公开(公告)号：US20230207329A1

公开(公告)日：2023-06-29

申请号：US17801964

申请日：2021-02-25

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium including a ligand which coordinates to ruthenium, the treatment liquid is a treatment liquid for inhibiting a ruthenium-containing gas generated when contacting a semiconductor wafer including ruthenium with the treatment liquid in a semiconductor forming process. Also provided is an inhibitor for the generation of a ruthenium-containing gas, including a compound having a carbonyl group or a heterocyclic compound. Further provided is a treatment agent for a ruthenium-containing waste liquid, including a compound having a carbonyl group or a heterocyclic compound.

公开(公告)号：US20220411937A1

公开(公告)日：2022-12-29

申请号：US17642059

申请日：2021-11-25

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki SATO ,  Yuki KIKKAWA ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C23F1/40 ,  H01L21/3213

Abstract: The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

公开(公告)号：US20220328320A1

公开(公告)日：2022-10-13

申请号：US17708596

申请日：2022-03-30

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: H01L21/306

Abstract: Provided are: a semiconductor treatment liquid containing a hypobromite ion, in which the concentration of the hypobromite ion is 0.1 μmol/L or more and less than 0.001 mol/L; a RuO4 gas generation inhibitor containing an onium salt composed of an onium ion and a bromine-containing ion, in which the hypobromite ion concentration is 0.1 μmol/L or more and less than 0.001 mol/L; and a method of producing a halogen oxyacid, the method including allowing a bromine salt, an organic alkali, and a halogen to react with each other to obtain the halogen oxyacid.

公开(公告)号：US20220298416A1

公开(公告)日：2022-09-22

申请号：US17636539

申请日：2021-08-06

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C09K13/00 ,  H01L21/3213

Abstract: Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R1, R2, and R3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X− is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.

公开(公告)号：US20220315522A1

公开(公告)日：2022-10-06

申请号：US17838536

申请日：2022-06-13

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: C07C209/68 ,  C11D3/395 ,  C11D11/00 ,  B08B3/08 ,  H01L21/02

Abstract: Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

公开(公告)号：US20220073820A1

公开(公告)日：2022-03-10

申请号：US17419058

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki KIKKAWA ,  Tomoaki SATO ,  Takafumi SHIMODA ,  Takayuki NEGISHI

IPC: C09K13/06 ,  H01L21/304

Abstract: Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided. (In the Formula, “a” is an integer from 6 to 20; R1, R2, and R3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X− is, for example, a chloride ion.)

公开(公告)号：US20220010206A1

公开(公告)日：2022-01-13

申请号：US17294148

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Takayuki NEGISHI ,  Seiji TONO ,  Tomoaki SATO

IPC: C09K13/06 ,  H01L21/3213

Abstract: The present invention provides a treatment liquid for treating a semiconductor wafer in a semiconductor formation process, the treatment liquid including: (A) hypochlorite ion; (B) a pH buffer; and (C) a tetraalkylammonium ion represented by the following formula (1): (wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20).

公开(公告)号：US20210403323A1

公开(公告)日：2021-12-30

申请号：US17357232

申请日：2021-06-24

Applicant: TOKUYAMA CORPORATION

Inventor： Takayuki NEGISHI ,  Takafumi SHIMODA ,  Akihiro SAITO ,  Naoki MATSUDA ,  Kenichi KAKIZONO ,  Takeshi KAWANO ,  Masayuki MORIWAKI

IPC: C01B11/06 ,  B01F5/06

Abstract: The present invention provides industrially advantageous production method and production apparatus, with respect to production of a halogen oxyacid solution. There is solved by a method for producing a halogen oxyacid solution, comprising continuously supplying an organic alkaline solution and halogen to a static mixer and mixing them, to thereby continuously obtain a halogen oxyacid generated.

公开(公告)号：US20210155878A1

公开(公告)日：2021-05-27

申请号：US16953754

申请日：2020-11-20

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Tomoaki SATO ,  Takayuki NEGISHI

IPC: C11D3/395 ,  C11D11/00 ,  C07C209/68 ,  H01L21/02 ,  B08B3/08

Abstract: Provided is a method of producing a quatenary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.