公开(公告)号：US06609147B1

公开(公告)日：2003-08-19

申请号：US09227689

申请日：1999-01-08

申请人： Koichi Matsuda ,  Taketo Naito ,  Hiroshi Ueno

发明人： Koichi Matsuda ,  Taketo Naito ,  Hiroshi Ueno

IPC分类号： G06F1516

CPC分类号： H04L12/1813 ,  A63F13/12 ,  A63F13/87 ,  A63F2300/50 ,  A63F2300/572 ,  H04L12/1827 ,  H04L67/38

摘要： Communication between users not accessing a shared virtual reality space at the same time is realized. A client terminal sends a calling card and a mail. A hard disk drive of a mail server holds the calling card and the mail. When a user to whom the calling card and the mail are to be sent accesses the shared virtual reality space, the mail server transfers the calling card and the mail to the client terminal.

摘要翻译： 同时实现不访问共享虚拟现实空间的用户之间的通信。 客户终端发送电话卡和邮件。 邮件服务器的硬盘驱动器保存电话卡和邮件。 当要向其发送呼叫卡和邮件的用户访问共享虚拟现实空间时，邮件服务器将呼叫卡和邮件传送到客户终端。

公开(公告)号：US06346956B2

公开(公告)日：2002-02-12

申请号：US08939152

申请日：1997-09-29

申请人： Koichi Matsuda

发明人： Koichi Matsuda

IPC分类号： G06F1300

CPC分类号： G06F17/30994

摘要： To allow the user who wants to use three-dimensional virtual reality spaces to easily select a desired three-dimensional virtual reality space. When the browser is started with data about a three-dimensional virtual reality space stored in a predetermined directory, this predetermined directory is searched. According to the search result, an entry room in which three-dimensional icons representing three-dimensional virtual reality spaces are arranged is generated and displayed. The three-dimensional icons arranged in the entry room are linked to the data of the corresponding three-dimensional virtual reality spaces. When user clicks on a desired three-dimensional icon, the corresponding three-dimensional virtual reality space is displayed.

摘要翻译： 为了允许想要使用三维虚拟现实空间的用户容易地选择所需的三维虚拟现实空间。 当浏览器从存储在预定目录中的三维虚拟现实空间的数据开始时，搜索该预定目录。 根据搜索结果，生成并显示表示三维虚拟现实空间的三维图标的入口室。 安排在入口室中的三维图标与相应的三维虚拟现实空间的数据相关联。 当用户点击所需的三维图标时，显示相应的三维虚拟现实空间。

公开(公告)号：US06331672B1

公开(公告)日：2001-12-18

申请号：US08807590

申请日：1997-02-27

申请人： Koichi Matsuda ,  Jinsho Matsuyama

发明人： Koichi Matsuda ,  Jinsho Matsuyama

IPC分类号： H01L3100

CPC分类号： H01L31/0236 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02366 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer has holes on the surface, is provided. Additionally, a photovoltaic cell comprising a substrate, a back reflector, a transparent conductive layer, and a photoelectric conversion layer, wherein diffuse reflectance of the back reflector is 3 to 50%, is provided. According to the above-described structures, processability, yield and reliability of the photovoltaic cell can be improved, while photoelectric conversion efficiency is maintained at a high level due to back-surface diffuse reflection.

摘要翻译： 提供了一种包括基板，后反射器，透明导电层和光电转换层的光电池，其中透明导电层在表面上具有孔。 此外，提供了包括基板，后反射器，透明导电层和光电转换层的光伏电池，其中后反射器的漫反射率为3至50％。 根据上述结构，可以提高光伏电池的加工性，成品率和可靠性，同时由于背面漫反射，光电转换效率保持在高水平。

公开(公告)号：US06184456B2

公开(公告)日：2001-02-06

申请号：US08985312

申请日：1997-12-04

申请人： Jinsho Matsuyama ,  Koichi Matsuda

发明人： Jinsho Matsuyama ,  Koichi Matsuda

IPC分类号： H01L3100

CPC分类号： H01L31/0368 ,  H01L31/056 ,  Y02E10/52

摘要： A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.

摘要翻译： 本发明的光电器件具有非单晶半导体。 非单晶半导体的下面的层具有多晶结构。 暴露在下层的表面的多晶体的单个晶粒具有平滑的表面。 下层的表面沿着多晶体的晶界或在晶界处的突起或凹陷具有台阶。 或者，具有粗糙表面的多晶粒和具有平滑表面的多晶粒通常存在于多晶层的表面中。 多晶层可以是光伏器件的衬底。 本发明通过使用这种多晶层，提供了高度可靠且高效的薄膜光伏器件，其增强了半导体层的光吸收，并且即使在实际可采用的低成本下也可以以高产率生产 同时消除已知艺术在可加工性，产量和耐久性方面的缺陷。

公开(公告)号：US5637358A

公开(公告)日：1997-06-10

申请号：US376652

申请日：1995-01-20

申请人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

发明人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

IPC分类号： C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32495

摘要： In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.

