公开(公告)号：US20200381465A1

公开(公告)日：2020-12-03

申请号：US16556654

申请日：2019-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jeng-Shyan Lin ,  Shu-Ting Tsai ,  Tzu-Hsuan Hsu

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.

公开(公告)号：US20200306552A1

公开(公告)日：2020-10-01

申请号：US16901884

申请日：2020-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Ting Tsai ,  Jeng-Shyan Lin ,  Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung

IPC: A61N1/39 ,  H01L25/00 ,  H01L27/06 ,  H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

Abstract: A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.

公开(公告)号：US20170110497A1

公开(公告)日：2017-04-20

申请号：US15395071

申请日：2016-12-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： U-Ting Chen ,  Shu-Ting Tsai ,  Cheng-Ying Ho ,  Tzu-Hsuan Hsu ,  Shih Pei Chou

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

Abstract: An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.