公开(公告)号：US20240222157A1

公开(公告)日：2024-07-04

申请号：US18608043

申请日：2024-03-18

Applicant: Tokyo Electron Limited

Inventor： Song yun Kang ,  Toshitake Tsuda ,  Kenji Sekiguchi ,  Syuhei Yonezawa ,  Koji Kagawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/02129 ,  H01L21/02343 ,  H01L21/30604 ,  H01L21/31144 ,  H01L21/67051

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

公开(公告)号：US10181559B2

公开(公告)日：2019-01-15

申请号：US15841998

申请日：2017-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Kubo ,  Song yun Kang

IPC: H01L43/12 ,  H01L21/02 ,  H01L43/10

Abstract: There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.

公开(公告)号：US09611545B2

公开(公告)日：2017-04-04

申请号：US14417196

申请日：2013-06-19

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

Inventor： Song yun Kang ,  Yoshinao Kumagai ,  Akinori Koukitu

IPC: C23C16/40 ,  B05C19/06 ,  C23C16/448 ,  H01L21/02 ,  C23C16/52

CPC classification number: C23C16/407 ,  B05C19/06 ,  C23C16/4488 ,  C23C16/52 ,  H01L21/02554 ,  H01L21/0262

Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1