公开(公告)号：US10403814B2

公开(公告)日：2019-09-03

申请号：US15566384

申请日：2016-05-02

Applicant: Tokyo Electron Limited

Inventor： Takuya Kubo ,  Song yun Kang ,  Keiichi Shimoda ,  Tetsuya Ohishi

IPC: B08B5/00 ,  C23F1/02 ,  H01J37/32 ,  C23F1/08 ,  H01L43/12 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H01L21/67 ,  H01L21/66 ,  H01L27/22 ,  H01L43/02 ,  G11B5/84 ,  H01L21/683 ,  H01L43/10

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal, the method include a first cleaning step of providing a gas containing a hydrogen-containing gas, and removing a carbon-containing deposition by plasma generated from the gas containing the hydrogen-containing gas; a second cleaning step of, after the first cleaning step, providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and a third cleaning step of, after the second cleaning step, providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US09947864B2

公开(公告)日：2018-04-17

申请号：US15327434

申请日：2015-08-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tamotsu Morimoto ,  Song yun Kang

IPC: H01L43/12 ,  H01L43/00 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L27/105 ,  H01L43/00 ,  H01L43/08 ,  H01L43/10

Abstract: In one embodiment, a method for etching a workpiece including a lower electrode and a multi-layer film disposed on the lower electrode, the multi-layer film including a first magnetic layer, a second magnetic layer, and an insulating layer interposed between the first magnetic layer and the second magnetic layer, through a mask, is provided. The method includes exposing the workpiece to plasma of first processing gas which contains first rare gas and second rare gas having an atomic number larger than that of the first rare gas, and does not contain hydrogen gas.

公开(公告)号：US11832524B2

公开(公告)日：2023-11-28

申请号：US17264213

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya Kubo ,  Song yun Kang

IPC: H01L21/00 ,  H10N50/01 ,  H01J37/34

CPC classification number: H10N50/01 ,  H01J37/3476 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of processing a substrate includes a first step, a second step and a third step. The substrate includes an etching layer and a mask. The mask is formed on a first surface of the etching layer. The first step forms a first film on a second surface of the mask. The second step forms a second film having a material of the etching layer on the first film by etching the first surface of the etching layer. The third step removes the first film and the second film by exposing the substrate after the second step to plasma of a processing gas. The first film has an electrode material. The processing gas includes oxygen.

公开(公告)号：US10790152B2

公开(公告)日：2020-09-29

申请号：US15740394

申请日：2016-07-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Kubo ,  Song yun Kang ,  Tamotsu Morimoto

IPC: H01L21/3065 ,  H01L43/12 ,  H01L43/08 ,  C23F4/00 ,  H01L21/3213 ,  H01L43/10

Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.

公开(公告)号：US11171286B2

公开(公告)日：2021-11-09

申请号：US16151689

申请日：2018-10-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Kubo ,  Song yun Kang

IPC: H01L43/12 ,  H01L43/02 ,  H01F41/34 ,  H01F41/30 ,  H01L43/10 ,  H01F10/32 ,  G11C11/16

Abstract: There is provided a method of processing a workpiece for manufacturing a magnetoresistive effect element, the workpiece including a first multilayer film and a second multilayer film, the first multilayer film including a first magnetic layer, a second magnetic layer and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and the second multilayer film constituting a pinning layer in the magnetoresistive effect element. The method includes etching the first multilayer film and the second multilayer film, and heating the workpiece after the etching or during the etching. The heating includes heating the workpiece while adjusting an ambient condition of the workpiece.

公开(公告)号：US11152564B2

公开(公告)日：2021-10-19

申请号：US16867826

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Takuya Kubo ,  Song yun Kang

IPC: H01L43/12

Abstract: The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.

公开(公告)号：US10944051B2

公开(公告)日：2021-03-09

申请号：US16526165

申请日：2019-07-30

Applicant: Tokyo Electron Limited

Inventor： Takuya Kubo ,  Song yun Kang ,  Keiichi Shimoda ,  Tetsuya Ohishi

IPC: B08B5/00 ,  C23F1/02 ,  H01J37/32 ,  C23F1/08 ,  H01L43/12 ,  G11B5/84 ,  H01L21/67 ,  H01L21/683 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H01L21/66 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.

公开(公告)号：US20210305066A1

公开(公告)日：2021-09-30

申请号：US17212225

申请日：2021-03-25

Applicant: Tokyo Electron Limited

Inventor： Song yun Kang ,  Toshitake Tsuda ,  Kenji Sekiguchi ,  Syuhei Yonezawa ,  Koji Kagawa

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311

Abstract: A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

公开(公告)号：US20150225846A1

公开(公告)日：2015-08-13

申请号：US14417196

申请日：2013-06-19

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

Inventor： Song yun Kang ,  Yoshinao Kumagai ,  Akinori Koukitu

IPC: C23C16/40 ,  C23C16/46 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/407 ,  B05C19/06 ,  C23C16/4488 ,  C23C16/52 ,  H01L21/02554 ,  H01L21/0262

Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1

Abstract translation: ZnO膜制造方法包括：将基板设置在安装基座上; 并且在从氯气供给源向第一原料收纳部R1供给氯气的同时，将来自第三气体供给源（氧气供给源）G3的氧气供给到反应容器内，控制加热单元（加热器H1，H2 和H3），使得第一原料存储部分R1的温度T1，第二原料存储部分R2的温度T2和其上设置有基板的安装基座的温度T3满足T1 < T2

公开(公告)号：US20130240479A1

公开(公告)日：2013-09-19

申请号：US13890529

申请日：2013-05-09

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi MORIYA ,  Kenichi Kataoka ,  Shigeru Senzaki ,  Youichi Shimanuki ,  Kazuhiko Kano ,  Yu Wamura ,  Song yun Kang ,  Eiichi Nishimura

IPC: B01D67/00

CPC classification number: B01D67/0023 ,  B01D61/025 ,  B01D67/0034 ,  B01D67/0062 ,  B01D69/10 ,  B01D71/022 ,  B01D71/024 ,  B01D2323/225 ,  B01D2323/24 ,  B01D2323/283 ,  B01D2325/02 ,  B01D2325/08 ,  B01D2325/48 ,  Y10T156/10

Abstract: To provide a method for producing a filtration filter that can simplify the process for providing clean water or freshwater. By etching silicon substrate 1 using masking film formed on a surface of substrate 1 and having numerous openings to expose portions of the surface, numerous circular holes 2 with an approximate diameter of 100 nm are formed in substrate 1. Diameter (D1) at minimum-diameter portions 4 near the openings of circular holes 2 to be reduced by silica film 3 is adjusted to be 1 nm˜100 nm by depositing silica film 3 on the inner surfaces of circular holes 2.

Abstract translation: 提供一种生产可以简化提供清水或淡水的过程的过滤器的方法。 通过使用形成在基板1的表面上并且具有许多开口以暴露表面部分的掩模膜来蚀刻硅基板1，在基板1中形成大约直径为100nm的许多圆形孔2。 通过将二氧化硅膜3还原的圆形孔2的开口附近的直径部分4通过在圆形孔2的内表面上沉积二氧化硅膜3而调节为1nm〜100nm。