Boundary acoustic wave device manufacturing method
    12.
    发明授权
    Boundary acoustic wave device manufacturing method 有权
    边界声波装置的制造方法

    公开(公告)号:US08074341B2

    公开(公告)日:2011-12-13

    申请号:US12429313

    申请日:2009-04-24

    IPC分类号: H04R31/00

    摘要: A method for manufacturing a boundary acoustic wave device includes the steps of preparing a laminated structure in which an IDT electrode is disposed at an interface between first and second solid media and reforming the first medium and/or the second medium by externally providing the laminated structure with energy capable of reaching the inside of the first medium and/or the second medium and thus adjusting a frequency of the boundary acoustic wave device. The above provides a boundary acoustic wave device manufacturing method that enables frequency adjustment to be readily performed with high accuracy.

    摘要翻译: 一种声界面波装置的制造方法包括以下步骤:制备其中IDT电极设置在第一和第二固体介质之间的界面处并通过外部提供叠层结构而重整第一介质和/或第二介质的层压结构 其能量能够到达第一介质和/或第二介质的内部,并因此调节声界面波装置的频率。 以上提供了能够高精度地容易进行频率调整的弹性边界波装置的制造方法。

    Method for manufacturing a surface acoustic wave device
    13.
    发明授权
    Method for manufacturing a surface acoustic wave device 有权
    声表面波装置的制造方法

    公开(公告)号:US07730596B2

    公开(公告)日:2010-06-08

    申请号:US11329460

    申请日:2006-01-11

    IPC分类号: H01L41/22 H01L41/00

    摘要: A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.

    摘要翻译: 通过在IDT上形成SiO 2膜来制造具有高机电系数和反射系数以及具有改善的频率 - 温度特性的表面声波器件的方法,以便防止在SiO2的表面上发生裂纹 膜,从而可以可靠地获得所需的性能。 表面声波装置包括至少一个IDT,其由具有高于Al的密度的金属或合金构成并形成在25°至55°的旋转Y板X传播LiTaO 3衬底上的SiO 2和SiO 2 薄膜,其设置在LiTaO 3基板上,以便覆盖至少一个IDT以提高频率 - 温度特性。

    Surface acoustic wave device
    14.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号:US07345400B2

    公开(公告)日:2008-03-18

    申请号:US11674816

    申请日:2007-02-14

    IPC分类号: H03H9/64 H03H3/10 H03H9/25

    CPC分类号: H03H9/02559

    摘要: In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.

    摘要翻译: 在表面声波装置中,构成至少一个IDT的电极膜设置在压电基板上,并且在压电基板上设置SiO 2膜以覆盖电极膜。 电极膜的膜厚度在激发的表面声波的波长的约1%至约3%的范围内。

    Surface acoustic wave device
    15.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号:US07208860B2

    公开(公告)日:2007-04-24

    申请号:US11268274

    申请日:2005-11-03

    IPC分类号: H01L41/08

    摘要: A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.

    摘要翻译: 表面声波装置具有高的机电系数和反射系数,并且还具有通过在IDT上形成SiO 2膜而实现的改善的频率温度特性,以防止在 SiO 2膜的表面,使得可以可靠地获得期望的性能。 表面声波装置包括至少一个IDT,其由密度高于Al的金属或合金构成,并且形成在25°至55°的旋转Y板X传播LiTaO 3上, / SUB>衬底和设置在LiTaO 3衬底上的SiO 2膜以覆盖至少一个IDT以提高频率 - 温度特性。

    Acoustic wave device
    16.
    发明授权
    Acoustic wave device 有权
    声波装置

    公开(公告)号:US08264122B2

    公开(公告)日:2012-09-11

    申请号:US12691791

    申请日:2010-01-22

    申请人: Masakazu Mimura

    发明人: Masakazu Mimura

    IPC分类号: H01L41/08

    摘要: An acoustic wave device having an improved frequency-temperature characteristic and in which a spurious response of the higher order mode is suppressed includes a piezoelectric substrate made of LiNbO3, a SiO2 layer laminated on the piezoelectric substrate, and an IDT electrode disposed in an interface of the piezoelectric substrate and the SiO2 layer, wherein φ and θ of Euler angles expressed by (φ, θ, ψ) of LiNbO3 substrate satisfy φ=0° and 80°≦θ≦130°, respectively. The acoustic wave device using an acoustic wave primarily having an SH wave, wherein ψ is set to satisfy 5°≦ψ≦30°.

    摘要翻译: 具有改善的频率 - 温度特性并且其中高阶模式的杂散响应被抑制的声波装置包括由LiNbO 3制成的压电基板,层叠在压电基板上的SiO 2层和设置在压电基板的界面中的IDT电极 压电衬底和SiO 2层,其中&phgr; 和&thetas; 由LiNbO3衬底的(&phgr;& tt;ψ)表示的欧拉角分别满足&= = 0°和80°≦̸& the; nlE; 130°。 使用主要具有SH波的声波的声波装置,其中ψ被设定为满足5°< nlE;ψ≦̸ 30°。

    Boundary acoustic wave device
    17.
    发明授权
    Boundary acoustic wave device 有权
    边界声波装置

    公开(公告)号:US07898145B2

    公开(公告)日:2011-03-01

    申请号:US12409702

    申请日:2009-03-24

    IPC分类号: H03H9/25

    摘要: A boundary acoustic wave device includes a piezoelectric substance made of LiNbO3 having a surface obtained by rotating a Y axis by about 15°±10° as a primary surface, a dielectric substance which is made of a silicon oxide and which is laminated to the piezoelectric substance, and an electrode structure disposed at a boundary between the piezoelectric substance and the dielectric substance and which includes an IDT arranged to utilize a boundary acoustic wave propagating along the boundary. When the density of the IDT, the thickness thereof, the wavelength deter-mined by the period of electrode fingers of the IDT, and the duty ratio thereof are represented by ρ (kg/m3), H (μm), λ (μm), and x, respectively, x and the product of H/λ and ρ are set in a range that satisfies the following formula (1): (H/λ)×ρ>70.7924(x+0.055)(−2.884)+797.09  Formula (1).

