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公开(公告)号：US20170345449A1
公开(公告)日：2017-11-30
申请号：US15600066
申请日：2017-05-19
Applicant: TDK CORPORATION
Inventor： Tetsuya SHIBATA , Junichiro URABE , Takekazu YAMANE , Tsuyoshi SUZUKI
IPC: G11B5/39
CPC classification number: H03H2/00 , G01R33/00 , G01R33/093 , G01R33/1284 , G11B5/3945 , H01L43/00
Abstract: A magnetoresistive effect device includes a magnetoresistive effect element first and second ports, a signal line, an inductor, and a direct current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The inductor is connected to one of the signal line between the magnetoresistive effect element and the first port and the signal line between the magnetoresistive effect element and the second port and is capable of being connected to ground. The direct-current input terminal is connected to the other of the above signal lines. A closed circuit including the magnetoresistive effect element, the signal line, the inductor, the ground, and direct-current input terminal is capable of being formed. The magnetoresistive effect element is arranged so that direct current flows in a direction from a magnetization fixed layer to a magnetization free layer.
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公开(公告)号：US20190252749A1
公开(公告)日：2019-08-15
申请号：US16262358
申请日：2019-01-30
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Shinji HARA
IPC: H01P1/218
Abstract: A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other. The relative angle between the first and second circuit units in a predetermined cross product direction is 90 degrees or less.
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公开(公告)号：US20190245254A1
公开(公告)日：2019-08-08
申请号：US16340471
申请日：2017-10-23
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE , Tetsuya SHIBATA , Tsuyoshi SUZUKI , Junichiro URABE , Atsushi SHIMURA
IPC: H01P1/218
Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.
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公开(公告)号：US20190148046A1
公开(公告)日：2019-05-16
申请号：US16306935
申请日：2017-09-14
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI
Abstract: A magnetoresistance effect device includes: a first magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer, a metal layer, a first electrode, an input terminal, an output terminal, and a reference potential terminal, wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order, the second ferromagnetic layer is in electrical contact with the first electrode, which is connected to the output terminal configured to output a high-frequency signal, the metal layer is connected to the input and reference potential terminals so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal, which is in electrical contact with the first ferromagnetic layer, and the first magnetoresistance effect element has an application terminal configured to apply a DC current or a DC voltage.
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公开(公告)号：US20180316077A1
公开(公告)日：2018-11-01
申请号：US15962587
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE , Junichiro URABE , Tsuyoshi SUZUKI , Atsushi SHIMURA
Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.
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Patent Agency Ranking
公开(公告)号：US20180309046A1
公开(公告)日：2018-10-25
申请号：US15764826
申请日：2016-06-02
Applicant: TDK CORPORATION
Inventor： Junichiro URABE , Tetsuya SHIBATA , Atsushi SHIMURA , Takekazu YAMANE , Tsuyoshi SUZUKI
CPC classification number: H01L43/08 , B82Y25/00 , H01L29/82 , H01L43/02 , H01L43/10 , H01P1/215 , H03B15/006
Abstract: Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.
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公开(公告)号：US20160322937A1
公开(公告)日：2016-11-03
申请号：US15098617
申请日：2016-04-14
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Eiji SUZUKI
CPC classification number: H03B15/006 , H01F10/26 , H01F10/324 , H01F10/3286 , H03B5/1206 , H03B15/00
Abstract: A magnetoresistive effect oscillator executes a first step of applying a current, which has a first current density larger than a critical current density JO for oscillation, to a magnetoresistive effect element for a time TP, and then executes a second step of applying a current, which has a second current density JS smaller than the first current density and not smaller than the critical current density JO for oscillation, to the magnetoresistive effect element. The following formulae (1), (2) and (3), or the following formulae (1) and (4) are satisfied on an assumption that an average value of the first current density during the time TP in the first step is JP, a critical current density for magnetization reversal of the magnetoresistive effect element is JR, and a magnetization reversal time of the magnetoresistive effect element is TR: 0.1 × T R ( J R - J O ) J p - J S
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公开(公告)号：US20230416905A9
公开(公告)日：2023-12-28
申请号：US17348238
申请日：2021-06-15
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
CPC classification number: C23C14/54 , C23C16/52 , C23C14/34 , G06F30/27 , G06F2111/10
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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公开(公告)号：US20230392253A1
公开(公告)日：2023-12-07
申请号：US18229332
申请日：2023-08-02
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
CPC classification number: C23C14/54 , C23C16/52 , G06F2111/10 , C23C14/34 , G06F30/27
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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公开(公告)号：US20210304940A1
公开(公告)日：2021-09-30
申请号：US17214081
申请日：2021-03-26
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Shinto ICHIKAWA , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, wherein a crystal structure of the non-magnetic layer is a spinel structure, wherein the non-magnetic layer contains Mg, Al, X, and O as elements constituting the spinel structure, and wherein the X is at least one or more elements selected from a group consisting of Ti, Pt, and W.
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