公开(公告)号：US5151764A

公开(公告)日：1992-09-29

申请号：US592487

申请日：1990-10-04

申请人： Yasutoshi Suzuki ,  Namoi Awano ,  Kouichi Hoshino ,  Hajime Inuzuka

发明人： Yasutoshi Suzuki ,  Namoi Awano ,  Kouichi Hoshino ,  Hajime Inuzuka

IPC分类号： H01L27/06 ,  H01L27/22 ,  H01L43/06

CPC分类号： H01L27/22 ,  H01L27/0605

摘要： A Group III and V element compound semiconductor such as gallium arsenide is formed on a semiconductor wafer by so-called MOCVD. A first pair of convex portions, a second pair of convex portions and crossing portion are formed from such compound semiconductor by an etching using a predetermined etching substance so that one convex portion of each pair is opposite to the other convex portion thereof and that a same crystalline surface of the crossing portion is exposed at all points where the first pair of convex portions crosses the second pair of convex portions. A pair of input terminals and a pair of output terminals are electrically connected to each convex portion of the first pair and the second pair, respectively so as to input electric current to each convex portion of the first pair and to output voltage generated in response to a magnetic field strength in such compound semiconductor. Accordingly, the occurrence of the unbalanced voltage is prevented because of the geometrical balance of two pair convex portions and crossing portion.

摘要翻译： 通过所谓的MOCVD在半导体晶片上形成III族和V族元素化合物半导体，例如砷化镓。 通过使用预定的蚀刻物质的蚀刻，由这种化合物半导体形成第一对凸部，第二对凸部和交叉部，使得每一对凸部与其另一个凸部相对，并且相同 所述交叉部的结晶面在所述第一对凸部与所述第二对凸部交叉的所有点处露出。 一对输入端子和一对输出端子分别电连接到第一对和第二对的每个凸部，以便将电流输入到第一对的每个凸部，并输出响应于 这种化合物半导体中的磁场强度。 因此，由于两对凸部和交叉部的几何平衡，防止了不平衡电压的发生。

公开(公告)号：US5843849A

公开(公告)日：1998-12-01

申请号：US662632

申请日：1996-06-13

申请人： Kouichi Hoshino ,  Yoshiki Ueno ,  Takuya Kouya

发明人： Kouichi Hoshino ,  Yoshiki Ueno ,  Takuya Kouya

IPC分类号： H01L29/41 ,  H01L21/306 ,  H01L21/335 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L21/302

CPC分类号： H01L29/66462 ,  H01L21/30612 ,  H01L29/7783

摘要： A first semiconductor layer and a second semiconductor layer are laminated on a semiconductor wafer in that order. A resist pattern having an opening is formed on the second semiconductor layer. The second semiconductor layer is etched through the opening in the formed resist pattern to expose the first semiconductor layer. A surface oxide film is formed on the exposed surface of the first semiconductor layer and then selectively etched away. Alternatively, the exposed surface of the first semiconductor layer is subjected to a separate oxidization treatment and the resulting surface oxide film is selectively removed in the subsequent etching.

摘要翻译： 依次层叠在半导体晶片上的第一半导体层和第二半导体层。 具有开口的抗蚀剂图案形成在第二半导体层上。 通过形成的抗蚀图案中的开口蚀刻第二半导体层以暴露第一半导体层。 在第一半导体层的暴露表面上形成表面氧化膜，然后选择性地蚀刻掉。 或者，对第一半导体层的暴露表面进行单独的氧化处理，并在随后的蚀刻中选择性地除去所得的表面氧化膜。

公开(公告)号：US08264595B2

公开(公告)日：2012-09-11

申请号：US12373953

申请日：2007-07-31

申请人： Toshiyuki Sano ,  Kouichi Hoshino

发明人： Toshiyuki Sano ,  Kouichi Hoshino

IPC分类号： H04N5/235 ,  G03B7/00

CPC分类号： H04N5/2353 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/35563 ,  H04N5/35581

摘要： An imaging device comprises: an imaging element (1) capable of reading accumulated charges of different exposure times in a predetermined frame period, the imaging element being divided into groups for long-time exposure and short-time exposure; and a timing pulse generator (2) for adjusting read timings of the imaging element (1). A first read timing at which an accumulated charge of long-time exposure is read from the group for long-time exposure and a second read timing at which an accumulated charge of short-time exposure is read from the group for short-time exposure are adjusted separately from each other. This provides an imaging device that can extend the dynamic range according to the degree of contrast between light and shade of a subject.