    摘要翻译: 一种弹性边界波装置包括由具有通过使Y轴旋转大约15°±10°获得的表面的LiNbO 3制成的压电物质作为主表面,由氧化硅制成并且被压电 物质,以及设置在压电体和电介质之间的边界处的电极结构,并且包括设置成利用沿边界传播的边界声波的IDT。 当IDT的密度,其厚度,由IDT的电极指的周期决定的波长及其占空比由&rgr; (kg / m3),H(μm),λ(μm)和x分别为x和H /λ与&rgr; (H /λ)×70.7924(x + 0.055)( - 2.884)+797.09式(1)的范围设定为满足下式(1)的范围。

    Hydrogen combustion system
    18.
    发明授权
    Hydrogen combustion system 失效
    氢燃烧系统

    公开(公告)号:US07700055B2

    公开(公告)日:2010-04-20

    申请号:US11878054

    申请日:2007-07-20

    摘要: A hydrogen combustion system comprising: an external cylinder 1 constituting the exterior of a double tube construction; an internal cylinder 2 formed by a porous metal plate constituting the interior of said double tube construction; hydrogen combustion catalyst 4 supported with precious metals on spherical ceramic support surface, formed in pellet state, being packed in said internal cylinder 2; an insert pipe 3 formed by porous metal plate inserted in the center of said internal cylinder 2; pre-heating heaters 5 installed between said insert pipe 3 and said internal cylinder 2 to preheat said hydrogen combustion catalyst 4 to ambient atmosphere of over catalytic reaction temperatures; a hydrogen introducing port 8 connecting to said insert pipe 3; an air introducing port 9 provided at the bottom of said external cylinder 1 in the area between said external cylinder 1 and said internal cylinder 2, wherein air for hydrogen combustion is introduced by the drift effect resulting from the differential pressure generated between the packed layer of hydrogen combustion catalyst and the outside, by thermal convection, achieving safe combustion treatment of hydrogen in simple construction, small size and high treatment efficiency.

    摘要翻译: 一种氢燃烧系统,包括:构成双管结构的外部的外筒1; 由构成所述双管结构内部的多孔金属板形成的内筒2; 氢气燃烧催化剂4由贵金属负载在球形陶瓷支撑表面上,以颗粒状形成,装在所述内筒2中; 由插入在所述内筒2的中心的多孔金属板形成的插入管3; 预热加热器5安装在所述插入管3和所述内筒2之间,以将所述氢燃烧催化剂4预热到过度催化反应温度的环境气氛; 连接到所述插入管3的氢气引入口8; 设置在外筒1的底部的外筒1和内筒2之间的空气引入口9,其中用于氢气燃烧的空气通过由填充层 氢燃烧催化剂和外部,通过热对流,在施工简单,体积小,处理效率高的条件下实现氢的安全燃烧处理。

    Television camera and white balance correcting method
    19.
    发明授权
    Television camera and white balance correcting method 失效
    电视摄像机和白平衡校正方法

    公开(公告)号:US06927792B1

    公开(公告)日:2005-08-09

    申请号:US09936307

    申请日:2000-03-13

    CPC分类号: H04N9/735

    摘要: The white balance of a television camera is not lost and kept properly even if the diaphragm is opened to the utmost limit at a dark place. A signal F representing the diaphragm value of the taking lens is inputted from an iris part 2 into a microcomputer 8. The level adjusting values of the R, G, and B signals are set in the microcomputer 8 according to the diaphragm signal F and sent to a white balance correcting circuit 6. The correcting circuit 6 adjusts the levels of the R, G, and B signals to the same value according to the level adjusting values.

    摘要翻译: 电视摄像机的白平衡不会丢失并保持正确,即使隔膜在黑暗的地方被打开到极限。 表示拍摄镜头的光圈值的信号F从光圈部分2输入到微型计算机8中。 R,G,B信号的电平调整值根据隔膜信号F设定在微计算机8中,送到白平衡校正电路6。 校正电路6根据电平调整值将R,G和B信号的电平调整到相同的值。

    Boundary acoustic wave device
    20.
    发明授权
    Boundary acoustic wave device 有权
    边界声波装置

    公开(公告)号:US08248186B2

    公开(公告)日:2012-08-21

    申请号:US13293151

    申请日:2011-11-10

    IPC分类号: H03H9/54

    摘要: A boundary acoustic wave device includes a first medium, a second medium laminated on the first medium, and an IDT electrode arranged at an interface between the first medium and the second medium. The boundary acoustic wave device further includes a reformed portion disposed in at least one of the first medium and the second medium, reformed by externally provided energy, and having frequency characteristics different from frequency characteristics exhibited when the boundary acoustic wave device includes only at least one of the first medium and the second medium.

    摘要翻译: 弹性边界波装置包括第一介质,层叠在第一介质上的第二介质和布置在第一介质和第二介质之间的界面处的IDT电极。 弹性边界波装置还包括设置在第一介质和第二介质中的至少一个中的重整部分,由外部提供的能量重整,并且当弹性边界波装置仅包括至少一个时,具有与频率特性不同的频率特性 的第一媒体和第二媒体。