公开(公告)号：US20230027057A1

公开(公告)日：2023-01-26

申请号：US17858566

申请日：2022-07-06

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Shuto KANO ,  Yuji UMEDA ,  Hiroki KITAMURA ,  Takeshi SHIBAHARA ,  Junichi YAMAZAKI

IPC: H01G4/33 ,  H01G4/20

Abstract: An amorphous dielectric includes a compound represented by A1+αBOxNy. −0.3≤α≤0.3, 0

公开(公告)号：US20190202744A1

公开(公告)日：2019-07-04

申请号：US16074406

申请日：2017-02-01

Applicant: TDK CORPORATION ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Kumiko YAMAZAKI ,  Yuki NAGAMINE ,  Takeshi SHIBAHARA ,  Shinichi KIKKAWA ,  Yuji MASUBUCHI

IPC: C04B35/58 ,  H01B3/12

Abstract: To provide a dielectric porcelain composition and an electronic component that demonstrate ferroelectricity. A dielectric porcelain composition that is characterized by having a perovskite-type oxynitride as a principal component and by including a polycrystalline body that demonstrates ferroelectricity.

公开(公告)号：US20190023616A1

公开(公告)日：2019-01-24

申请号：US16068762

申请日：2017-02-01

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Hiroshi CHIHARA ,  Yuki NAGAMINE ,  Junichi YAMAZAKI

IPC: C04B35/58 ,  C04B35/50 ,  C04B35/626 ,  C04B35/64 ,  C04B35/634 ,  H01G4/33 ,  H01G4/12 ,  H01L49/02

Abstract: A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan δ. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n≥0.7.

公开(公告)号：US20240011152A1

公开(公告)日：2024-01-11

申请号：US18348417

申请日：2023-07-07

Applicant: TDK CORPORATION ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Kumiko YAMAZAKI ,  Shuto KANO ,  Yuji MASUBUCHI ,  Shinichi KIKKAWA

IPC: C23C16/30 ,  B01J35/00 ,  C23C16/515

CPC classification number: C23C16/308 ,  B01J35/004 ,  C23C16/515

Abstract: A dielectric composition comprises a crystal of an oxynitride. A peak attributed to absence of a center of symmetry of the crystal of the oxynitride is detected by Raman spectroscopy of the dielectric composition within a Raman shift range of 500 cm−1 or less.

公开(公告)号：US20180282228A1

公开(公告)日：2018-10-04

申请号：US15938344

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Takeshi SHIBAHARA ,  Yuki NAGAMINE ,  Kumiko YAMAZAKI

IPC: C04B35/58 ,  H01L49/02 ,  H01B3/10 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/622

CPC classification number: C04B35/58007 ,  C04B35/462 ,  C04B35/495 ,  C04B35/58014 ,  C04B35/62218 ,  C04B35/6262 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/63416 ,  C04B35/64 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3886 ,  C04B2235/602 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/768 ,  H01B3/10 ,  H01G4/085 ,  H01G4/1218 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/55

Abstract: A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein “A” is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, “B” is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

公开(公告)号：US20210238037A1

公开(公告)日：2021-08-05

申请号：US17269698

申请日：2019-08-27

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Wakiko SATO ,  Junichi YAMAZAKI

IPC: C01B21/082 ,  H01G4/33 ,  H01G4/12 ,  H01G4/30 ,  H05K1/16 ,  H01L49/02 ,  C01G35/00 ,  C23C14/06

Abstract: A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a

公开(公告)号：US20180282229A1

公开(公告)日：2018-10-04

申请号：US15765150

申请日：2016-09-30

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Isao NAKAHATA

IPC: C04B35/58 ,  C04B35/626 ,  C04B35/64 ,  C04B35/634 ,  C04B35/622 ,  C23C14/28 ,  C23C14/06 ,  H01G4/12 ,  H01G4/33

CPC classification number: C04B35/58014 ,  C04B35/462 ,  C04B35/465 ,  C04B35/495 ,  C04B35/58007 ,  C04B35/62218 ,  C04B35/6262 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/63416 ,  C04B35/64 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3895 ,  C04B2235/604 ,  C04B2235/606 ,  C04B2235/6567 ,  C04B2235/76 ,  C04B2235/768 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2235/96 ,  C23C14/0021 ,  C23C14/0676 ,  C23C14/088 ,  C23C14/28 ,  H01B3/00 ,  H01G4/12 ,  H01G4/1209 ,  H01G4/33

Abstract: A dielectric thin film with high relative permittivity and high insulation can establish the amount of nitrogen in a metal oxynitride to be low. A dielectric thin film, wherein the dielectric composition is a metal oxynitride solid solution including Ma and Mb: a composition represented by the chemical formula MazMbOxNy (Ma is one element selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, Mb is one element selected from Ta, Nb, Ti and W, O is oxygen, and N is nitrogen); when a is the ionic valence exhibited when Ma occupies an A site in the perovskite structure and b is the ionic valence exhibited when Mb occupies a B site in the perovskite structure, a and b are 6.7≤a+b≤7.3, and x, y and z are 0.8≤z≤1.2, 2.450≤x≤3.493, and 0.005≤y≤0.700.

公开(公告)号：US20210241974A1

公开(公告)日：2021-08-05

申请号：US17270080

申请日：2019-08-27

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Takeshi SHIBAHARA ,  Junichi YAMAZAKI

IPC: H01G4/12 ,  H01G4/33 ,  H05K1/16 ,  H01G4/30

Abstract: A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

公开(公告)号：US20190144341A1

公开(公告)日：2019-05-16

申请号：US16185498

申请日：2018-11-09

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Yuki NAGAMINE ,  Takeshi SHIBAHARA ,  Yuji UMEDA ,  Junichi YAMAZAKI

IPC: C04B35/58 ,  H01G4/12

Abstract: A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

公开(公告)号：US20190019622A1

公开(公告)日：2019-01-17

申请号：US16069095

申请日：2017-02-01

Applicant: TDK CORPORATION

Inventor： Kumiko YAMAZAKI ,  Hiroshi CHIHARA ,  Yuki NAGAMINE ,  Junichi YAMAZAKI ,  Yuji UMEDA

IPC: H01G4/08 ,  H01G4/33 ,  C30B29/10 ,  C01B21/082

Abstract: A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.