公开(公告)号：US09859111B2

公开(公告)日：2018-01-02

申请号：US14925805

申请日：2015-10-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.