stacked in an alternating manner, wherein a thickness variation of the at least one internal electrode layer is larger than a thickness variation of the at least one dielectric layer.

公开(公告)号：US20210241974A1

公开(公告)日：2021-08-05

申请号：US17270080

申请日：2019-08-27

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Takeshi SHIBAHARA ,  Junichi YAMAZAKI

IPC: H01G4/12 ,  H01G4/33 ,  H05K1/16 ,  H01G4/30

Abstract: A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

公开(公告)号：US20190144341A1

公开(公告)日：2019-05-16

申请号：US16185498

申请日：2018-11-09

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Yuki NAGAMINE ,  Takeshi SHIBAHARA ,  Yuji UMEDA ,  Junichi YAMAZAKI

IPC: C04B35/58 ,  H01G4/12

Abstract: A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

公开(公告)号：US20180301284A1

公开(公告)日：2018-10-18

申请号：US15938616

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Takeshi SHIBAHARA ,  Yuki NAGAMINE ,  Yoshitomo TANAKA ,  Kumiko YAMAZAKI

IPC: H01G4/33 ,  H01L49/02 ,  H01G4/08 ,  C01B21/082

CPC classification number: H01G4/33 ,  C01B21/0821 ,  C01P2002/60 ,  C01P2002/78 ,  C01P2006/40 ,  C04B35/495 ,  C04B35/58007 ,  C04B35/6262 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/781 ,  C04B2235/787 ,  H01G4/085 ,  H01G4/1218 ,  H01G4/1272 ,  H01G4/306 ,  H01L28/55

Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.