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公开(公告)号：US20230025589A1
公开(公告)日：2023-01-26
申请号：US17858200
申请日：2022-07-06
Applicant: TDK CORPORATION
Inventor： Kazuumi INUBUSHI , Katsuyuki NAKADA , Shinto ICHIKAWA
Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1), RuαX1-α (1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5
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公开(公告)号：US20200035913A1
公开(公告)日：2020-01-30
申请号：US16504388
申请日：2019-07-08
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more high-barrier-height layers and one or more low-barrier-height layers, the one or more high-barrier-height layers having a relatively high barrier height with respect to the one or more low-barrier-height layers and the one or more low-barrier-height layers having a relatively low barrier height with respect to the one or more high-barrier-height layers. A minimum difference of barrier height between the one or more high-barrier-height layers and the one or more low-barrier-height layers is equal to or higher than 0.5 eV.
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公开(公告)号：US20220278271A1
公开(公告)日：2022-09-01
申请号：US17631571
申请日：2020-06-24
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.
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公开(公告)号：US20210159396A1
公开(公告)日：2021-05-27
申请号：US17168579
申请日：2021-02-05
Applicant: TDK CORPORATION
Inventor： Katsuyuki NAKADA , Shinto ICHIKAWA
Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0
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公开(公告)号：US20190019942A1
公开(公告)日：2019-01-17
申请号：US16025171
申请日：2018-07-02
Applicant: TDK CORPORATION
Inventor： Katsuyuki NAKADA , Shinto ICHIKAWA
Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is interposed between the first and second ferromagnetic layers, wherein the tunnel barrier layer has a spinel structure represented by a compositional formula X1-αYαOβ, and the tunnel barrier layer contains one or more additional elements selected from the group consisting of He, Ne, Ar, Kr, Xe, P, C, B, and Si, and in the compositional formula, X represents one or more elements selected from the group consisting of Mg, Zn, Cd, Ag, Pt, and Pb, Y represents one or more elements selected from the group consisting of Al, Ga, and In, a range of α is 0
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Patent Agency Ranking
6.发明申请公开(公告)号：US20230009284A1
公开(公告)日：2023-01-12
申请号：US17370613
申请日：2021-07-08
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Hiroaki SUKEGAWA , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.
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公开(公告)号：US20220278272A1
公开(公告)日：2022-09-01
申请号：US17746178
申请日：2022-05-17
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
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公开(公告)号：US20210286028A1
公开(公告)日：2021-09-16
申请号：US17164958
申请日：2021-02-02
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.
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公开(公告)号：US20210265562A1
公开(公告)日：2021-08-26
申请号：US17116236
申请日：2020-12-09
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Kazuumi INUBUSHI , Katsuyuki NAKADA
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.
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公开(公告)号：US20210028355A1
公开(公告)日：2021-01-28
申请号：US17060299
申请日：2020-10-01
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
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