摘要翻译： 一种成像装置包括：成像元件（1），其能够在预定帧周期内读取不同曝光时间的累积电荷，所述成像元件被分成用于长时间曝光和短时间曝光的组; 以及用于调整成像元件（1）的读取定时的定时脉冲发生器（2）。 从长时间曝光组中读取长时间曝光的累积电荷的第一读取定时和短时间曝光从组中读取短时间曝光的累积电荷的第二读取定时是 彼此分开调整。 这提供了可以根据被摄体的光和阴影之间的对比度来扩展动态范围的成像装置。

公开(公告)号：US08253816B2

公开(公告)日：2012-08-28

申请号：US12280745

申请日：2007-02-28

申请人： Kouichi Hoshino

发明人： Kouichi Hoshino

IPC分类号： H04N5/228

CPC分类号： H04N5/235 ,  H04N5/2355

摘要： An imaging device (1) includes an all-pixel readout imaging element (2) outputting a LONG signal and a SHORT signal in one field period for each pixel line, a mixing level calculator (7) calculating for each pixel line a mixing level at which the luminance level of the LONG signal is saturated, and an offset calculator (8) calculating for each pixel line an offset that raises the luminance level of the SHORT signal to the mixing level. Level mixing means (9) generates a level mixed signal for each pixel line so as to obtain a LONG signal when the luminance level is lower than the mixing level and obtain a SHORT signal with the offset added when the luminance level is higher than the mixing level. Consequently, an image having a wide dynamic range and a high resolution can be obtained and line-to-line luminance differences in the obtained image can be suppressed.

摘要翻译： 成像装置（1）包括在每个像素线的一个场周期中输出LONG信号和SHORT信号的全像素读出成像元件（2），混合电平计算器（7）为每个像素线计算混合电平 其中LONG信号的亮度级别饱和;以及偏移计算器（8），为每个像素行计算将SHORT信号的亮度级别提高到混合级别的偏移量。 电平混合装置（9）为每个像素线产生电平混合信号，以便当亮度水平低于混合电平时获得LONG信号，并且当亮度水平高于混合时获得附加偏移量的短路信号 水平。 因此，可以获得具有宽的动态范围和高分辨率的图像，并且可以抑制所获得的图像中的线间亮度差异。

公开(公告)号：US20090262215A1

公开(公告)日：2009-10-22

申请号：US12373953

申请日：2007-07-31

申请人： Toshiyuki Sano ,  Kouichi Hoshino

发明人： Toshiyuki Sano ,  Kouichi Hoshino

IPC分类号： H04N5/235

CPC分类号： H04N5/2353 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/35563 ,  H04N5/35581

摘要： An imaging device comprises: an imaging element (1) capable of reading accumulated charges of different exposure times in a predetermined frame period, the imaging element being divided into groups for long-time exposure and short-time exposure; and a timing pulse generator (2) for adjusting read timings of the imaging element (1). A first read timing at which an accumulated charge of long-time exposure is read from the group for long-time exposure and a second read timing at which an accumulated charge of short-time exposure is read from the group for short-time exposure are adjusted separately from each other. This provides an imaging device that can extend the dynamic range according to the degree of contrast between light and shade of a subject.

摘要翻译： 一种成像装置包括：成像元件（1），其能够在预定帧周期内读取不同曝光时间的累积电荷，所述成像元件被分成用于长时间曝光和短时间曝光的组; 以及用于调整成像元件（1）的读取定时的定时脉冲发生器（2）。 从长时间曝光组中读取长时间曝光的累积电荷的第一读取定时和短时间曝光从组中读取短时间曝光的累积电荷的第二读取定时是 彼此分开调整。 这提供了可以根据被摄体的光和阴影之间的对比度来扩展动态范围的成像装置。

公开(公告)号：US5578521A

公开(公告)日：1996-11-26

申请号：US432637

申请日：1995-05-03

申请人： Yasutoshi Suzuki ,  Takamasa Suzuki ,  Kunihiko Hara ,  Hajime Inuzuka ,  Naomi Awano ,  Kouichi Hoshino

发明人： Yasutoshi Suzuki ,  Takamasa Suzuki ,  Kunihiko Hara ,  Hajime Inuzuka ,  Naomi Awano ,  Kouichi Hoshino

IPC分类号： C30B25/02 ,  C30B25/14

CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/42 ,  Y10S438/933 ,  Y10S438/938

摘要： A silicon semiconductor substrate, on which an epitaxial layer is to be formed, is set in a reaction vessel having a heating mechanism, and a gas containing TMG and AsH.sub.3 is introduced into the reaction vessel with the substrate heated to 450.degree. C., thus forming, on the substrate, a low-temperature growth layer of amorphous or polycrystalline GaAs as a semiconductor substance having a different lattice constant from that of the substrate. Then, with the TMG removed from the introduced gas, the temperature of the semiconductor substrate is increased to 750.degree. C., to cause coagulation of atoms of the low-temperature growth layer, with a thermal treatment also being performed at this high temperature, to cause growth of island-like single crystal cores. Further, a high temperature growth process is conducted in a material gas atmosphere containing TMG, whereby a GaAs film is epitaxially grown on the semiconductor substrate surface.

摘要翻译： 将其上形成有外延层的硅半导体衬底设置在具有加热机构的反应容器中，并且将含有TMG和AsH 3的气体引入加热至450℃的衬底的反应容器中，因此 在基板上形成作为具有与基板的晶格常数不同的晶格常数的半导体物质的非晶或多晶GaAs的低温生长层。 然后，从引入气体中除去TMG后，将半导体基板的温度升高至750℃，使低温生长层的原子凝结，同时在该高温下进行热处理， 引起岛状单晶核的生长。 此外，在含有TMG的原料气体气氛中进行高温生长处理，由此在半导体基板表面上外延生长GaAs膜。