摘要翻译： 在用于在基板上形成功能沉积膜的微波等离子体化学气相沉积设备中，该微波等离子体化学气相沉积设备包括一个基本上封闭的成膜室，该室具有一个圆周壁，该圆周壁的端部气密地设置有一个微波引入窗口， 电源连接，所述成膜室具有用于引起等离子体放电的放电空间，导致在基板上形成沉积膜，所述基板位于布置在所述成膜室中的基板保持器和所述成膜室 设置有用于将成膜原料气体供应到所述放电空间的装置和用于抽出所述成膜室的装置，其改进包括可移动地放置在位于所述膜形成室中的所述微波引入窗口的表面上的电介质片， 形成室，其处于所述电介质片面对面的状态 与微波引入窗口的所述表面发生反应。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。

公开(公告)号：US5418289A

公开(公告)日：1995-05-23

申请号：US68304

申请日：1993-05-28

申请人： Yasuyuki Hiromoto ,  Koichi Matsuda ,  Hideo Goto

发明人： Yasuyuki Hiromoto ,  Koichi Matsuda ,  Hideo Goto

IPC分类号： C08F255/06 ,  C08L51/06 ,  C08L39/00 ,  C08L39/04

CPC分类号： C08F255/06 ,  C08L51/06

摘要： A thermoplastic resin composition comprising 10 to 60 parts by weight off a maleimide series graft copolymer (A) and 90 to 40 parts by weight of a hard polymer (B) described below:(A) a maleimide series graft series copolymer obtained by emulsion graft copolymerization of a specific monomer mixture to a crosslinked latex containing an ethylene-propylene-non-conjugated diene copolymer and(B) a hard polymer containing a mixture of specific monomers.A process for producing a maleimide series graft copolymer, in which a monomer mixture and a redox type initiator are added to the polymerization system for more than one hour and the pH value of the aqueous polymerization phase is kept at 10.0-7.0.

摘要翻译： 一种热塑性树脂组合物，包含马来酰亚胺系接枝共聚物（A）10〜60重量份和下述的硬聚合物（B）90〜40重量份：（A）通过乳液接枝得到的马来酰亚胺系接枝系共聚物 特定单体混合物与含有乙烯 - 丙烯 - 非共轭二烯共聚物的交联胶乳共聚，和（B）含有特定单体混合物的硬聚合物。 制造马来酰亚胺系接枝共聚物的方法，其中将单体混合物和氧化还原型引发剂加入到聚合体系中超过1小时，并将水性聚合相的pH值保持在10.0-7.0。

公开(公告)号：US5279681A

公开(公告)日：1994-01-18

申请号：US838101

申请日：1992-02-20

申请人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

发明人： Koichi Matsuda ,  Tsutomu Murakami ,  Jinsho Matsuyama ,  Naoto Okada ,  Toshihiro Yamashita

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device having a semiconductor body with a pin junction, with reduced time-dependent deterioration, high reliability and a high photoelectric conversion efficiency is disclosed.An i-type semiconductor layer constituting the semiconductor body is composed of a layer having a region containing germanium and at least one region not containing germanium. The at least one region not containing germanium is provided at least at the side of a p-semiconductor layer. The maximum composition ratio of germanium in the region containing amorphous silicon and germanium is within a range from 20 to 70 at. %, and the composition ratio of germanium in the above-mentioned region containing amorphous silicon and germanium is zero at the side of an n-semiconductor layer and increases toward the side of the p-semiconductor layer, with the rate of increase being larger at the side of the n-semiconductor layer than at the side of p-semiconductor layer, and the composition ratio of germanium at the center of the i-layer thickness is at least equal to 75 at. % of the maximum composition ratio of germanium.

摘要翻译： 公开了具有半导体本体具有pin结的光电器件，具有降低的时间依赖性劣化，高可靠性和高的光电转换效率。 构成半导体本体的i型半导体层由具有锗的区域和至少一个不含锗的区域的层构成。 至少一个不含锗的区域至少设置在p半导体层的一侧。 含有非晶硅和锗的区域中锗的最大组成比在20至70at的范围内。 ％，并且上述含有非晶硅和锗的区域中的锗的组成比在n半导体层侧为零，并且朝向p半导体层的侧面增加，其增加率在 n半导体层的侧面比p半导体层侧，锗层在i层厚度的中央的组成比至少等于75at。 锗的最大组成比的％。

公开(公告)号：US5016565A

公开(公告)日：1991-05-21

申请号：US399900

申请日：1989-08-29

申请人： Keishi Saitoh ,  Ryuji Okamura ,  Hirokazu Otoshi ,  Koichi Matsuda

发明人： Keishi Saitoh ,  Ryuji Okamura ,  Hirokazu Otoshi ,  Koichi Matsuda

IPC分类号： C23C16/511 ,  H01J37/32

CPC分类号： H01J37/32935 ,  C23C16/511

摘要： A microwave plasma CVD apparatus for forming a functional deposited film comprises a film-forming chamber having a discharge space, a substrate holder, and apparatus for introducing a film-forming raw material gas into the film-forming chamber, for transmitting microwaves into the film-forming chamber to apply microwave energy to the raw material gas so that the raw material gas is converted into plasma, and for simultaneously applying a bias voltage to the plasma generated in the discharge space from an external system to control the plasma potential. A mechanism is provided for temporarily suspending the application of the bias voltage in the case when abnormal discharge occurs, while monitoring the fluctuation of the bias voltage to be applied to the plasma, to thereby inhibit the occurrence of abnormal discharge.

摘要翻译： 用于形成功能沉积膜的微波等离子体CVD装置包括具有放电空间的成膜室，基板保持器和用于将成膜原料气体引入成膜室的装置，用于将微波传输到膜中 对原料气体施加微波能量，使原料气体转化为等离子体，同时对来自外部系统的放电空间中产生的等离子体施加偏置电压，以控制等离子体电位。 在监视异常放电的情况下，同时监视施加到等离子体的偏置电压的波动，从而抑制异常放电的发生，提供暂时中止施加偏置电压的机构。

公开(公告)号：US5002617A

公开(公告)日：1991-03-26

申请号：US467540

申请日：1990-01-19

申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

IPC分类号： H01L31/0304 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/548

摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), arsenic atoms (As), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 800 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 7 atomic %; said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由铝原子（Al），砷原子（As），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜800范围内的晶粒，所述多晶半导体膜含有0.5〜7原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）的至少一种原子或 （b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 选自氢原子（H）和氟原子（F）的原子。